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Second implanted matrix for agglomeration control and thermal stability

  • US 5,739,064 A
  • Filed: 11/27/1996
  • Issued: 04/14/1998
  • Est. Priority Date: 11/27/1996
  • Status: Expired due to Term
First Claim
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1. A method for agglomeration control at an interface of a refractory metal silicide layer and a silicon layer, comprising:

  • bombarding a silicon layer over a semiconductor wafer with a first ion source to implant ions as a first diffusion barrier matrix at a predetermined depth within said silicon layer;

    bombarding said silicon layer with a second ion source to implant ions as a second diffusion barrier matrix at the surface of said silicon layer;

    depositing a metallization layer comprising a refractory metal above and on said silicon layer; and

    heat treating said silicon layer and said metallization layer to react said metallization layer with said silicon layer so as to form a refractory metal silicide layer, said refractory metal silicide layer extending to said predetermined depth within said silicon layer so as to interface with said first diffusion barrier matrix.

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