Semiconductor laser

• US 5,740,192 A
• Filed: 12/17/1996
• Issued: 04/14/1998
• Est. Priority Date: 12/19/1994
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ohba, Yasuo, Itaya, Kazuhiko, Nishio, Johji, Fujimoto, Hidetoshi, Hatano, Ako
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US08/767,673
• Time in Patent Office: 483 Days
• Field of Search: 372/43, 372/45, 372/46, 257/101, 257/102
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2302/00 Amplification / lasing wavelength
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

Claims

1. A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising:

a substrate;

a lower clad layer formed on or above said substrate and mainly composed of a III-V Group compound semiconductor;

an active layer formed directly on said lower clad layer and mainly composed of a III-V Group compound semiconductor; and

an upper p-type clad layer formed directly on said active layer and mainly composed of a III-V Group compound semiconductor;

said upper p-type clad layer containing Mg, Si and one or more impurities for compensating residual donors.

2. The semiconductor laser according to claim 1, wherein a concentration of said Si in said upper p-type clad layer is 5×

10¹⁸ /cm³ or more.

3. The semiconductor laser according to claim 1, wherein said III-V Group compound semiconductor is represented by the general formula B_x In_y Al_z Ga.sub.(l-x-y-z) N (0≦

x, y, z ≦

1).

4. The semiconductor laser according to claim 3, wherein said impurity for compensating the residual donors is at least one element selected from the group consisting of Zn, C, Cd, Ti, Fe and Ni.

5. The semiconductor laser according to claim 1, wherein said active layer is composed of a multiple quantum well (MQW) structure.

6. The semiconductor laser according to claim 5, wherein said impurity for compensating the residual donors is at least one element selected from the group consisting of Zn, C, Cd, Ti, Fe and Ni.

7. The semiconductor laser according to claim 1, wherein a buffer layer is interposed between said substrate and said lower clad layer, said buffer layer is composed of a compound semiconductor represented by the general formula Ga_x Al_y In_z N (x+y+z=1).

8. The semiconductor laser according to claim 7, wherein said impurity for compensating the residual donors is at least one element selected from the group consisting of Zn, C, Cd, Ti, Fe and Ni.

9. A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising:

a substrate;

a lower clad layer formed on or above said substrate and mainly composed of a III-V Group compound semiconductor;

an active layer formed directly on said lower clad layer and mainly composed of a III-V Group compound semiconductor; and

an upper p-type clad layer formed directly on said active layer and mainly composed of a III-V Group compound semiconductor;

said upper p-type clad layer containing Mg and one or more acceptor impurities for Compensating residual donors.

10. The semiconductor laser according to claim 9, wherein said acceptor impurity for compensating the residual donors is at least one element selected from the group consisting of C, Cd, Ti, Fe and Ni.

11. A III-V Group compound semiconductor light-emitting element having a p-n junction and being capable of emitting light through a recombination of electrons and holes;

a p-type layer containing Mg and C as an acceptor impurity for compensating residual donors, the concentration of said carbon atom being 8×

10¹⁷ /cm³ or more.

12. The semiconductor light-emitting element according to claim 11, wherein said p-type layer further contains at least one impurity selected from the group consisting of Cd, Fe, Ti, As, O, P and Ni.

13. The semiconductor light-emitting element according to claim 11, wherein a contact layer is interposed between said p-type layer and a p-side electrode, said contact layer containing Mg and C therein.

14. The semiconductor light-emitting element according to claim 13, wherein said contact layer further contains Si therein.

15. The semiconductor light-emitting element according to claim 13, wherein said contact layer further contains at least one impurity selected from the group consisting of Cd, Fe, Ti, As, O, P and Ni.

16. A semiconductor laser comprising:

a substrate comprising a p-type compound semiconductor;

a p-type GaN-based semiconductor layer formed on or above said p-type compound semiconductor substrate;

a light-emitting layer formed directly on said p-type GaN-based semiconductor layer and composed of a GaN-based semiconductor; and

an n-type GaN-based semiconductor layer formed directly on said light-emitting layer;

said p-type GaN-based semiconductor layer containing Mg, Si and one or more impurities for compensating residual donors.

17. The semiconductor laser according to claim 16, wherein said impurity for compensating the residual donors is at least one element selected from the group consisting of Zn, C, Cd, Ti, Fe and Ni.

18. The semiconductor laser according to claim 16, wherein said p-type compound semiconductor substrate is a p-type SiC substrate.

19. The semiconductor laser according to claim 18, wherein said p-type SiC substrate contains a first impurity selected from the group consisting of Al and Ga;

a second impurity composed of N; and

a third impurity for compensating the residual donors.

20. The semiconductor laser according to claim 19, wherein said third impurity is an acceptor impurity.

21. The semiconductor laser according to claim 19, wherein said third impurity is at least one kind of element selected from the group consisting of Al, Ga, In, Sc, Y and Ti.

22. The semiconductor laser according to claim 16, which further comprises a p-side electrode formed on a back surface of the substrate composed of said p-type compound semiconductor, and an n-side electrode formed on said n-type GaN-based semiconductor layer.