Solid state temperature controlled substrate holder

• US 5,740,016 A
• Filed: 03/29/1996
• Issued: 04/14/1998
• Est. Priority Date: 03/29/1996
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Dhindsa, Rajinder
• Primary Examiner(s): Thompson, Gregory D.
• Application Number:
  US08/623,713
• Time in Patent Office: 746 Days
• Field of Search: 34/92, 165/1, 165/11.1, 165/80.1-80.5, 165/185, 118/69, 118/724, 118/728, 361/688, 361/699, 361/704, 361/707-711, 361/719, 361/720, 361/807, 361/809, 437/248
• US Class Current: 361/704
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: C23C 16/463 Cooling of the substrate
• CPC Class Codes: H01L 21/67103 mainly by conduction
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks

Abstract

A substrate resting on a substrate surface is inserted into a processing chamber and processed to produce integrated chips. The substrate may be clamped electrostatically to the substrate support surface during processing. The substrate support surface plays a major role in controlling the temperature of the substrate during processing. The substrate support includes a plurality of thermoelectric modules in heat transfer contact with the substrate support surface and a controlled current supply. By controlling the current supply to each of these modules, the required temperature distribution can be maintained across the substrate support surface to maintain temperature uniformity across the substrate during processing. The thermoelectric modules control the temperature of the substrate support surface in response to controlled currents from the current supply to provide a uniform substrate temperature. The substrate support may be an RF biased electrode, and the substrate may be a semiconductor wafer. The current supply may contain filters matched to the desired RF frequency, and an RF decoupling plate may be provided between the electrode and the plurality of thermoelectric modules to electrically insulate the thermoelectric modules from the electrode. An additional thermal management system such as a heat sink may be in heat transfer contact with the thermoelectric modules, on for example the opposite side as the electrode for efficient and effective substrate temperature control with minimum use of power to the thermoelectric modules. The heat sink pulls heat away from the electrode and supplies heat to the electrode as needed. The heat sink may be water-cooled or air-cooled. Once processed, the substrate is removed from the processing chamber. The steps of inserting, processing, and removing may be repeated for a plurality of substrates.

Claims

1. In a semiconductor processing system for processing a substrate in a a vacuum processing chamber, a temperature controlled substrate support comprising:

a plurality of thermoelectric modules in heat transfer contact with a substrate support surface enclosed in the vacuum processing chamber; and

a current supply interface, connected to said plurality of thermoelectric modules, for applying controlled currents to said thermoelectric modules to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate during semiconductor processing of the substrate within said vacuum processing chamber.

2. The temperature controlled substrate support of claim 1, wherein the support surface comprises an electrostatic chuck.

3. The temperature controlled substrate support of claim 1, wherein the substrate support surface comprises an electrode, and the substrate comprises a wafer.

4. The temperature controlled substrate support of claim 3, wherein the electrode is radio frequency biased and the wafer is a semiconductor wafer.

5. The temperature controlled substrate support of claim 1, further comprising a radio frequency decoupling plate between the substrate support surface and the plurality of thermoelectric modules.

6. The temperature controlled substrate support of claim 1, further comprising a heat sink in heat transfer contact with the plurality of thermoelectric modules.

7. The temperature controlled substrate support of claim 6, wherein the heat sink is water cooled or air cooled.

8. The temperature controlled substrate support of claim 1, wherein the currents applied to said thermoelectric modules have different values.

9. The temperature controlled substrate support of claim 1, wherein the currents applied to said thermoelectric modules have the same value.

10. The temperature controlled substrate support of claim 1, wherein the thermoelectric modules are arranged in concentric circles.

11. The temperature controlled substrate support of claim 1, wherein the thermoelectric modules are arranged in repeating rectangles.

12. A method of processing a substrate in a semiconductor processing system comprising a temperature controlled substrate support and a vacuum processing chamber enclosing a substrate support surface, the method comprising the steps of:

supplying currents to a plurality of thermoelectric modules in heat transfer contact with the substrate support surface to control the temperatures of respective portions of the substrate support surface; and

controlling the currents to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate.

13. The method of claim 12, wherein the support surface comprises an electrostatic chuck.

14. The method of claim 12, wherein the substrate support surface comprises an electrode and the substrate comprises a wafer.

15. The method of claim 14, wherein the electrode is radio frequency biased, and the wafer is a semiconductor wafer.

16. The method of claim 12, wherein said plurality of thermoelectric modules are electrically insulated from the substrate support surface by a radio frequency decoupling plate.

17. The method of claim 12, wherein a heat sink in heat transfer contact with said plurality of thermoelectric modules pulls heat away from and supplies heat to said plurality of thermoelectric modules.

18. The method of claim 17, wherein said heat sink is water-cooled or air-cooled.

19. The method of claim 12, further comprising the steps of:

inserting said substrate into said vacuum processing chamber;

processing said substrate in said vacuum processing chamber; and

removing said substrate from said vacuum processing chamber.

20. The method of claim 12, wherein said steps of inserting, processing, and removing are repeated for a plurality of substrates processed individually in the vacuum processing chamber.

21. The method of claim 12, wherein the currents applied to said thermoelectric modules have different values.

22. The method of claim 12, wherein the currents applied to said thermoelectric modules have the same value.

23. The method of claim 12, wherein the thermoelectric modules are arranged in concentric circles.

24. The method of claim 12, wherein the thermoelectric modules are arranged in repeating rectangles.

25. In a semiconductor processing system for processing a substrate in a processing chamber, a temperature controlled substrate support comprising:

a plurality of thermoelectric modules in heat transfer contact with a substrate support surface comprising an electrostatic chuck enclosed in the processing chamber; and

a current supply interface, connected to said plurality of thermoelectric modules, for applying controlled currents to said thermoelectric modules to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate during semiconductor processing of the substrate within said processing chamber.

26. The temperature controlled substrate support of claim 25, wherein the substrate support surface further comprises an electrode, and the substrate comprises a wafer.

27. The temperature controlled substrate support of claim 26, wherein the electrode is radio frequency biased and the wafer is a semiconductor wafer.

28. The temperature controlled substrate support surface of claim 25, further comprising a radio frequency decoupling plate between the substrate support surface and the plurality of thermoelectric modules.

29. In a semiconductor processing system for processing a substrate comprising a semiconductor wafer in a processing chamber, a temperature controlled substrate support comprising:

a plurality of thermoelectric modules in heat transfer contact with a substrate support surface comprising a radio frequency biased electrode enclosed in the processing chamber; and

a current supply interface, connected to said plurality of thermoelectric modules, for applying controlled currents to said thermoelectric modules to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate during semiconductor processing of the substrate within said processing chamber.

30. The temperature controlled substrate support of claim 29, wherein the substrate support surface further comprises an electrostatic chuck.

31. The temperature controlled substrate support of claim 29, further comprising a radio frequency decoupling plate between the substrate support surface and the plurality of thermoelectric modules.

32. A method of processing a substrate in a semiconductor processing system comprising a temperature controlled substrate support and a processing chamber enclosing a substrate support surface, the method comprising the steps of:

inserting said substrate into said processing chamber;

supplying currents to a plurality of thermoelectric modules in heat transfer contact with the substrate support surface to control the temperatures of respective portions of the substrate support surface;

controlling the currents to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate;

processing said substrate in said processing chamber; and

removing said substrate from said processing chamber.

33. The method of claim 32, wherein the support surface comprises an electrostatic chuck.

34. The method of claim 32, wherein the substrate support surface comprises an electrode and the substrate comprises a wafer, the processing comprising plasma etching or chemical vapor deposition.

35. The method of claim 34, wherein the electrode is radio frequency biased, and the wafer is a semiconductor wafer.

36. The method of claim 32, wherein said plurality of thermoelectric modules are electrically insulated from the substrate support surface by a radio frequency decoupling plate.

37. A method of processing a substrate in a semiconductor processing system comprising a temperature controlled substrate support and a processing chamber enclosing a substrate support surface comprising an electrostatic chuck, the method comprising the steps of:

supplying currents to a plurality of thermoelectric modules in heat transfer contact with the substrate support surface to control the temperatures of respective portions of the substrate support surface; and

controlling the currents to control the temperature of the substrate support surface and to provide a desired temperature distribution across the substrate.

38. The method of claim 37, wherein the substrate support surface further comprises an electrode and the substrate comprises a wafer, the processing comprising plasma etching or chemical vapor deposition.

39. The method of claim 38, wherein the electrode is radio frequency biased, and the wafer is a semiconductor wafer.

40. The method of claim 37, wherein said plurality of thermoelectric modules are electrically insulated from the substrate support surface by a radio frequency decoupling plate.

41. A method of processing a substrate comprising a semiconductor wafer in a semiconductor processing system comprising a temperature controlled substrate support and a processing chamber enclosing a substrate support surface comprising a radio frequency biased electrode, the method comprising the steps of:

supplying currents to a plurality of thermoelectric modules in heat transfer contact with the substrate support surface to control the temperatures of respective portions of the substrate support surface; and

controlling the currents to control the temperature of the substrate support surface and to provide a desired temperature distribution across the semiconductor wafer.

42. The method of claim 41, wherein the support surface further comprises an electrostatic chuck, the method further comprising processing the semiconductor wafer by plasma etching or chemical vapor deposition.

43. The method of claim 41, wherein said plurality of thermoelectric modules are electrically insulated from the substrate support surface by a radio frequency decoupling plate.