Semiconductor component with plastic sheath and method for producing the same

• US 5,742,098 A
• Filed: 03/15/1996
• Issued: 04/21/1998
• Est. Priority Date: 03/15/1995
• Status: Expired due to Term

• Current Assignee: OSRAM GmbH (Ams-Osram AG)
• Original Assignee: Siemens AG
• Inventors: Brunner, Herbert
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US08/616,319
• Time in Patent Office: 767 Days
• Field of Search: 257/730, 257/781, 257/782, 257/784, 257/99, 257/100, 361/740, 361/726, 361/759, 174/52.6, 174/102 SC
• US Class Current: 257/730
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/3142 Sealing arrangements between parts, e.g. adhesion promotors
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/10156 : at the periphery
• CPC Class Codes: H01L 2924/10157 : at the active surface
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 31/02363 : of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 33/22 : Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy

Abstract

A semiconductor component includes a semiconductor body. At least one contact metallizing covers at least one portion of a surface of the semiconductor body, defining at least one free portion of the surface not covered by the at least one contact metallizing. A plastic sheath adjoins the semiconductor body having the at least one contact metallizing. The at least one free portion of the surface has a roughening forming a microscopic toothing between the semiconductor body and the plastic sheath. A method for producing a semiconductor component includes producing a semiconductor body, contact metallizings on the semiconductor body, and a microscopic tooth structure on a surface of the semiconductor body. The semiconductor body with the contact metallizings and the microscopic tooth structure is mounted on a system substrate. At least one terminal lead is bonded to one of the contact metallizings and to terminal prongs of the system substrate. The semiconductor body, the contact metallizings, the at least one terminal lead, portions of the terminal prongs and at least portions of the system substrate are sheathed with plastic, while penetrating, filling and curing the plastic in the microscopic tooth structure.

Claims

1. A semiconductor component, comprising:

a light-emitting semiconductor body having a surface;

at least one contact metallizing covering at least one portion of said surface of said semiconductor body, defining at least one free portion of said surface of said semiconductor body not covered by said at least one contact metallizing;

a plastic sheath covering said semiconductor body having said at least one contact metallizing; and

said at least one free portion of said surface of said semiconductor body having a roughening forming a microscopic toothing, and said plastic sheath having a complementary microscopic toothing for interlocking with said microscopic toothing of said semiconductor body for reducing light transmission loses between said semiconductor body and said plastic sheath.

2. The semiconductor component according to claim 1, wherein said contact metallizing contains aluminum.

3. The semiconductor component according to claim 1, wherein said contact metallizing is an aluminum-based alloy.

4. A semiconductor component, comprising:

a light-receiving semiconductor body having a surface;

at least one contact metallizing covering at least one portion of said surface of said semiconductor body, defining at least one free portion of said surface of said semiconductor body not covered by said at least one contact metallizing;

a plastic sheath covering said semiconductor body having said at least one contact metallizing; and

said at least one free portion of said surface of said semiconductor body having a roughening forming a microscopic toothing, and said plastic sheath having a complementary microscopic toothing for interlocking with said microscopic toothing of said semiconductor body for reducing light transmission loses between said semiconductor body and said plastic sheath.