Method and apparatus for performing magnetic field measurements using magneto-optic Kerr effect sensors

• US 5,736,856 A
• Filed: 11/06/1996
• Issued: 04/07/1998
• Est. Priority Date: 03/05/1993
• Status: Expired due to Fees

• Current Assignee: Northeastern University
• Original Assignee: Northeastern University
• Inventors: Oliver, Steven A., DiMarzio, Charles A.
• Primary Examiner(s): Snow, Walter E.
• Application Number:
  US08/744,923
• Time in Patent Office: 517 Days
• Field of Search: 324/244.1, 324/175, 324/207.25, 324/207.13, 324/96, 324/97, 324/117 R, 324/117 H, 324/364, 324/260, 356/33, 356/34, 356/365, 356/368, 250/225, 359/280-283
• US Class Current: 324/244.1
• CPC Class Codes: G01B 11/18 using photoelastic elements
• CPC Class Codes: G01D 5/344 using polarisation G01D5/35303 takes precedence
• CPC Class Codes: G01R 33/0325 using the Kerr effect

Abstract

A sensor system includes a magneto-optic Kerr effect magnetic field sensing element and an optical system including a light source, at least one polarizer or polarizing element and a detector disposed about the sensing element. The sensing element is responsive to an external magnetic field. In one embodiment, the optical system and sensing element can be arranged to measure the strength of a magnetic field. In another embodiment the optical system and sensing element can be arranged to measure the rotational speed of rotating members.

Claims

1. A magneto-optic Kerr effect magnetic field sensor comprising:

a light source;

a magneto-optic Kerr effect magnetic field sensing element, said sensing element comprising a plurality of thin-film layers disposed on a substrate, at least one of said layers being of a reflective magnetic material and having;

an in-plane magnetization orientation;

a well-defined in-plane uniaxial anisotropy; and

known magneto-optic Kerr effect and in-plane uniaxial anisotropy field values, wherein said sensing element is disposed such that an in-plane hard axis of said at least one layer of reflective magnetic material lies in a light plane of incidence and collinear to an external magnetic field to be measured, wherein said at least one reflective magnetic material layer has at least one domain having a rotatable magnetization vector that rotates in response to said external magnetic field, and said at least one layer of reflective magnetic material is disposed such that a polarization characteristic of incident light is altered upon reflectance from said sensing element;

a first polarizing element disposed between said light source and said magneto-optic Kerr effect magnetic field sensing element wherein said light source directs a light beam to said first polarizing element and said first polarizing element transmits a first polarized light beam having a first predetermined polarization characteristic to said magneto-optic Kerr effect magnetic field sensing element;

a second polarizing element disposed to intercept light reflected from said magneto-optic Kerr effect magnetic field sensing element and to transmit a second polarized light beam having a second predetermined polarization characteristic; and

a detector disposed to intercept said second polarized light beam from said second polarizing element.

2. The sensor of claim 1 wherein the light source is selected from the group consisting of:

a laser light source; and

a light emitting diode (LED).

3. The sensor of claim 1 wherein:

said first polarizing element provides maximum transmission of a first polarization vector of said light source light beam and a relatively small, predetermined transmission of a second, orthogonal, polarization vector of said light source light beam, said second polarization vector being an information-independent second polarization vector component; and

said second polarizing element provides maximum transmission of said second polarization vector of said light and minimal transmission of said first polarization vector of said light reflected from said sensing element.

4. The sensor of claim 3 wherein said first polarization vector is s-polarized light, and said second polarization vector is p-polarized light, the light polarizations being defined with respect to said sensing element.

5. The sensor of claim 3 wherein said first polarization vector is p-polarized light, and said second polarization vector is s-polarized light, the light polarizations being defined with respect to said sensing element.

6. The sensor of claim 1 wherein an in-plane magnetization vector component measured along said hard axis of said at least one layer of magnetic material is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

7. The sensor of claim 1 wherein an in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

8. The sensor of claim 3 wherein said at least one sensing element layer of magnetic material is disposed to intercept said first polarized light beam from said first polarizing element, and to reflect light having said altered polarization characteristic by converting a portion of said first polarization vector to said second polarization vector by an amount determined by an in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence, a magnitude of said first polarization vector and said magneto-optic Kerr effect value, as provided by the so-called longitudinal magneto-optic Kerr effect, said altered light being an information-containing component of said second polarization vector of said second polarized light beam.

9. The sensor of claim 8 wherein said information-containing component of said second polarization vector of said second polarized beam has an amplitude that is smaller than an amplitude of said information-independent second polarization vector component of said second polarized light beam.

10. The sensor of claim 1 wherein said detector is selected from the group consisting of:

a semiconductor photodiode; and

a photomultiplier tube.

11. The sensor of claim 3 wherein said detector is disposed to intercept said second polarized light beam transmitted through said second polarizing element, to detect said information-containing and information-independent components of said second polarization vector as electrical currents, to mix said electrical currents, and to provide as an output of said detector a summation current.

12. The sensor of claim 11 wherein said detector output is comprised of the sum of:

an information-containing electrical current, which is linearly proportional to the ratio of said external magnetic field value to said in-plane uniaxial anisotropy field value of said at least one layer of magnetic material; and

an information-independent electrical current, which is larger in magnitude than said information-containing electrical current but which remains constant with respect to the value of said external magnetic field.

13. The sensor of claim 11 wherein said magneto-optic Kerr effect sensing element is disposed on a glass block.

14. The sensor of claim 1 wherein said magneto-optic Kerr effect sensing element is disposed on a fiber optic coupler half block.

15. The sensor of claim 1 further comprising polarization-maintaining fiber optic cable coupled between each optical element of said magnetic field sensor for transmitting light between said optical elements.

16. The sensor of claim 15 wherein said first and second polarizing elements are provided as polarizing fiber optic cable.

17. The sensor of claim 11 wherein said reflective layer of magnetic material is provided as a thin metallic ferromagnetic film.

18. The sensor of claim 17 wherein said thin metallic ferromagnetic film is provided as an amorphous ferromagnetic alloy.

19. The sensor of claim 17 wherein said thin metallic ferromagnetic film is provided as an array of ellipsoidal thin film elements disposed upon said substrate.

20. The sensor of claim 1 further comprising a flux concentrator element disposed about said magneto-optic Kerr effect magnetic field sensing element.

21. The sensor of claim 20 wherein said flux concentrator element is provided as a ferromagnetic thin film.

22. The sensor of claim 20 wherein said flux concentrator ms disposed on said substrate adjacent said sensing element.

23. A magneto-optic Kerr effect magnetic field sensing system comprising:

a light source;

a polarizing beamsplitter disposed to receive a light beam from said light source and to transmit a light beam having a predetermined polarization characteristic;

a magneto-optic Kerr effect magnetic field sensing element, said sensing element disposed to receive said light beam having said predetermined polarization characteristic from said polarizing beamsplitter, said sensing element comprising a plurality of thin film layers disposed on a substrate, at least one layer of which being a layer of reflective magnetic material and having;

an in-plane magnetization orientation;

a well-defined in-plane uniaxial anisotropy; and

known magneto-optic Kerr effect and in-plane uniaxial anisotropy field values, wherein said sensing element is disposed such that an in-plane hard axis of said at least one layer of reflective magnetic material lies in a light plane of incidence and collinear to an external magnetic field to be measured, wherein said at least one reflective magnetic material layer has at least one domain having a rotatable magnetization vector that rotates in response to said external magnetic field, and said at least one layer of reflective magnetic material is disposed such that said predetermined polarization characteristic of said light beam from said polarizing beamsplitter is altered upon reflectance from said sensing element;

a highly reflective element disposed to intercept light reflected from said sensing element and reflect light back to said sensing element, wherein said reflected light is then reflected towards said beamsplitter;

a detector disposed to intercept light that reflects from said beamsplitter after being reflected from said sensing element.

24. The sensing system of claim 23 wherein the light source is selected from the group consisting of:

a laser light source; and

a light emitting diode (LED).

25. The sensing system of claim 23 wherein:

said polarizing beamsplitter provides maximum transmission of a first polarization vector of said incident light and a relatively small, predetermined transmission of a second, orthogonal polarization vector of said incident light, said small transmitted second polarization vector being an information-independent second polarization vector component; and

said polarizing beamsplitter reflects the remainder of said second polarization vector of said light and provides minimum reflection of said first polarization vector of said incident light.

26. The sensing system of claim 25 wherein said first polarization vector is s-polarized light, and said second polarization vector is p-polarized light, the light polarizations being defined with respect to said sensing element.

27. The sensing system of claim 25 wherein said first polarization vector is p-polarized light, and said second polarization vector is s-polarized light, the light polarizations being defined with respect to said sensing element.

28. The sensing system of claim 23 wherein an in-plane magnetization vector component measured along said hard axis of said at least one layer of magnetic material is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

29. The sensing system of claim 23 wherein an in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

30. The sensing system of claim 25 wherein said at least one sensing element layer of magnetic material is disposed to intercept said light beam having said predetermined polarization characteristic-provided by transmission through said polarizing beamsplitter, and to reflect light having said altered polarization by converting a portion of said first polarization vector to said second polarization vector by an amount determined by said in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence, a magnitude of said first polarization vector and said magneto-optic Kerr effect value, as provided by the so-called longitudinal magneto-optic Kerr effect, said altered light being an information-containing component of said second polarization vector.

31. The sensing system of claim 30 wherein said information-containing component of said second polarization vector has an amplitude smaller than an amplitude of said information-independent second polarization vector component.

32. The sensing system of claim 23 wherein said detector is selected from the group consisting of:

a semiconductor photodiode; and

a photomultiplier tube.

33. The sensing system of claim 30 wherein said polarizing beamsplitter is disposed to intercept light reflected off said sensing element from said reflective element, said intercepted light comprising a first polarization vector component, said information-containing second polarization vector component, and said information-independent second polarization vector component, said polarizing beamsplitter reflecting substantially all of said second polarization vector components toward said detector and transmitting substantially all of said first polarization vector component.

34. The sensing system, of claim 33 wherein said detector is disposed to intercept and detect said second polarization vector components reflected from said polarizing beamsplitter as electrical currents, to mix said electrical currents, and to provide a summation current as an output of said detector.

35. The sensing system of claim 34 wherein said detector output is comprised of the sum of:

an information-containing electrical current, which is linearly proportional to the ratio of said external magnetic field value to said in-plane uniaxial anisotropy field value of said at least one layer of magnetic material; and

an information-independent electrical current, which is larger in magnitude than said information-containing electrical current but which remains constant with respect to the value of said external magnetic field.

36. The sensing system of claim 23 wherein said magneto-optic Kerr effect sensing element is disposed on a glass block.

37. The sensing system of claim 23 wherein said magneto-optic Kerr effect sensing element is disposed on a fiber optic coupler half block.

38. The sensing system of claim 23 wherein said highly reflective element is selected from the group consisting of:

a first highly reflective mirror; and

a nonreciprocal optical element disposed to intercept light reflected from said sensing element and to transmit light having altered polarization characteristics towards a second highly reflective mirror, wherein said second highly reflective mirror reflects said light back towards said nonreciprocal optical element where said altered polarization characteristics are further altered before transmitting said light back towards said sensing element.

39. The sensing system of claim 38 wherein said nonreciprocal optical element and said second highly reflective mirror are disposed to provide alterations to said polarization characteristics of said light reflected back towards the sensing element to minimize polarization noise effects along a light propagation path.

40. The sensing system of claim 38 wherein said-nonreciprocal optical element is provided as a Faraday rotator.

41. The sensing system of claim 39 further comprising single-mode fiber optic cable coupled between each optical element of said magnetic field sensing system.

42. The sensing system of claim 23 wherein said reflective layer of magnetic material is provided as a thin metallic ferromagnetic film.

43. The sensing system of claim 42 wherein said thin metallic ferromagnetic film is provided as an amorphous ferromagnetic alloy.

44. The sensing system of claim 42 wherein said thin metallic ferromagnetic film is provided as an array of ellipsoidal thin film elements disposed upon said substrate.

45. The sensing system of claim 23 further comprising a flux concentrator element disposed about said magneto-optic Kerr effect magnetic field sensing element.

46. The sensing system of claim 45 wherein said flux concentrator element is provided as a ferromagnetic thin film.

47. The sensing system of claim 45 wherein said flux concentrator is disposed on said substrate adjacent said sensing element.

48. A magneto-optic Kerr effect magnetic field sensor comprising:

a light source;

a magneto-optic Kerr effect magnetic field sensing element, said sensing element comprising a plurality of thin-film layers disposed on a substrate, at least one of said layers being of a reflective magnetic material and having;

an in-plane magnetization orientation;

a well-defined in-plane uniaxial anisotropy; and

known magneto-optic Kerr effect and in-plane uniaxial anisotropy field values, wherein said sensing element is disposed such that an in-plane hard axis of said at least one layer of reflective magnetic material lies in a light plane of incidence and collinear to an external magnetic field to be measured, wherein said at least one reflective magnetic material layer has at least one domain having a rotatable magnetization vector that rotates in response to said external magnetic field, and said at least one layer of reflective magnetic material is disposed such that a polarization characteristic of incident light is altered upon reflectance from said sensing element;

a first polarizing element disposed between said light source and said magneto-optic Kerr effect magnetic field sensing element wherein said light source directs a light beam to said first polarizing element and said first polarizing element transmits a first polarized light beam having a first predetermined polarization characteristic to said magneto-optic Kerr effect magnetic field sensing element;

a second polarizing element disposed to intercept light reflected from said magneto-optic Kerr effect magnetic field sensing element, to transmit light having a second predetermined polarization characteristic, and to reflect light having a third predetermined polarization characteristic;

a first detector disposed to intercept light having said second predetermined polarization characteristic that is transmitted through said second polarizing element; and

a second detector disposed to intercept light having said third predetermined polarization characteristic that is reflected from said second polarizing element.

49. The sensor of claim 48 wherein the light source is selected from the group consisting of:

a laser light source; and

a light emitting diode (LED).

50. The sensor of claim 48 wherein:

said first polarizing element provides maximum transmission of a first polarization vector of said light source light beam and a relatively small, predetermined transmission of a second, orthogonal, polarization vector of said light source light beam, said second polarization vector being an information-independent second polarization vector component; and

said second polarizing element intercepts light reflected from said magneto-optic Kerr effect sensing element, transmits light having said second predetermined polarization characteristic to said first detector, and reflects light having said third predetermined polarization characteristic to said second detector.

51. The sensor of claim 50 wherein said first polarization vector is s-polarized light, and said second polarization vector is p-polarized light, the light polarizations being defined with respect to said sensing element.

52. The sensor of claim 50 wherein said first polarization vector is p-polarized light, and said second polarization vector is s-polarized light, the light polarizations being defined with respect to said sensing element.

53. The sensor of claim 50 wherein:

said first polarizing element is provided as a polarizer; and

said second polarizing element is provided as a polarization splitter.

54. The sensor of claim 53 wherein said polarization splitter is disposed to transmit light to said first detector having a first predetermined combination of first polarization vector and second polarization vector, and to reflect light having a second predetermined combination of first polarization vector and second polarization vector to said second detector.

55. The sensor of claim 48 wherein an in-plane magnetization vector component measured along said hard axis of said at least one layer of magnetic material is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

56. The sensor of claim 48 wherein an in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence is proportional to a ratio of said external magnetic field to said magnetic material in-plane uniaxial anisotropy field value.

57. The sensor of claim 50 wherein said at least one sensing element layer of magnetic material is disposed to intercept said first polarized light beam from said first polarizing element, and to reflect light having said altered polarization characteristic by converting a portion of said first polarization vector to said second polarization vector by an amount determined by an in-plane magnetization vector component of said at least one layer of magnetic material measured along said light plane of incidence, a magnitude of said first polarization vector and said magneto-optic Kerr effect value, as provided by the so-called longitudinal magneto-optic Kerr effect, said altered light being an information-containing component of said second polarization vector of said second polarized light beam.

58. The sensor of claim 57 wherein said information-containing component of said second polarization vector of said second polarized beam has an amplitude that is smaller than an amplitude of said information-independent second polarization vector component of said second polarized light beam.

59. The sensor of claim 48 wherein said first and second detectors are each selected from the group consisting of:

a semiconductor photodiode; and

a photomultiplier tube.

60. The sensor of claim 50 wherein said magneto-optic Kerr effect sensing element is disposed on a glass block.

61. The sensor of claim 50 wherein said magneto-optic Kerr effect sensing element is disposed on a fiber optic coupler half block.

62. The sensor of claim 50 further comprising polarization-maintaining fiber optic cable coupled between each optical element of said magnetic field sensor for transmitting light between said optical elements.

63. The sensor of claim 62 wherein said first polarizing element is provided as a polarizing fiber optic cable.

64. The sensor of claim 48 wherein said reflective layer of magnetic material is provided as a thin metallic ferromagnetic film.

65. The sensor of claim 64 where said thin metallic ferromagnetic film is provided as an amorphous ferromagnetic alloy.

66. The sensor of claim 64 wherein said thin metallic ferromagnetic film is provided as an array of ellipsoidal thin film elements disposed upon the substrate.

67. The sensor of claim 48 further comprising a flux concentrator element disposed about said magneto-optic Kerr effect magnetic field sensing element.

68. The sensor of claim 67 wherein said flux concentrator element is provided as a ferromagnetic thin film.