Semiconductor processing methods of forming a conductive gate and line
First Claim
1. A semiconductor processing method of forming a conductive transistor gate over a substrate comprising the steps of:
- forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls which join with the gate dielectric layer and the gate having an interface with the gate dielectric layer;
forming nitride containing spacers over the respective entireties of the gate sidewalls, the spacers joining with the gate dielectric layer; and
after forming the spacers, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer.
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Abstract
A semiconductor processing method of forming a conductive gate or gate line over a substrate includes, a) forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls and an interface with the gate dielectric layer; b) electrically insulating the gate sidewalls; and c) after electrically insulating the gate sidewalls, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer. According to one aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of a first insulating material and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision of first and second insulating materials and subsequent anisotropic etch thereof to insulate the gate sidewalls. According to another aspect of the invention, the step of exposing the substrate to oxidizing conditions is conducted after provision and subsequent anisotropic etch of a first insulating material, followed by provision and subsequent anisotropic etch of a second insulating material.
114 Citations
41 Claims
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1. A semiconductor processing method of forming a conductive transistor gate over a substrate comprising the steps of:
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forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls which join with the gate dielectric layer and the gate having an interface with the gate dielectric layer; forming nitride containing spacers over the respective entireties of the gate sidewalls, the spacers joining with the gate dielectric layer; and after forming the spacers, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor processing method of forming a conductive gate comprising conducting a gate oxidation step after encapsulating the gate with oxidation resistant material,
said encapsulating comprising forming an oxidation resistant material over the gate and anisotropically etching the material to provide sidewall spacers over sidewalls of the gate, and said conducting comprising channeling oxidants through a layer which underlies the gate and sidewall spacers and which is outwardly exposed laterally proximate the sidewall spacers.
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16. A semiconductor processing method of forming a conductive transistor gate over a substrate comprising the steps of:
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forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls; forming non-oxide material over the gate and dielectric layer; anisotropically etching the non-oxide material to form non-oxide spacers over the sidewalls which join with the gate dielectric layer; and after anisotropically etching the non-oxide material to form the spacers, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate and a portion of the substrate beneath the gate. - View Dependent Claims (17, 18, 19)
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20. A semiconductor processing method of forming a conductive transistor gate comprising the steps of:
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forming a conductive gate stack over a gate dielectric layer on a substrate;
the stack comprising polysilicon, an overlying metal, and an electrically conductive reaction barrier layer intermediate the polysilicon and the overlying metal;
the gate having sidewalls and an interface with the gate dielectric layer;forming an oxidation resistant layer over at least the gate stack sidewalls of all of the metal and polysilicon, none of the polysilicon being outwardly exposed; and after forming the oxidation resistant layer, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate laterally adjacent the oxidation resistant layer. - View Dependent Claims (21, 22, 23, 24, 25, 26)
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27. A semiconductor processing method of forming a conductive gate comprising:
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forming a gate over a gate dielectric layer on a substrate, the gate having sidewalls; shielding at least a portion of the gate sidewalls with a nitride containing oxidation resistant material which is disposed directly on the gate dielectric layer; and after the shielding, exposing the substrate to oxidation conditions effective to oxidize at least a portion of the gate sidewalls laterally inwardly of the oxidation resistant material, the shielding channeling oxidants through the gate dielectric layer to the gate sidewalls. - View Dependent Claims (28, 29, 30, 31, 32)
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33. A semiconductor processing method of forming a conductive gate comprising the steps of:
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forming a patterned gate atop a substrate dielectric surface, at least a portion of the gate being conductive; covering a top and sidewalls of the gate with oxidation resistant material, said sidewalls being completely covered with said oxidation resistant material; and after the covering of the sidewalls and with no conductive portion of the gate being exposed, exposing the substrate to oxidation conditions effective to oxidize at least a portion of the gate laterally adjacent the covered sidewalls adjacent the dielectric surface. - View Dependent Claims (34, 35, 36, 37, 38, 39)
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40. A semiconductor processing method of forming a conductive line comprising:
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forming a conductive line atop a substrate dielectric layer; covering a top and sidewalls of the conductive line with at least one nitride material and anisotropically etching said material to provide sidewall spacers which completely cover said sidewalls; and after the covering of the top and sidewalls, oxidizing a portion of the conductive line laterally inwardly of the nitride material.
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41. A semiconductor processing method of forming a conductive transistor gate over a substrate comprising the steps of:
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forming a conductive gate over a gate dielectric layer on a substrate, the gate having sidewalls which join with the gate dielectric layer and the gate further having an interface with the gate dielectric layer; forming a first nitride containing material over the substrate and gate to a thickness ranging from between 50 to 500 Angstroms; anisotropically etching the first nitride containing material to a degree sufficient to leave first sidewall spacers over the respective entireties of the gate sidewalls, the spacers joining with the gate dielectric layer and having respective outwardly exposed sidewall surfaces; forming a second nitride containing material over the substrate and outwardly exposed sidewalls surfaces of the first sidewall spacers; anisotropically etching the second nitride containing material to a degree sufficient to leave second sidewall spacers respectively over the outwardly exposed sidewall surfaces of the first sidewall spacers, the second sidewall spacers completely covering exposed sidewall surfaces of the first sidewall spacers; and after the etching of the second nitride containing material and with no portion of the gate being exposed, exposing the substrate to oxidizing conditions effective to oxidize at least a portion of the gate interface with the gate dielectric layer by channeling oxidants through the gate dielectric layer, said oxidants entering the gate dielectric layer through exposed portions thereof and being channeled underneath both the first and second sidewall spacers.
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Specification