Electrically floating shield in a plasma reactor

• US 5,736,021 A
• Filed: 07/10/1996
• Issued: 04/07/1998
• Est. Priority Date: 07/10/1996
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ding, Peijun, Xu, Zheng, Fu, Jianming
• Primary Examiner(s): NGUYEN, NAM X
• Application Number:
  US08/677,760
• Time in Patent Office: 636 Days
• Field of Search: 204/298.11, 204/192.12, 204/298.06, 204/298.08, 204/298.14
• US Class Current: 204/298.11
• CPC Class Codes: H01J 37/32504 Means for preventing sputtering of the vessel
• CPC Class Codes: H01J 37/32633 Baffles

Abstract

In a plasma reactor, especially one intended for physical vapor deposition (PVD) onto semiconductor substrates, a shield disposed in front of the chamber walls between the PVD target and the substrates to protect the chamber walls. According to the invention, the shield is left electrically floating so that electrically charged ions and electrons emanating from the plasma or target and impinging upon the shield charge it to the point that the electrical flux is repelled.

Claims

1. A PVD reactor, comprising:

a reactor chamber having at least one generally inwardly concave side wall;

a target having a generally planar surface comprising a target material disposed in said chamber;

a support disposed in said chamber capable of supporting a substrate in opposition to said target along a chamber axis, said at least one side wall of said chamber extending generally between said target and said support;

a DC electrical power source for electrically biasing said target at a negative biasing voltage to create a plasma in said chamber;

an electrically floating shield installed in said chamber and having a portion extending in a direction along said chamber axis between said plasma and said at least one wall to protect said wall from sputter deposition; and

a second shield held at a predetermined potential higher than said negative biasing voltage and installed in said chamber between said electrically floating shield and said support to act as an anode with respect to said target.

2. The reactor of claim 1, wherein said electrically floating shield comprises a metallic member.

3. The reactor of claim 1, wherein said electrically floating shield comprises a ceramic member having a metallic coating.

4. The reactor of claim 1, wherein said electrically floating shield constitutes at least a part of a shield system protecting all of said at least one side wall.

5. The reactor of claim 1, wherein said predetermined potential is ground.

6. The reactor of claim 1, wherein both said electrically floating and said second shields have portions extending along said chamber axis.

7. The reactor of claim 6, wherein said second shield has a top portion and said electrically floating shield has a bottom portion overlapping said top portion of said second shield, said top and bottom portions being separated by a gap in a direction perpendicular to said chamber axis.

8. The reactor of claim 7, wherein said bottom portion of said electrically floating shield is inward of said top portion of said second shield.

9. The reactor of claim 8, further comprising an insulating member interposed between said electrically floating and said second shields that is shielded from said plasma by said bottom portion of said electrically floating shield.

10. The reactor of claim 1, wherein said second shield is supported on and electrically connected to said chamber and further comprising an insulating member resting on said second shield and supporting said electrically floating shield.

11. The reactor of claim 10, wherein said electrically floating shield includes a lip portion radially inward of said insulating member.

12. A PVD reactor, comprising:

a chamber wall;

a first electrically insulating member disposed on said wall;

a target assembly disposed on said first insulating member and including a substantially planar target facing downwardly toward a substrate holder;

a first shield member having a rim portion disposed on a radially inwardly extending ledge of said chamber wall and a skirt portion extending downwardly from said target;

a second electrically insulating member disposed on said first shield member; and

a second shield member disposed on said second insulating member and extending downwardly from a point above a bottom portion of said target and spaced from said target and said chamber wall.

13. The PVD reactor of claim 12, wherein said second shield member comprises a metal.

14. The PVD reactor of claim 13, wherein said second shield member is electrically floating.

15. The reactor of claim 13, wherein said second shield member overlaps a radially inward portion of said first shield member so as to shield said second insulating member from particles sputtered from said target.

16. The reactor of claim 13, wherein said second shield member is interposed between said target and said first insulating member.

17. The reactor of claim 13, wherein said first shield member rests on and is electrically connected to said chamber wall.

18. A PVD reactor, comprising:

a metal chamber wall having an inwardly extending ledge;

a first shield member having a rim portion resting on said ledge and a skirt portion extending in a first direction substantially parallel to said chamber wall;

a first electrically insulating member resting on said first shield member;

a sputtering target assembly including a sputtering target;

a second electrically insulating member supporting said target assembly on said chamber wall; and

a second shield member resting on said first insulating member, separated from said chamber wall, and interposed between said target and said second electrically insulating member.

19. The PVD reactor of claim 18, wherein said second shield member has a lip extending in said first direction radially inwardly of all of said first insulating member.

20. The PVD reactor of claim 18, wherein said second shield member is electrically floating.