A1GaInP light emitting diode
First Claim
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1. An AlGaInP light-emitting diode, comprising:
- a GaAs substrate having an ohmic electrode on its rear surface,a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate,a double hetero-junction light-emitting structure of (Alx Ga1-x)y In1-y P provided on the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature,a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, andan ohmic electrode provided on the current diffusion layer.
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Abstract
An AlGaInP light-emitting diode includes a double hetero-junction light-emitting structure of (Alx Ga1-x)y In1-y P on a GaAs substrate. A multi-film reflection layer is provided between the GaAs substrate and the double hetero-junction light-emitting structure. The layers forming the double hetero-junction are lattice matched with the GaAs substrate at an epitaxial growth temperature. A GaP current diffusion layer is disposed on the upper surface of the double hetero-junction light-emitting structure, and ohmic electrodes are provided on the underside of the GaAs substrate and on the upper surface of the current diffusion layer.
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Citations
12 Claims
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1. An AlGaInP light-emitting diode, comprising:
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a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a double hetero-junction light-emitting structure of (Alx Ga1-x)y In1-y P provided on the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An AlGaInP light-emitting diode, comprising:
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a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Alx Ga1-x)y In1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a current diffusion layer formed of GaP provided on the double hetero-junction light-emitting structure, and an ohmic electrode provided on the current diffusion layer. - View Dependent Claims (8, 9)
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10. An AlGaInP light-emitting diode, comprising:
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a GaAs substrate having an ohmic electrode on its rear surface, a reflection layer comprised of a lamination of multiple layers provided on the GaAs substrate, a compositional gradient layer provided on the reflection layer, a double hetero-junction light-emitting structure of (Alx Ga1-x)y In1-y P provided on the compositional gradient layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers, with each of the layers being lattice matched to the GaAs substrate at an epitaxial growth temperature, a compositional gradient layer provided on the double hetero-junction light-emitting structure, a current diffusion layer formed of GaP provided on the compositional gradient layer, and an ohmic electrode provided on the current diffusion layer. - View Dependent Claims (11, 12)
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Specification