Direct adhering polysilicon based strain gage

• US 5,742,222 A
• Filed: 05/26/1995
• Issued: 04/21/1998
• Est. Priority Date: 05/26/1995
• Status: Expired due to Fees

• Current Assignee: AVI Systems Incorporated
• Original Assignee: AVI Systems Incorporated
• Inventors: Young, Thomas M., Irissou, Pierre R.
• Primary Examiner(s): HOANG, TU BA
• Application Number:
  US08/451,670
• Time in Patent Office: 1,061 Days
• Field of Search: 338/2, 338/3, 338/5, 338/6, 338/4, 338/42, 73/776, 73/862.627, 73/706, 73/721, 73/727, 341/22, 341/34, 29/610 SG, 29/454
• US Class Current: 338/2
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: G06F 3/045 using resistive elements, e.g. a single continuous surface or two parallel surfaces put in contact

Abstract

An economical non-metallic strain gage insensitive to ambient temperature variations, and without a diode junction, which is suitable for general use and particularly for use in touch screens, wherein the gage is adapted to be directly adhered to the screen. The gage is metallized with a thin layer of a solderable metal for electrical soldering connection to strain measurement devices and for reliable mechanical support. The gage includes an etched polysilicon material on a substrate base, such as a silicon wafer, wherein the polysilicon is doped with a dopant material such that output measurements are independent of temperature changes.

Claims

1. A semi-conductor strain gage for directly adhering to and for operably connecting with, a system being measured, said strain gage comprising:

an inert substrate having a first surface portion and a second surface portion, the second surface portion being metallized with a thin layer of metal, the second surface portion providing a surface for soft solder attachment of the strain gage to the system;

a thin polysilicon layer deposited on the first surface portion;

a half bridge strain gage pattern etched from the thin polysilicon layer of the first surface portion of the inert substrate.

2. The strain gage of claim 1, wherein the half bridge in the polysilicon layer includes a first and second elements which have a matching resistance with a degree of magnitude less than 1% difference between them.

3. The strain gage of claim 1, wherein said substrate is comprised of silicon.

4. The strain gage of claim 3, wherein said polysilicon layer is doped with sufficient dopant material to maintain a substantially constant resistance level over a temperature range which the gage is subject to, by adherence to said system.

5. The strain gage of claim 4, wherein said dopant material is boron.

6. The strain gage of claim 5 wherein said boron is present in an amount of about 2×

10¹⁵ cm³.

7. The strain gage of claim 1, wherein said metal is selected from the group consisting of titanium, nickel, gold, and platinum.

8. The strain gage of claim 1 wherein a solder material for securing the strain gauge to the system is matched to a material on the system to which the strain gage is adhered, whereby bonding separation caused by expansions and contractions with temperature fluctuations is prevented thereby.

9. The strain gage of claim 8, wherein the material is comprised of steel.

10. The strain gage of claim 9, wherein said solder material is comprised of a gold-tin alloy.

11. The strain gage of claim 3, wherein said gage has a square configuration.

12. A touch screen having at least four electrically interconnected strain gages of claim 1, adherently connected thereto.

13. The strain gage according to claim 1, wherein the thin layer of metal comprises at least two metals.

14. The strain gage according to claim 1, wherein the second surface portion is on an obverse side of the substrate from the first surface portion.

15. The strain gage according to claim 1, wherein the second surface portion is adjacent to the first surface portion.

16. The strain gage of claim 1, wherein said metal is a metal combination selected from two or more elements from the group consisting of titanium, nickel, gold, and platinum.

17. The semi-conductor strain gage of claim 1, wherein the surface for soft solder attachment is relatively large.

18. A semi-conductor strain gage and system to be measured, comprising:

a system to be measured having a metal substrate;

a semi-conductor strain gage directly adhered to the system being measured, said strain gage being positioned on the metal substrate of the system to be measured, the strain gage including;

an inert substrate having a first surface portion and a second surface portion, the second surface portion being metallized with a thin layer of metal, the second surface portion being soft soldered to the metal substrate of the system to be measured;

a thin polysilicon layer deposited on the first surface portion; and

a half bridge strain gage pattern etched from the thin polysilicon layer of the first surface portion of the inert substrate.

19. The strain gage and system of claim 18 further comprising means for minimizing a difference between a temperature coefficient of the strain gage and a temperature coefficient of the substrate.

20. The strain gage and system of claim 18, wherein the metal substrate has a first thickness and the strain gage has a second thickness, the first and second thicknesses being selected to minimize a difference between a temperature coefficient of the strain gage and a temperature coefficient of the substrate.

21. The strain gage and system of claim 18, further comprising means for making the longitudinal and transverse temperature coefficients of the metal substrate equal to each other.