Led array fabrication process with improved unformity

• US 5,733,689 A
• Filed: 03/06/1996
• Issued: 03/31/1998
• Est. Priority Date: 10/20/1993
• Status: Expired due to Term

• Current Assignee: OKI Electric Industry Company Limited
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Ogihara, Mitsuhiko, Nakamura, Yukio, Shimizu, Takatoku, Taninaka, Masumi
• Primary Examiner(s): Rosasco, S.
• Application Number:
  US08/611,410
• Time in Patent Office: 755 Days
• Field of Search: 430/5, 430/311, 430/312, 430/313
• US Class Current: 430/5
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars

Abstract

A method of fabricating an LED array includes (a) forming a first insulating film composed of aluminum oxide on a semiconductor substrate of a first conductive type; (b) patterning the first insulating film by photolithography to form a plurality of first windows; (c) diffusing an impurity of a second conductive type through the plurality of first windows into the first insulating film, thereby forming a plurality of diffusion regions of the second conductive type below the plurality of first windows; (d) forming a second insulating film on the first insulating film and the plurality of first windows; (e) patterning the second insulating film by photolithography to remove the second insulating film from the plurality of first windows, using an etchant that does not etch the first insulating film; (f) forming a metal film on the second insulating film and the plurality of first windows; and (g) patterning the metal film by photolithography to form a plurality of electrodes which make electrical contact with respective diffusion regions.

Claims

1. A method of patterning a film for fabricating an LED array, comprising:

a. creating a photomask comprising transparent areas and opaque areas, said transparent areas and opaque areas having rounded corners;

b. coating said film with a photoresist;

c. illuminating said photoresist through said photomask;

d. developing said photoresist so that parts of said photoresist are removed according to whether or not they were illuminated; and

e. patterning said film by wet etching using remaining parts of said photoresist as an etching mask.

2. The method of claim 1, wherein said film is an insulating film.

3. The method of claim 2, wherein said film is an aluminum oxide film.

4. The method of claim 1, wherein said film is a metal film used for forming electrodes.

5. A method of patterning a film for fabricating an LED array, comprising:

a. creating a photomask comprising transparent areas and opaque areas having respective corners, all corners of said transparent areas and opaque areas being formed by line segments that meet at obtuse angles;

b. coating said film with a photoresist;

c. illuminating said photoresist through said photomask;

d. developing said photoresist so that parts of said photoresist are removed according to whether or not they were illuminated; and

e. patterning said film by wet etching using remaining parts of said photoresist as an etching mask.

6. The method of claim 5, wherein said film is an insulating film.

7. The method of claim 6, wherein said film is an aluminum oxide film.

8. The method of claim 5, wherein said film is a metal film used for forming electrodes.

9. A photomask for use in a photolithography step employing wet etching for fabrication of an LED array, comprising:

transparent areas having corners; and

opaque areas having corners,

wherein all corners of said transparent areas and said opaque areas are rounded.

10. A photomask for use in a photolithography step employing wet etching for fabrication of an LED array, comprising:

transparent areas having corners; and

opaque areas having corners,

wherein all corners of said transparent areas and said opaque areas consist of line segments meeting at obtuse angles.