×

Transistor package structured to provide heat dissipation enabling use of silicon carbide transistors and other high power semiconductor devices

  • US 5,736,787 A
  • Filed: 07/11/1996
  • Issued: 04/07/1998
  • Est. Priority Date: 07/11/1996
  • Status: Expired due to Fees
First Claim
Patent Images

1. A package for relatively high power heat generating semiconductor devices, comprising:

  • a heat conductive metal flange having a bottom side providing a ground plane contact interface having a heat transfer area for ground plane dissipation of device generated heat;

    a dielectric substrate having a metallic upper surface;

    a bottom surface of the said substrate bonded to a top surface of said metal flange;

    at least one heat generating semiconductor device located on the metallic upper surface of said substrate and generating heat over an active device surface area to be dissipated to said substrate;

    input and output circuit means coupled to said semiconductor device; and

    a set of ground plane mounting holes provided in said metal flange and surrounding said at least one semiconductor device, the number of said mounting holes and the ratio of the flange heat transfer area to the device active area being such that the resulting interface contact pressure caused by ground plane securing elements and the resulting interface temperature drop enable sufficient heat dissipation for the semiconductor devices to be silicon carbide transistors or other semiconductor devices substantially equivalent to such transistors in heat generation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×