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Semiconductor device

  • US 5,744,857 A
  • Filed: 08/09/1996
  • Issued: 04/28/1998
  • Est. Priority Date: 01/30/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a silicon substrate having a surface and a recess 20˜

    150 μ

    m deep at the surface, the recess having a bottom and a plurality of side walls;

    an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is mounted and a wire bonding region where a wire is bonded;

    a semiconductor element mounted on a portion of the electrode within the element region; and

    a wire bonded to a portion of the electrode within the wire bonding region.

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