Memory cell structure in a magnetic random access memory and a method for fabricating thereof

• US 5,732,016 A
• Filed: 07/02/1996
• Issued: 03/24/1998
• Est. Priority Date: 07/02/1996
• Status: Expired due to Fees

• Current Assignee: Everspin Technologies Incorporated
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Chen, Eugene, Goronkin, Herbert, Tehrani, Saied N.
• Primary Examiner(s): Nelms, David C.
• Assistant Examiner(s): Ho, Hoai V.
• Application Number:
  US08/674,387
• Time in Patent Office: 630 Days
• Field of Search: 365/171, 365/97, 365/158, 360/113
• US Class Current: 365/158
• CPC Class Codes: G11C 11/14 using thin-film elements
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic random access memory (MRAM) cell structure (10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material (11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.

Claims

1. A memory cell structure in a magnetic random access memory comprising:

a portion of magnetic material; and

a conductor, which has a first leg on one side of the portion, a second leg on another side of the portion and a connecting bight, for applying magnetic field to the portion.

2. The memory cell structure in said magnetic random access memory of claim 1 wherein the magnetic material includes giant magnetoresistive material.

3. The memory cell structure in said magnetic random access memory of claim 1 wherein the conductor further includes a conductor portion wound around the portion of magnetic material.

4. The memory cell structure in said magnetic random access memory of claim 1 wherein the portion of magnetic material further includes a plurality of the portions of magnetic material.

5. The memory cell structure in said magnetic random access memory of claim 4 wherein the plurality of the portions of magnetic material are arranged on the same plane.

6. The memory cell structure in said magnetic random access memory of claim 4 wherein the conductor further includes a conductor portion wound around the portion of magnetic material.

7. The memory cell structure in said magnetic random access memory of claim 6 wherein the plurality of the portions of magnetic material are arranged on the same plane.

8. The memory cell structure in said magnetic random access memory, of claim 1 further including a flux concentrators placed near the conductor on opposite side of portion of magnetic material, for concentrating magnetic flux to the portion of magnetic material.

9. The memory cell structure in said magnetic random access memory of claim 8 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.

10. The memory cell structure in said magnetic random access memory of claim 3 further including flux concentrators, placed near the conductor on opposite side of portion of magnetic material.

11. The memory cell structure in said magnetic random access memory of claim 10 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.

12. The memory cell structure in said magnetic random access memory of claim 7 further including flux concentrators, placed near the conductor on opposite side of portion of magnetic material.

13. The memory cell structure in said magnetic random access memory of claim 12 further including a dielectric layer inserted between the flux concentrator and the portion of magnetic material.

14. A memory cell structure in said magnetic random access memory comprising:

a flux concentrator for concentrating magnetic flux;

a conductor having a first leg on one side of the flux concentrator, a second leg on another side of the flux concentrator and a connecting bight; and

a portion of magnetic material magnetically coupled to the flux concentrator.

15. The memory cell structure in said magnetic random access memory of claim 14 wherein the conductor further includes a conductor portion wound around the flux concentrator.

16. The memory cell structure in said magnetic random access memory of claim 14 wherein the flux concentrator further includes a plurality of the flux concentrator.

17. The memory cell structure in said magnetic random access memory of claim 16 wherein the plurality of the flux concentrators are arranged on the same plane.

18. The memory cell structure in said magnetic random access memory of claim 17 wherein the conductor further includes a conductor portion wound around the flux concentrator.