Liquid crystal display device having storage capacitors of increased capacitance and fabrication method therefor

• US 5,737,049 A
• Filed: 08/25/1995
• Issued: 04/07/1998
• Est. Priority Date: 05/09/1995
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Electronics, Inc. (LG Corporation)
• Inventors: Shin, Woo Sup, Song, In Duk
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): NGUYEN, TIEP HUU
• Application Number:
  US08/519,250
• Time in Patent Office: 956 Days
• Field of Search: 359/59, 359/60, 359/79, 349/38, 349/39, 349/122, 349/138, 257/72, 257/59
• US Class Current: 349/122
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

A liquid crystal display (LCD) device includes: a plurality of gate lines and a plurality of data lines arranged in the form of a matrix; a plurality of transistors each having a gate, a source and a drain, and each disposed at an intersecting point of the lines; a plurality of pixel electrodes connected to the drain electrodes of the respective transistors; and a plurality of capacitors formed on the pixel electrodes. The capacitor includes a capacitor electrode, a gate insulating layer, a semiconductor layer and a protective insulating layer. The semiconductor layer of the capacitor is composed of the same material as that of a semiconductor region of the transistor. An etch stop layer is used for protecting a gate insulating layer during etching a protective insulating layer situated above the gate insulating layer. For the etch stop layer, an amorphous silicon layer or a metal layer are used. By virtue of using the etch stop layer, the capacitor electrodes can be spaced closer together than in conventional LCD devices, thereby advantageously resulting in increased storage capacitance and improved displayed image quality.

Claims

1. A method for forming a storage capacitor in a liquid crystal display (LCD) device, said device having a pixel electrode situated on a protective layer, comprising the steps of:

first forming a first capacitor electrode upon a substrate;

second forming, in sequence, an insulating layer, an amorphous silicon layer and the protective layer above said first capacitor electrode, said amorphous silicon layer being an etch stop layer;

etching said protective and amorphous silicon layers so as to form etched layers; and

third forming a conductive layer, over said etched layers, as a second capacitor electrode so as to form the storage capacitor and connecting the second capacitor electrode to the pixel electrode.

2. The method of claim 1 wherein the etching step further comprises the step of etching the protective and amorphous silicon layers so as to expose a pre-defined area of the insulating layer situated above the first capacitor electrode.

3. The method of claim 2 wherein the second forming step comprises the step of forming the amorphous silicon layer simultaneously with a formation of an amorphous silicon layer of a thin film transistor in said LCD device.

4. The method of claim 3 further comprising the step of anodizing the first capacitor electrode, so as to form an anodized layer on a surface of the first capacitor electrode, prior to forming the insulating layer.

5. A method for forming a storage capacitor in a liquid crystal display (LCD) device, said device having a pixel electrode situated on a protective layer, comprising the steps of:

forming a first capacitor electrode upon a substrate;

forming, in sequence, an insulating layer, an amorphous silicon layer and the protective layer above said first capacitor electrode;

said amorphous silicon layer being an etch stop layer;

etching said protective layer so as to form an etched layer; and

forming a conductive layer, over said etched layer, as a second capacitor electrode so as to form the storage capacitor and connecting the second capacitor electrode to the pixel electrode.

6. The method of claim 5 wherein the etching step further comprises the step of etching the protective layer so as to expose a pre-defined area of the amorphous silicon layer.

7. The method of claim 6 wherein the second forming step comprises the step of forming the amorphous silicon layer simultaneously with a formation of an amorphous silicon layer of a thin film transistor in said LCD device.

8. The method of claim 7 further comprising the step of anodizing the first capacitor electrode, so as to form an anodized layer on a surface of the first capacitor electrode, prior to forming the insulating layer.

9. A method for forming a storage capacitor in a liquid crystal display (LCD) device, said device having a pixel electrode situated on a protective layer, comprising the steps of:

first forming a first capacitor electrode upon a substrate;

second forming, in sequence, an insulating layer, a first conductive layer as an etch stop layer, and the protective layer above said first capacitor electrode;

etching said protective layer so as to form an etched layer; and

third forming a second conductive layer, over said etched layer and connected to the first conductive layer, as a second capacitor electrode so as to form the storage capacitor and connecting said second capacitor electrode to the pixel electrode.

10. The method of claim 9 wherein the second forming step comprises the step of forming the first conductive layer as a conductive metallic layer simultaneously with a formation of source and drain electrodes of a thin film transistor in said LCD device.

11. The method of claim 10 wherein the etching step further comprises the step of etching the protective layer so as to expose a pre-defined area of the first conductive layer situated on the insulating layer above the first capacitor electrode.

12. The method of claim 11 further comprising the step of anodizing the first capacitor electrode, so as to form an anodized layer on a surface of the first capacitor electrode, prior to forming the insulating layer.

13. A liquid crystal display (LCD) device having a storage capacitor connected to a pixel electrode formed on a protective layer, the storage capacitor having a first electrode situated on a substrate, the capacitor comprising:

an insulating layer, an amorphous silicon layer and the protective layer which are successively formed above said first capacitor electrode, wherein the amorphous silicon layer is an etch stop layer;

the protective and amorphous silicon layers are etched so as to form etched layers; and

a conductive layer is formed, over the etched layers, as a second capacitor electrode of the storage capacitor and connected to the pixel electrode.

14. The LCD device of claim 13 wherein the protective and amorphous silicon layers are both etched so as to expose a pre-defined area of the insulating layer situated above the first capacitor electrode.

15. The LCD device of claim 14 wherein the amorphous silicon layer is formed simultaneously while an amorphous silicon layer of a thin film transistor is being formed in the LCD device.

16. The LCD device of claim 15 wherein an anodized layer is formed on a surface of the first capacitor electrode prior to forming the insulating layer.

17. A liquid crystal display (LCD) device having a storage capacitor connected to a pixel electrode formed on a protective layer, the storage capacitor having a first electrode situated on a substrate, the capacitor comprising:

an insulating layer, an amorphous silicon layer and the protective layer which are successively formed above said first capacitor electrode, wherein the amorphous silicon layer is an etch stop layer;

the protective layer is etched so as to form an etched layer; and

a conductive layer is formed, over the etched layer, as a second capacitor electrode of the storage capacitor and connected to the pixel electrode.

18. The LCD device of claim 17 wherein the protective layer is etched so as to expose a pre-defined area of the amorphous silicon layer.

19. The LCD device of claim 18 wherein the amorphous silicon layer is formed simultaneously while an amorphous silicon layer of a thin film transistor is being formed in the LCD device.

20. The LCD device of claim 19 wherein an anodized layer is formed on a surface of the first capacitor electrode prior to forming the insulating layer.

21. A liquid crystal display (LCD) device having a storage capacitor connected to a pixel electrode formed on a protective layer, the storage capacitor having a first electrode situated on a substrate, the capacitor comprising:

an insulating layer, a first conductive layer as an etch stop layer, and the protective layer successively formed above said first capacitor electrode;

the protective layer being etched so as to form an etched layer; and

a second conductive layer being formed, over the etched layer, as a second capacitor electrode of the storage capacitor and connected to the pixel electrode.

22. The LCD device of claim 21 wherein the first conductive layer is a conductive metallic layer which is simultaneously formed while source and drain electrodes of a thin film transistor in said LCD device are being formed.

23. The LCD device of claim 22 wherein the protective layer is etched so as to expose a pre-defined area of the first conductive layer situated on the insulating layer above the first capacitor electrode.

24. The LCD device of claim 23 wherein an anodized layer is formed on a surface of the first capacitor electrode prior to forming the insulating layer.