Semiconductor device
First Claim
1. A semiconductor device comprising:
- a silicon substrate having a surface and a recess 20˜
150 μ
m deep at the surface, the recess having a bottom and a plurality of side walls;
an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is mounted and a wire bonding region where a wire is bonded;
a semiconductor element mounted on a portion of the electrode within the element region; and
a wire bonded to a portion of the electrode within the wire bonding region.
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Accused Products
Abstract
A semiconductor device includes a silicon substrate having a surface and a 20˜150 μm deep recess produced at the surface by anisotropic etching, the recess having a bottom and a plurality of side walls; an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is to be mounted and a wire bonding region where a wire is to be bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. In this semiconductor device, since the electrode is disposed at the flat bottom of the recess, there is no difference in level, i.e., no step, in the region, where the electrode is disposed, between the element region and the wire bonding region. Therefore, unwanted breaking of the electrode is avoided, and degradation of characteristics due to such a breaking is avoided.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a silicon substrate having a surface and a recess 20˜
150 μ
m deep at the surface, the recess having a bottom and a plurality of side walls;an electrode disposed on a region at the bottom of the recess, the region including an element region where a semiconductor element is mounted and a wire bonding region where a wire is bonded; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. - View Dependent Claims (2, 3, 4, 9)
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5. A semiconductor device comprising:
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a silicon substrate having a surface in a plane about 9°
off a (100) plane, and a recess 20-150 μ
m deep at the surface, the recess having a bottom and a plurality of side walls having respective angles of inclination with respect to the bottom of the recess;an electrode disposed on a region including an element region at the bottom of the recess where a semiconductor element is to be mounted, on a wire bonding region at the surface of the substrate outside the recess where a wire is to be bonded, and on the side wall having the smallest of the angles of inclination with respect to the bottom of the recess; a semiconductor element mounted on a portion of the electrode within the element region; and a wire bonded to a portion of the electrode within the wire bonding region. - View Dependent Claims (6, 7, 8, 10)
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Specification