Plasma reactor with enhanced plasma uniformity by gas addition, and method of using same

• US 5,744,049 A
• Filed: 07/18/1994
• Issued: 04/28/1998
• Est. Priority Date: 07/18/1994
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Su, Yuh-Jia, Hills, Graham W.
• Primary Examiner(s): Tung, T.
• Application Number:
  US08/276,750
• Time in Patent Office: 1,380 Days
• Field of Search: 156/345 P, 156/643.1, 156/646.1, 216/67, 216/79
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32642 Focus rings
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
• CPC Class Codes: Y10S 438/941 Loading effect mitigation

Abstract

The invention improves etch uniformity across a silicon wafer surface in an RF plasma etch reactor. In a first aspect of the invention, etch uniformity is enhanced by reducing the etchant species (e.g., Chlorine) ion and radical densities near the wafer edge periphery without a concomitant reduction over the wafer center, by diluting the etchant (Chlorine) with a diluent gas which practically does not etch Silicon (e.g., Hydrogen Bromide) near the wafer edge periphery. In a second aspect of the invention, etch rate uniformity is enhanced by more rapidly disassociating Chlorine molecules over the center of the wafer to increase the local etch rate, without a concomitant hastening of Chlorine dissociation near the wafer periphery, by the introduction of an inert gas over the wafer center. In a third aspect of the invention, etch rate uniformity is enhanced by forcing gas flow from the gas distribution plate downward toward the wafer center to provide a greater concentration of Chlorine ions over the wafer center, by reducing the effective diameter of the chamber between the gas distribution plate and the wafer to approximately the diameter of the wafer. In a fourth aspect of the invention, etch rate uniformity is enhanced by reducing RF power near the wafer edge periphery, by reducing the RF pedestal to a diameter substantially less than that of the wafer.

Claims

1. An RF plasma etch reactor for etching a semiconductor wafer having an edge periphery, said reactor characterized by:

a vacuum chamber including a chamber wall and ceiling;

a pedestal for holding said semiconductor wafer inside said vacuum chamber, said semiconductor wafer having a surface comprising a material characterized by silicon;

a vacuum pump coupled to said chamber for maintaining said chamber at a predetermined operating pressure;

an etchant gas source comprising an etchant gas characterized by a mixture of chlorine gas and hydrogen bromide for providing in a plasma etchant species capable of etching the material characterized by silicon on the surface of said semiconductor wafer;

an etchant source inlet coupled to said etchant gas source;

a gas distribution plate in the interior of said chamber connected to said etchant source inlet to distribute said etchant gas into said vacuum chamber;

an RF power source for coupling RF power into the interior of said vacuum chamber to maintain a plasma therein characterized by said etchant species;

a diluent gas source containing a diluent gas characterized by hydrogen bromide which tends to dilute said etchant species;

a diluent source inlet coupled to said diluent gas source;

a secondary gas inlet near said edge periphery of said semiconductor wafer, said secondary gas inlet being coupled to said diluent source inlet so as to direct said diluent gas near said edge periphery of said semiconductor wafer so as to reduce density of said etchant species near said edge periphery relative to the density of said etchant species near a center portion of said semiconductor wafer.

2. The reactor of claim 1 wherein said secondary gas inlet is characterized by a hoop-shaped gas distribution ring characterized by a hollow annular ring suspended in said chamber over said edge periphery of said wafer and having gas outlet holes therein.

3. The reactor of claim 1 wherein said secondary gas inlet is characterized by a gas distribution annular box ring extending from said ceiling toward said wafer and having a diameter corresponding to a diameter of said edge periphery of said wafer and a surface thereof near said edge periphery of said wafer having gas outlet holes.

4. The reactor of claim 3 wherein said diluent source inlet is characterized by a gas inlet line passing through said ceiling of said chamber and coupled to an interior cavity formed between said gas distribution box ring and said ceiling.

5. The reactor of claim 4 wherein said gas distribution plate is characterized by a vertical ring wall on an interior surface of said ceiling and a plate on a bottom edge of said vertical ring wall, said plate having gas outlet holes therethrough, said etchant source inlet characterized by a gas inlet tube coupled to a cavity formed between said gas distribution plate and said ceiling.

6. The reactor of claim 5 wherein said vertical ring wall is concentric with said annular ring.

7. The reactor of claim 1 wherein said secondary gas inlet is characterized by an array of gas outlet holes in a top surface of said wafer pedestal and arranged in an arcuate path adjacent said edge periphery of said wafer.

8. The reactor of claim 7 wherein said diluent source inlet is characterized by a gas inlet passage through said wafer pedestal coupled to said gas outlet holes in said wafer pedestal.

9. An RF plasma etch reactor for etching a semiconductor wafer having an edge periphery, said reactor characterized by:

a vacuum chamber including a chamber wall and ceiling;

a pedestal for holding said wafer inside said vacuum chamber;

a vacuum pump coupled to said chamber for maintaining said chamber at a predetermined operating pressure;

an etchant source inlet for a gas characterized by an etchant gas for providing in a plasma, species capable of etching a material on a surface of said semiconductor wafer;

a gas distribution plate in the interior of said chamber connected to said etchant source inlet to distribute said etchant gas into a region of said vacuum chamber overlying all of a top surface of said wafer;

an RF power source for coupling RF power into the interior of said vacuum chamber to maintain a plasma therein characterized by ions of said etchant gas;

a dissociating gas source containing a dissociating gas characterized by a species which tends to dissociate said etchant gas into said etchant species;

a dissociating source inlet coupled to said dissociating gas source;

a secondary gas inlet over a center portion of said semiconductor wafer, said secondary gas inlet being coupled to said dissociating source inlet so as to direct said dissociating gas to a region adjacent said center portion of said semiconductor wafer to enhance density of said etchant species near said center portion of said wafer relative to the density of said etchant species near said edge periphery of said wafer.

10. The reactor of claim 9 wherein said secondary gas inlet is characterized by a hoop-shaped gas distribution ring characterized by a hollow annular ring suspended in said chamber over said center portion of said wafer and having gas outlet holes therein.

11. The reactor of claim 9 wherein:

said secondary gas inlet is characterized by a center gas distribution plate extending from said ceiling toward said wafer and having a diameter less than that of said wafer and corresponding to a diameter of said center portion of said wafer, and a surface thereof near said wafer having gas outlet holes; and

said gas distribution plate comprises a gas distribution box ring around said center gas distribution plate and overlying said edge periphery of said wafer.

12. The reactor of claim 11 wherein said dissociating source inlet is characterized by a gas inlet line passing through said ceiling of said chamber and coupled to an interior cavity formed between said center gas distribution plate and said ceiling.

13. The reactor of claim 12 wherein said gas distribution box ring is characterized by an vertical ring wall on an interior surface of said ceiling and a plate on a bottom edge of said vertical ring wall, said plate having gas outlet holes therethrough, said etchant source inlet characterized by a gas inlet tube coupled to a cavity formed between said gas distribution plate and said ceiling.

14. The reactor of claim 13 wherein said gas distribution box ring is concentric with said center gas distribution plate array.

15. The reactor of claim 13 wherein said material etched by said etchant gas is characterized by silicon.

16. The reactor of claim 9 wherein said etchant gas is characterized by a mixture of chlorine gas and hydrogen bromide.

17. The reactor of claim 16 wherein said dissociating gas is characterized by one of:

(a) xenon, and b) argon.

18. In an rf plasma etch reactor for use with an rf power source to etch a substrate, said reactor being capable of being evacuated to a subatmospheric pressure and of being supplied with etchant gas characterized by chlorine, which upon being ionized in a plasma supplies etchant species capable of etching silicon, the combination comprising:

a conductive cathode within the reactor upon which a substrate having a surface characterized by silicon may be supported, said cathode being capable of being coupled to an rf power source to input rf power into the interior of said reactor to sustain a plasma including said etchant species;

an etchant gas source containing said etchant gas characterized by chlorine;

at least one primamry gas inlet spaced from the cathode for releasing into the evacuated reactor said etchant gas;

a diluent gas source containing a diluent gas characterized by hydrogen bromide which tends to dilute the etchant species;

and a secondary gas inlet about the periphery of the cathode and directing said diluent gas from said diluent gas source to a region adjacent the periphery of the cathode and of any overlying substrate so as to reduce the density of said etchant species near said periphery relative to the density of said etchant species adjacent the center of the cathode.

19. In an rf plasma etch reactor for use with an rf power source to etch a substrate, said reactor being capable of being evacuated to a subatmospheric pressure and of being supplied with etchant gas, which upon being ionized in a plasma supplies species capable of etching, the combination comprising:

a conductive cathode within the reactor upon which a substrate within the reactor may be supported, said cathode being capable of being coupled to an rf power source to input rf power into the interior of said reactor to sustain a plasma including ions of etchant gas;

at least one primary gas inlet spaced from the cathode for releasing gases into a region of the evacuated reactor overlying all of a top surface of said cathode or any substrate supported thereon, said gases comprising said etchant gas;

a dissociating gas source containing a dissociating gas which tends to promote dissociation of the etchant gas into etchant species,

and a secondary gas inlet over a center portion of said cathode directing said dissociation gas from said dissociation gas source to a region adjacent said center portion of said cathode and of any overlying substrate to enhance the density of the etchant species adjacent said center portion relative to the density near the periphery.

20. The combination of claim 19 in which said dissociation gas includes at least one of xenon and argon, and said etchant gas is characterized by a mixture of chlorine and hydrogen bromide.

21. A method of etching a semiconductor wafer having an edge periphery with a RF plasma etch reactor, wherein the semiconductor wafer has a surface comprising a material characterized by silicon and the RF plasma etch reactor has a vacuum chamber, a pedestal for holding said wafer inside said vacuum chamber, and an RF poser source, said method comprising the steps of:

introducing an etchant gas characterized by a mixture of chlorine gas and hydrogen bromide for providing in a plasma, etchant species capable of etching the material characterized by silicon on the surface of said semiconductor wafer;

coupling RF poser into the interior of said vacuum chamber to maintain a plasma therein characterized by said etchant species; and

introducing a diluent gas characterized by hydrogen bromide which tends to dilute said etchant species, said diluent gas being directed near said edge periphery of said semiconductor wafer so as to reduce density of said etchant species near said edge periphery relative to the density of said etchant species near a center portion of said semiconductor wafer.

22. A method of etching a semiconductor wafer having an edge periphery with a RF plasma etch reactor having a vacuum chamber, a pedestal for holding said wafer inside said vacuum chamber, and an RF power source, said method comprising the steps of:

introducing a gas characterized by an etchant gas for providing, in a plasma, species capable of etching a material on a surface of said semiconductor wafer, said gas being distributed into a region of said vacuum chamber overlying all of a top surface of said wafer;

coupling RF power into the interior of said vacuum chamber to maintain a plasma therein characterized by ions of said etchant gas; and

introducing a dissociating gas characterized by a species which tends to dissociate said etchant gas into said etchant species, said dissociating gas being directed to a region adjacent said center portion of said semiconductor wafer to enhance density of said etchant species near said center portion of said wafer relative to the density of said etchant species near said edge periphery of said wafer.

23. The method of claim 22 wherein said material etched by said etchant gas is characterized by silicon.

24. The method of claim 23 wherein said etchant gas is characterized by a mixture of chlorine gas and hydrogen bromide.

25. The method of claim 24 wherein said dissociating gas is characterized by one of:

(a) xenon, and (b) argon.