Sealed semiconductor chip
First Claim
1. A semiconductor chip comprisinga semiconductor substrate, said semiconductor substrate having a first surface;
- a plurality of integrated circuit devices extending from said first surface, said integrated circuit devices being separated by a scribe lane, said scribe lane having a bottom surface and at least one side surface extending from said bottom surface to a top dielectric layer located on at least one of said integrated circuit devices, said first surface of said substrate defining said bottom surface of said scribe lane, each of said integrated circuit devices comprising at least one conductive layer and one dielectric layer, said dielectric layer including at least one bonding pad opening having a side wall extending from said conductive layer to a top surface of said integrated circuit device, said conductive layer defining a bottom surface of said bonding pad opening, said bottom surface of said bonding pad opening comprising a first portion and a second portion; and
a first protective film covering said top surface of said integrated circuit device, said side and bottom surfaces of said scribe lane, said side wall and said first portion of said bottom surface of said bonding pad opening; and
a second protective film covering said second portion of said bottom surface of said bonding pad opening and a portion of said first protective film.
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Accused Products
Abstract
Described is a structure and process for forming a hermetically sealed chip. This hermetically sealed chip will greatly simplify packaging requirements and eventually lead to the realization of a "packageless chip". The hermetic sealing is composed of two parts, an extremely thin passivation layer which is deposited over the entire chip top and side surfaces and a passivation layer which is deposited over the bonding pad surface. Preferably, SiN is deposited as a chip surface passivation layer and Ni is selectively deposited as a metal passivation layer. The extremely thin nitride layer will minimize the stress and the amount of hydrogen in the SiN film and minimize deleterious effects upon device performance caused by stress and hydrogen. The thickness of the metal passivation layer may be the same as that of the dielectric layer so as to give a planar surface or it may be thick enough so as to give a protruding metal passivation bump.
84 Citations
12 Claims
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1. A semiconductor chip comprising
a semiconductor substrate, said semiconductor substrate having a first surface; -
a plurality of integrated circuit devices extending from said first surface, said integrated circuit devices being separated by a scribe lane, said scribe lane having a bottom surface and at least one side surface extending from said bottom surface to a top dielectric layer located on at least one of said integrated circuit devices, said first surface of said substrate defining said bottom surface of said scribe lane, each of said integrated circuit devices comprising at least one conductive layer and one dielectric layer, said dielectric layer including at least one bonding pad opening having a side wall extending from said conductive layer to a top surface of said integrated circuit device, said conductive layer defining a bottom surface of said bonding pad opening, said bottom surface of said bonding pad opening comprising a first portion and a second portion; and a first protective film covering said top surface of said integrated circuit device, said side and bottom surfaces of said scribe lane, said side wall and said first portion of said bottom surface of said bonding pad opening; and a second protective film covering said second portion of said bottom surface of said bonding pad opening and a portion of said first protective film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor chip comprising
a semiconductor substrate, said semiconductor substrate having a first surface; -
a plurality of integrated circuit devices extending from said first surface, said integrated circuit devices being separated by a scribe lane, said scribe lane having a bottom surface and at least one side surface extending from said bottom surface to a top dielectric layer located on at least one of said integrated circuit devices, said first surface of said substrate defining said bottom surface of said scribe lane, each of said integrated circuit devices comprising at least one conductive layer and one dielectric layer, said dielectric layer including at least one bonding pad opening having a side wall extending from said conductive layer to a top surface of said integrated circuit device, said conductive layer defining a bottom surface of said bonding pad opening, each of said bottom and said side surfaces of said bonding pad opening comprising a first portion and a second portion; and a first protective film covering said first portion, said first protective film comprising a moisture resistant material, said first protective film being transparent to ultraviolet light; and a second protective film covering said second portion. - View Dependent Claims (8, 9, 10, 11)
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12. A semiconductor chip comprising:
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a semiconductor substrate, said semiconductor substrate having a first surface; a plurality of integrated circuit devices extending from said first surface, said integrated circuit devices being separated by a scribe lane, said scribe lane having a bottom surface and at least one side surface extending from said bottom surface to a top dielectric layer located on at least one of said integrated circuit devices, said first surface of said substrate defining said bottom surface of said scribe lane, each of said integrated circuit devices comprising at least one conductive layer and a plurality of dielectric layers, said plurality of dielectric layers including at least one bonding pad opening having a side wall extending from said conductive layer to a top surface of said integrated circuit device, said conductive layer defining a bottom surface of said bonding pad opening, said bottom surface of said bonding pad opening comprising a first portion and a second portion; a first protective film disposed between said plurality of dielectric layers and covering said top surface of said integrated circuit device, said side and bottom surfaces of said scribe lane, said side wall and said first portion of said bottom surface of said bonding pad opening; and a second protective film covering said second portion of said bottom surface of said bonding pad opening and a portion of said first protective film.
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Specification