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Silicon carbide semiconductor device and process for its production

  • US 5,744,826 A
  • Filed: 01/22/1997
  • Issued: 04/28/1998
  • Est. Priority Date: 01/23/1996
  • Status: Expired due to Term
First Claim
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1. A silicon carbide semiconductor device, comprising:

  • a single crystal hexagonal silicon carbide semiconductor substrate comprising a stack of a first semiconductor layer of a first conductivity-type, a second semiconductor layer of the first conductivity-type having an electric resistance higher than that of said first semiconductor layer, and a third semiconductor layer of a second conductivity-type in this order, said third semiconductor layer having a main surface of a carbon face with a face orientation of about (0001);

    a semiconductor region of the first conductivity-type formed in a predetermined region of said third semiconductor layer in a layer adjacent to said main surface of said third semiconductor layer;

    a trench extending from said main surface through said semiconductor region and said third semiconductor layer and reaching said second semiconductor layer, said trench having side walls extending in the direction of 1120!;

    a fourth semiconductor layer of silicon carbide extending on said side walls of said semiconductor region, said third semiconductor layer and said second semiconductor layer in said trench, said fourth semiconductor layer having a surface;

    a gate insulating film formed at least on said surface of said fourth semiconductor layer;

    a gate electrode layer formed inside said gate insulating film in said trench;

    a first electrode layer formed on at least a portion of said semiconductor region; and

    a second electrode layer formed on a surface of said first semiconductor layer.

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