Dry etching method

• US 5,733,820 A
• Filed: 04/24/1996
• Issued: 03/31/1998
• Est. Priority Date: 04/27/1995
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Sugimoto, Kazuo, Morishita, Satoshi, Adachi, Kouichiro
• Primary Examiner(s): Kunemund, Robert
• Assistant Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US08/637,349
• Time in Patent Office: 706 Days
• Field of Search: 156/625.1, 156/626.1, 156/643.1, 156/646.1, 156/345, 216/58, 216/59, 216/60, 216/63, 216/67, 216/68, 216/69, 216/70, 118/723 MR, 438/8, 438/9, 438/710, 438/100, 438/101, 438/117, 438/120, 438/719, 438/726, 438/728
• US Class Current: 438/719
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: H01J 2237/3346 Selectivity
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32678 Electron cyclotron resonance
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching

Abstract

Silicon material layers formed on an oxide underlayer are attached using a plasma including a gas mixture of a halogen and oxygen. Intensities of first emissions from the plasma at a first wavelength and second emissions from the plasma at a second wavelength are measured. A ratio of the first emissions intensity to the second emissions intensity is determined. The selectivity of silicon layers to oxide underlayers is measured for various conditions of the plasma under which the emissions intensity ratio is obtained. A correlation between the emissions intensity ratio and the selectivity is then established for various etching parameters. A plasma condition to obtain a desired selectivity may then be appropriately set using the established correlation.

Claims

1. A dry etching method for etching silicon material layers by using plasma of a gas mixture including oxygen and at least one halogen/halide, the method including the steps of:

measuring intensities of a first emission from the plasma at a first wavelength and a second emission from the plasma at a second wavelength;

obtaining a ratio of the intensity of the first emission to that of the second emission;

measuring selectivity of silicon material layers to an oxide layer formed over a substrate for a condition of the plasma for which the emission intensity ratio is obtained;

obtaining a correlation between the emission intensity ratio and the selectivity; and

setting a plasma condition for a desired selectivity based on a measured emission intensity ratio by using the correlation.

2. A dry etching method according to claim 1, wherein in the step of measuring intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively.

3. A dry etching method according to claim 1, wherein the gas mixture includes at least one of bromine and chlorine as the halogen.

4. A dry etching method according to claim 3, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from bromine radicals at a wavelength of 780 nm are measured.

5. A dry etching method according to claim 3, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from chlorine radicals at a wavelength of 808 nm are measured.

6. A dry etching method according to claim 1, wherein in the step of measuring intensities, emissions from transitions between excited quintet states of oxygen radicals and emissions from transitions between excited triplet states of oxygen radicals are measured as the first and second emissions, respectively.

7. A dry etching method according to claim 1,

wherein the plasma is generated by electron cyclotron resonance using microwaves in a magnetic field, and

wherein the step of measuring selectivity is performed for a plurality of plasma conditions which are obtained by varying at least one of process parameters of input power of the microwaves, values of electric currents of solenoid coils for generating the magnetic field, and gas pressure of electric discharge.

8. A dry etching method according to claim 1, wherein the silicon material layers are formed on oxide underlayers, and the selectivity of silicon material layers to the oxide underlayers is measured.

11. A dry etching method according to claim 8, wherein the gas mixture includes at least one of bromine and chlorine as the halogen.

12. A dry etching method according to claim 11, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from bromine radicals at a wavelength of 780 nm are measured.

13. A dry etching method according to claim 11, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from chlorine radicals at a wavelength of 808 nm are measured.

21. A dry etching method according to claim 8, wherein the ratio of the intensity also has correlation with a selectivity of the silicon material layers to the organic resist masks.

9. A dry etching method for etching silicon material layers formed on oxide underlayers by using organic resist masks in a plasma of a gas mixture including oxygen and at least one halogen/halide, the method including the steps of:

measuring intensities of a first emission from the plasma at a first wavelength and a second emission from the plasma at a second wavelength;

obtaining a ratio of the intensity of the first emission to that of the second emission,

measuring selectivity of silicon material layers to an oxide layer formed over a substrate for a condition of the plasma for which the emission intensity ratio is obtained;

obtaining a correlation between the emission intensity ratio and the selectivity; and

controlling a condition of the plasma based on the emission intensity ratio.

10. A dry etching method according to claim 9, wherein in the step of measuring intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively.

14. A dry etching method according to claim 9, wherein in the step of measuring intensities, emissions from transitions between excited quintet states of oxygen radicals and emissions from transitions between excited triplet states of oxygen radicals are measured as the first and second emissions, respectively.

15. A dry etching method according to claim 14, wherein in the step of measuring intensities, emissions at a wavelength of 777 nm from transitions between the excited quintet states of oxygen radicals and emissions at a wavelength of 844 nm from transitions between the excited triplet states of oxygen radicals are measured.

16. A dry etching method according to claim 9, wherein in the step of measuring intensities, emissions from oxygen ions and emissions from transitions between excited triplet states of oxygen radicals are measured as the first and second emissions, respectively.

17. A dry etching method according to claim 16, wherein in the step of measuring intensities, emissions at a wavelength of 588 nm from oxygen ions and emissions at a wavelength of 844 nm from transitions between excited triplet states of oxygen radicals are measured.

18. A dry etching method according to claim 9, wherein the step of measuring intensities includes the steps of:

condensing emissions from the plasma;

separating first and second light from the condensed emissions according to the first and second wavelengths; and

measuring respective intensities of the first and second light.

19. A dry etching method according to claim 9,

wherein the plasma is generated by electron cyclotron resonance using microwaves in a magnetic field, and

wherein the step of controlling a condition of the plasma is performed by using at least one of process parameters of input power of the microwaves, values of electric currents of solenoid coils for generating the magnetic field, and gas pressure of electric discharge.

20. A dry etching method according to claim 19, wherein in the step of controlling a condition of the plasma, the at least one of process parameters is adjusted so as to increase the emission intensity ratio.

22. A dry etching method for etching silicon material layers by using a gas mixture including halogen/halide gas and oxygen gas, the method including the steps of:

generating a magnetic field and introducing microwaves for producing plasma of the gas mixture;

wherein

the oxygen gas is introduced into a first region of the magnetic field

while the halogen/halide gas is introduced into a second region of the magnetic field which is different from the first region;

the oxygen gas is excited into a first plasma in the first region having an plasma density higher than that of a second plasma of the second region wherein the halogen/halide gas excited into a second plasma.

23. A dry etching method according to claim 22, wherein in the step of generating a magnetic field, the magnetic field is generated so that a resonance region having an intensity of electron cyclotron resonance is formed between the first and second regions, the first region having an intensity stronger than that of the resonance region, and the second region having an intensity weaker than that of the resonance region.

24. A dry etching method according to claim 22, wherein one of monocrystalline silicon, amorphous silicon, polycrystalline silicon which is doped with impurity, and polycrystalline silicon without impurity is used as the silicon material.

25. A dry etching method according to claim 22, wherein the halogen/halide gas includes at least one of hydrogen bromide and chlorine.

26. A dry etching method according to claim 22, wherein the oxygen gas is selectively excited to a higher excitation state with respect to the halogen/halide gas.

27. A dry etching method according to claim 22, further including a step of increasing a relative density of oxygen radicals to halogen radicals.

28. A dry etching method according to claim 22, further including a step of transporting the first plasma to the second region, thereby increasing density of oxygen radicals to halogen radicals in the second region.

29. A dry etching method for etching silicon material layers in a reaction chamber by using a gas mixture including halogen/halide gas and oxygen gas, the method including the steps of:

exciting the oxygen gas in a first region to produce a first plasma;

introducing the halogen/halide gas into a second region and exciting the halogen/halide gas to generate a second plasma, wherein the first region has a plasma density higher than the second region; and

mixing the first plasma into the second plasma;

thereby increasing plasma density of oxygen radicals to halogen/radicals in the reaction chamber.

30. A dry etching method according to claim 29, further including the steps of generating a magnetic field and introducing microwaves in the reaction chamber.

31. A dry etching method according to claim 29, wherein one of monocrystalline silicon, amorphous silicon, polycrystalline silicon which is doped with impurity, and polycrystalline silicon without impurity is used as the silicon material.

32. A dry etching method according to claim 29, wherein the halogen/halide gas includes at least one of hydrogen bromide and chlorine.