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Integrated micromechanical sensor device

  • US 5,744,719 A
  • Filed: 06/12/1996
  • Issued: 04/28/1998
  • Est. Priority Date: 09/21/1993
  • Status: Expired due to Term
First Claim
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1. An integrated micromechanical sensor device, comprising:

  • a sensor body formed of a substrate, a monocrystalline silicon layer disposed on said substrate, and an insulating layer disposed in a predetermined region between said substrate and said silicon layer;

    said silicon layer having trenches with side walls formed therein from an upper surface thereof to a lower boundary surface, and said silicon layer having a first region above said insulating layer and a second region at which said insulating layer is at least partly missing;

    said side walls of said trenches and a side of said silicon layer carrying the lower boundary surface having a first predetermined doping type, and said silicon layer having a second predetermined doping type at least in a partial region thereof;

    a transistor configuration disposed in said first region of said silicon layer; and

    a sensor configuration disposed in said second region (SB) of said silicon layer.

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