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Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer

  • US 5,736,439 A
  • Filed: 06/20/1996
  • Issued: 04/07/1998
  • Est. Priority Date: 03/27/1991
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device comprising the steps of:

  • depositing an insulating film on a substrate;

    depositing a semiconductor film on said insulating film;

    first heating said insulating film and said semiconductor film at a first temperature to crystallize said semiconductor film; and

    second heating said insulating film and said semiconductor film at a second temperature which is higher than said first temperature whereby said insulating film contracts,wherein said insulating film is deposited at a temperature not higher than room temperature.

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