Biocompatible prosthesis

• US 5,735,896 A
• Filed: 04/06/1995
• Issued: 04/07/1998
• Est. Priority Date: 08/15/1994
• Status: Expired due to Term

• Current Assignee: Biotronik Incorporated (Biotronik SE & Company KG)
• Original Assignee: Biotronik Incorporated (Biotronik SE & Company KG)
• Inventors: Amon, Michael, Bolz, Armin
• Primary Examiner(s): BRITTINGHAM, DEBRA
• Application Number:
  US08/417,966
• Time in Patent Office: 1,097 Days
• Field of Search: 623/1, 623/2, 623/11, 623/12, 623/16, 623/18
• US Class Current: 424/423
• CPC Class Codes: A61F 2/0077 Special surfaces of prostheses, e.g. for improving ingrowth A61F2/30767 takes precedence
• CPC Class Codes: A61F 2/82 Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents stent-grafts for tubular structures of the body other than blood vessels A61F2/04; stent-grafts for blood vessels A61F2/07; instruments specially adapted for placement or removal of stents or stent-grafts A61F2/95; for closing wounds, or holding wounds closed A61B17/04 - A61B17/115; dilators A61M29/00
• CPC Class Codes: A61F 2240/001 Designing or manufacturing processes
• CPC Class Codes: A61F 2310/00742 Coating made of silicon carbide
• CPC Class Codes: A61L 27/306 Other specific inorganic materials not covered by A61L27/303 - A61L27/32
• CPC Class Codes: A61L 31/088 Other specific inorganic materials not covered by A61L31/084 or A61L31/086
• CPC Class Codes: A61L 33/027 Other specific inorganic materials not covered by A61L33/022 or A61L33/025
• CPC Class Codes: C23C 16/0245 by etching with a plasma
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/325 Silicon carbide

Abstract

A method of producing a biocompatible prosthesis based on a substrate made essentially of metal or ceramic. The substrate is placed into a reactor chamber of a cathodic vapor deposition arrangement and the chamber is evacuated to a predetermined pressure. A predetermined, negative bias voltage is then applied to the substrate and the substrate is surface treated by adding an etching gas to the reactor chamber, at a predetermined, first flow rate and coupling in a high frequency power with a first, predetermined power density for ionic etching for a first, predetermined period of time. The surface treated substrate is separated from the negative bias voltage and a semiconductor cover layer is chemical vapor-phase deposited on the substrate by adding to the reactor chamber a multi-component mixture of process gases containing a semiconductor element in bound format a second, predetermined flow rate and coupling-in of HF power with a predetermined, second power density, for a second, predetermined time period.

Claims

1. A biocompatible prosthesis, comprising:

a prefabricated substrate comprised of one of a metallic and a ceramic material;

a cover layer including a semiconductor material covering a surface of the substrate; and

a boundary layer having a microstructure including reciprocal bumps and dents formed between the surface of the substrate and the cover layer said bumps and dents interlocking said substrate and said cover layer.

2. The biocompatible prosthesis according to claim 1, further comprising a semiconductor bending agent layer comprised of the same semiconductor material as the cover layer and being disposed between the boundary layer and the cover layer.

3. The biocompatible prosthesis according to claim 1, wherein the boundary layer has an alloy-type chemical structure.

4. The biocompatible prosthesis according to claim 1, wherein the surface of the substrate and the boundary layer are essentially free from oxygen and hydrocarbons.