Method for forming a semiconductor device in which the insulating layer is heated to contract after crystallization of the semiconductor layer

• US 5,736,439 A
• Filed: 06/20/1996
• Issued: 04/07/1998
• Est. Priority Date: 03/27/1991
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takemura, Yasuhiko, Yamazaki, Shunpei
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/666,930
• Time in Patent Office: 656 Days
• Field of Search: 437/21, 437/40 TFT, 437/41 TFT, 437/173, 437/174, 437/101
• US Class Current: 438/166
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0922 Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
• CPC Class Codes: H01L 27/1281 by using structural features to control crystal growth, e.g. placement of grain filters
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: Y10S 438/967 Semiconductor on specified insulator

Abstract

A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

first heating said insulating film and said semiconductor film at a first temperature to crystallize said semiconductor film; and

second heating said insulating film and said semiconductor film at a second temperature which is higher than said first temperature whereby said insulating film contracts,

wherein said insulating film is deposited at a temperature not higher than room temperature.

4. The method of claim 1, 2 or 3 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass, quartz glass.

5. The method of claim 1, 2 or 3 wherein said insulating film as deposited on said substrate contains hydrogen.

6. The method of claim 1, 2, or 3 wherein said insulating film is not thinner than 50 nm thick.

7. The method of claim 1, 2 or 3 wherein said semiconductor film is amorphous.

8. The method of claim 1, 2 or 3 wherein said semiconductor film is polycrystal.

2. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

heating said insulating film and said semiconductor film at a first temperature in order to crystallize said semiconductor film; and

heating said insulating film and said semiconductor film at a second temperature higher than said first temperature so that said insulating film contracts;

forming a gate insulating film on said semiconductor film; and

forming a gate electrode on said gate insulating film.

9. The method of claim 2 or 3 wherein said insulating film is deposited at a temperature not higher than room temperature.

3. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

heating said insulating film and said semiconductor film at a temperature in the range from 500°

to 700°

C. to crystallize said semiconductor film; and

then

heating said insulating film and said semiconductor film at a temperature in the range from 700°

to 1000°

C. so that said insulating film contracts; and

forming a gate electrode over said semiconductor film with a gate insulating film therebetween.

10. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

crystallizing said semiconductor film

heating said insulating film and said semiconductor film after the crystallization step whereby said insulating film contracts;

forming a gate insulating film on said semiconductor film; and

forming a gate electrode on said gate insulating film.

13. The method of claim 10, 11 or 12 wherein said insulating film comprises a material selected from the group consisting of phosphosilicate glass, borosilicate glass, phosphoborosilicate glass, quartz glass.

14. The method of claim 10, 11 or 12 wherein said insulating film as deposited on said substrate contains hydrogen.

15. The method of claim 10, 11, or 12 wherein said insulating film is not thinner than 50 nm thick.

16. The method of claim 10, 11 or 12 wherein said semiconductor film is amorphous.

17. The method of claim 10, 11 or 12 wherein said semiconductor film is polycrystal.

18. The method of claim 10, 11 or 12 wherein said insulating film is deposited at a temperature not higher than room temperature.

11. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

heating said insulating film and said semiconductor film at a first temperature in order to crystallize said semiconductor film and subsequently at a second temperature higher than said first temperature so that said insulating film contracts;

forming a gate insulating film on said semiconductor film; and

forming a gate electrode on said gate insulating film.

12. A method of manufacturing a semiconductor device comprising the steps of:

depositing an insulating film on a substrate;

depositing a semiconductor film on said insulating film;

heating said insulating film and said semiconductor film at a temperature in the range from 500°

to 700°

C. to crystallize said semiconductor film and subsequently at a temperature in the range from 700°

to 1000°

C. so that said insulating film contracts;

forming a gate insulating film on said semiconductor film; and

forming a gate electrode on said gate insulating film.