Method of packaging a high voltage device array in a multi-chip module

• US 5,739,582 A
• Filed: 11/24/1995
• Issued: 04/14/1998
• Est. Priority Date: 11/24/1995
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Nguyen, Hung C., Mojarradi, Mohammad, ElHatem, Abdul M.
• Primary Examiner(s): Thomas, Tom
• Assistant Examiner(s): OSTROWSKI, DAVID M
• Application Number:
  US08/562,614
• Time in Patent Office: 872 Days
• Field of Search: 257/676, 257/687, 257/725, 257/701, 257/782, 257/783, 361/813, 361/820
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/5386 Geometry or layout of the interconnection structure
• CPC Class Codes: H01L 25/0655 the devices being arranged next to each other

Abstract

A method in which several high voltage chips may be packaged within a single, typically low voltage plastic package. The high voltage chips are packaged to remain electrically isolated from each other to avoid undesirable side effects such as arcing between the chips but able to share electronic data and communicate with each other electronically through their input and ouput nodes. Due to the unique packaging method, the typically low voltage plastic packaging can be made to withstand operating voltages up to 35 times greater than previously attained by such low voltage plastic packaging.

Claims

1. A high voltage electronic circuit package comprising

A) at least two high voltage electronic circuit chips wherein each chip has a top surface and a bottom surface,

B) the top surface of each high voltage electronic circuit chip being coated with a layer of non-conductive semi-conductor protective coating and the bottom side of each high voltage electronic circuit wafer being coated with a layer of non-conductive film,

C) a lead frame package with a surface for supporting the at least two high voltage electronic circuit chips,

D) non-conductive epoxy disposed between and adhered to the non-conductive film on the bottom surfaces of said at least two high voltage electronic circuit wafers and the surface for supporting the at least two high voltage electronic circuit wafers on said lead frame package.

2. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive epoxy is of a thickness of at least 4 mils.

3. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive film is of a thickness of at least 2 mils.

4. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive semiconductor protective coating is of a thickness of at least 3 mils.

5. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive semiconductor protective coating is of a thickness of at least 3 mils, the non-conductive epoxy is of a thickness of at least 4 mils, and the non-conductive film is of a thickness of at least 2 mils.

6. The high voltage electronic circuit packaging of claim 5 wherein the non-conductive semiconductor protective coating comprises silicon and the non-conductive film comprises polyimide.

7. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive epoxy is of a thickness of between 4 mils and 6 mils.

8. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive film is of a thickness of between 2 mils and 3 mils.

9. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive semiconductor protective coating is of a thickness of between 3 mils and 6 mils.

10. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive semiconductor protective coating is of a thickness of between 3 mils and 6 mils, the non-conductive epoxy is of a thickness of between 4 mils and 6 mils, and the non-conductive film is of a thickness of between 2 mils and 3 mils.

11. The high voltage electronic circuit packaging of claim 10 wherein the non-conductive semiconductor protective coating comprises silicon and the non-conductive film comprises polyimide.

12. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive semiconductor protective coating comprises silicone.

13. The high voltage electronic circuit packaging of claim 1 wherein the non-conductive film comprises polyimide.