Resistive component comprising a CRSI resistive film

• US 5,733,669 A
• Filed: 03/07/1996
• Issued: 03/31/1998
• Est. Priority Date: 03/09/1995
• Status: Expired due to Fees

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Thyen, Rudolf, Veyhl, Rainer, Boneβ, Henning
• Primary Examiner(s): Ryan, Patrick
• Assistant Examiner(s): LAM, CATHY FONG FONG
• Application Number:
  US08/612,152
• Time in Patent Office: 754 Days
• Field of Search: 428/427, 428/428, 428/689, 428/698, 428/704, 428/210, 428/699, 428/701, 428/702, 428/469, 428/472, 428/336, 338/308, 338/314
• US Class Current: 428/698
• CPC Class Codes: H01C 7/006 Thin film resistors
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A resistive component which is composed of one or more resistive films which, if necessary, may be provided on a substrate, and at least one of which is on the basis of CrSi, the resistive film on the basis of CrSi comprising 5-50 at. % Cr, 10-70 at. % Si, 5-50 at. % O and at least one element of the group formed by B, C and N in a concentration of 1-50 at. %. The advantageous properties of the resistive component in accordance with the invention are based on the reactive incorporation of oxygen and carbon or oxygen and nitogen or oxygen and carbon and nitrogen into resistive films on the basis of CrSi.

Claims

1. A resistive component comprising one or more resistive films wherein at least one of the resistive films is on the basis of CrSi, further wherein the resistive film on the basis of CrSi comprises 5-50 at. % Cr, 10-70 at. % Si, 5-50 at. % O and at least one compound selected from the group consisting of boride, carbide and nitride in the concentration of 1-50% at. %.

2. The resistive component as claimed in claim 1, wherein the resistive film on the basis of CrSi comprises 20-40 at. % Cr, 10-30 at. % Si, 10-40 at. % O and at least one element selected from the group consisting of boride, carbide and nitride in a concentration of 1-40 at. %.

3. The resistive component as claimed in claim 1, wherein the resistive film on the basis of CrSi comprises 25-35 at. % Cr, 15-25 at. % Si, 20-30 at. % O, and at least one element selected from the group consisting of boride, carbide and nitride in a concentration of 1-30 at. %.

4. The resistive component as claimed in claim 1, wherein the resistive film on the basis of CrSi comprises 10-30 at. % Cr, 20-60 at. % Si, 20-50 at. % O, and at least one element selected from the group consisting of boride, carbide and nitride in a concentration of 1-40 at. %.

5. The resistive component as claimed in claim 1, wherein the resistive film on the basis of CrSi comprises 16-20 at. % Cr, 35-45 at. % Si, 20-30 at. % O and 15-25 at. % C.

6. The resistive component as claimed in claim 1, wherein the resistive film on the basis of CrSi additionally comprises 1-20 at. % hydrogen.

7. The resistive component as claimed in claim 1, wherein the resistive film additionally comprises 1-5 at. % of one of the following selected from the group consisting of Ge, Ni, Co, Fe, Al, W, Mo, Ti, Ru and Cu.

8. The resistive component as claimed in claim 1, the resistive film on the basis of CrSi comprises a thickness in the range from 10 nm to 10 μ

m.

9. The resistive component as claimed in claim 1, further comprising a substrate, wherein the substrate comprises one of the following selected from the group consisting of Al₂ O₃, BN, AlN, Si, SiC, Si₃ N₄ and SiO₂.