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Three-terminal power mosfet switch for use as synchronous rectifier or voltage clamp

  • US 5,744,994 A
  • Filed: 05/15/1996
  • Issued: 04/28/1998
  • Est. Priority Date: 05/15/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a source region of a first conductivity type;

    a body region of a second conductivity type opposite to said first conductivity type adjacent said source region;

    a drain region of said first conductivity type adjacent said body region, wherein said source region and said body region are connected together and biased at a first voltage and said drain region is biased at a second voltage, said first and second voltages being established such that a junction between said body region and said drain region is forward-biased;

    a gate separated by an insulating layer from a channel region of said body region; and

    a first switch for alternately connecting said gate to said source region or to a third voltage, said third voltage being sufficient to turn said semiconductor device fully on.

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