Method of inspecting a pattern formed on a sample for a defect, and an apparatus thereof

• US 5,744,381 A
• Filed: 03/12/1996
• Issued: 04/28/1998
• Est. Priority Date: 03/13/1995
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tojo, Toru, Watanabe, Toshiyuki, Tsuchiya, Hideo, Tabata, Mitsuo
• Primary Examiner(s): DUTTON, BRIAN KEITH
• Application Number:
  US08/614,063
• Time in Patent Office: 777 Days
• Field of Search: 437/8, 356/237, 356/239, 382/144, 430/5, 438/16
• US Class Current: 438/16
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A pattern defect inspection apparatus comprises a light irradiating portion, a light receive element, a light receive element amplifier, a preparation portion for preparing multi-valued design pattern image data, an offset adjusting portion, a gain adjusting portion, and an inspecting portion. The offset adjusting portion adjusts the offset of the light receive element amplifier such that measurement data of a translucent portion of a pattern on a sample surface corresponds to design pattern image data corresponding to the translucent portion, regarding the translucent portion as a non-transparent portion. The gain adjusting portion adjusts the gain of the light receive element amplifier such that measurement data of a transparent portion of the pattern on the sample surface corresponds to design pattern image data corresponding to the transparent portion.

Claims

1. A pattern defect inspection method comprising:

a light irradiating step of irradiating light on a sample on which a pattern is formed;

a light receive step of receiving a pattern image of the sample obtained by light irradiation by the light irradiating step;

an amplify step of amplifying an output from the light receive step;

a prepare step of preparing multi-valued design pattern image data from binary design data corresponding to the pattern image of the sample;

an offset adjust step of adjusting an offset of a light receive element amplifier, such that measurement data of a translucent portion which regards the translucent portion of the pattern formed on a surface of the sample as a non-transparent portion corresponds to design pattern image data corresponding to the translucent portion;

a gain adjust step of adjusting a gain of the light receive element amplifier, such that measurement data of a transparent portion of the pattern formed on the sample surface corresponds to design pattern image data corresponding to the transparent portion; and

an inspect step of inspecting the pattern formed on the sample surface for a defect, by comparing measurement data obtained from an output of the light receive element amplifier with design pattern image data, while the offset and gain being kept adjusted.

2. A pattern defect inspection method according to claim 1, wherein the sample is provided with a pattern consisting of a translucent region of a certain area or more and a transparent region, at least one of said offset adjust step and said gain adjust step including a step of

firstly illuminating the translucent portion, while adjusting the offset of the light receive element amplifier such that the output of the light receive element amplifier obtained when thus illuminating the translucent portion is zero, and

secondly illuminating the transparent portion, while adjusting the gain of the light receive element amplifier such that the output of the light receive element amplifier obtained when thus illuminating the transparent portion is a predetermined value.

3. A pattern defect inspection method according to claim 1, wherein said inspection step including a step of comparing measurement data with design pattern image data, said measurement data obtained by adding a predetermined offset amount to the output of the light receive element amplifier after the gain of the light receive element amplifier is adjusted.

4. A pattern defect inspection method according to claim 1, further comprising a step of comparing reference design pattern data obtained by making a correction to the design pattern image data, with the measurement pattern data, thereby to determine presence or absence of a pattern defect, said correction corresponding at least to a characteristic of a light shielding portion forming material of the pattern formed on the sample.

5. A pattern defect inspection method comprising:

a design pattern data providing step of providing design pattern data used for forming a mask pattern;

a measurement pattern data detecting step of detecting an image of the pattern formed on a sample, thereby to obtain measurement pattern data;

a data adjusting step of adjusting the design pattern data accordance with a characteristic of a light shielding portion of the pattern, thereby to obtain reference design pattern data; and

a data comparing step of comparing the measurement pattern data with reference design pattern data, thereby to determine presence or absence of a defect in the pattern, wherein said data adjusting step includes a step of making an offset which corresponds to a form of the measurement pattern data obtained and corresponding at least to the characteristic of the light shielding portion of the pattern, and which provides a level of data of the light shielding portion of the pattern among the design pattern data.

6. A pattern defect inspection method according to claim 5, wherein said offset is included in a data region having edge portions and wherein said edge portions include at least one of an undershooting portion and an overshooting portion, each of said undershooting portion and overshooting portion having a height and a width corresponding to the obtained form of the measurement pattern data and corresponding at least to the characteristic of the light shielding material.

7. A pattern defect inspection method comprising:

a light irradiating step of irradiating light on a sample on which a pattern is formed;

a light receive step of receiving, through an optical system, a pattern image of the sample obtained by light irradiation by the light irradiating step;

an amplify step of amplifying an output from the light receive step;

an offset adjust step of adjusting an offset and a gain of a light receive element amplifier, in correspondence with a difference in an optical characteristic of the pattern formed on a surface of the sample;

a prepare step of changing a convert function in correspondence with a difference in an optical characteristic of the pattern formed on the surface of the sample, and of preparing multi-valued design pattern image data from binary design data corresponding to the pattern image of the sample, with use of the convert function; and

an inspect step of inspecting the pattern formed on the sample surface for a defect, by comparing measurement data obtained from an output of the light receive element amplifier with design pattern image data.

8. A pattern defect inspection method according to claim 7, wherein the convert function of the prepare step, used for preparing multi-valued design pattern image data from binary design data, includes a function having at least three peaks when the optical characteristic of the pattern formed on the surface of the sample exhibits translucency with respect to irradiated light.

9. A pattern defect inspection method according to claim 7, further comprising a step of comparing reference design pattern data obtained by making a correction to the design pattern image data, with the measurement pattern data, thereby to determine presence or absence of a pattern defect, said correction corresponding at least to a characteristic of a light shielding portion forming material of the pattern formed on the sample.