Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation

• US 5,747,113 A
• Filed: 07/29/1996
• Issued: 05/05/1998
• Est. Priority Date: 07/29/1996
• Status: Expired due to Fees

• Current Assignee: Charles Su-Chang Tsai
• Original Assignee: Charles Su-Chang Tsai
• Inventors: Tsai, Charles Su-Chang
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/688,256
• Time in Patent Office: 645 Days
• Field of Search: 427/255.5, 427/248.1, 118/729, 118/730
• US Class Current: 427/255.5
• CPC Class Codes: C23C 16/4584 the substrate being rotated

Abstract

A chemical vapor deposition process for depositing at least one layer of material onto a plurality of substrates is disclosed, which comprises providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates, wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors, and rotating said secondary susceptors simultaneouly at said two or more rotation rates during at least a portion of depositing said layer, wherein at least one of said two or more signicantly different rotation rates is not zero.

Claims

1. A chemical vapor deposition method for depositing at least one layer of material onto a plurality of substrates, comprising the steps of:

providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates, wherein said rotation means allows simultaneously at least two significantly different rotation rates for said secondary susceptors, and

rotating said secondary susceptors simultaneously at said two or more rotation rates during at least a portion of depositing said layer, wherein at least one of said two or more significantly different rotation rates is not zero.

2. A method according to claim 1, wherein said differeny rotation rates for said secondary susceptors result in different thicknesses and/or compositions associated with at least one of said layer deposited on said substrates.

3. A method according to claim 1, wherein one or more of said rotation rates of said secondary susceptors is changed during the deposition process.

4. A method according to claim 2, wherein one or more of said rotation rates of said secondary susceptors is changed during the deposition process.

5. A chemical vapor deposition method for depositing a plurality of layers of material onto a plurality of substrates, comprising the steps of:

providing a reactor containing a planetary susceptor rotation means comprising a plurality of secondary susceptors for supporting said substrates, wherein said rotation means allows simultaneously at least two independent rotation rates for said secondary susceptors, and

rotating said secondary susceptors simultaneously at two or more significantly different rotation rates during at least a portion of depositing said layers, wherein at least one of said two or more significantly different rotation rates is not zero.

6. A method according to claim 5, wherein said different rotation rates for said secondary susceptors result in different thicknesses and/or compositions associated with at least one of said layers deposited on said substrates.

7. A method according to claim 5, including the further step of:

rotating said secondary susceptors simultaneously at same rotation rate during at least a portion of depositing said layers.

8. A method according to claim 6, including the further step of:

rotating said secondary susceptors simultaneously at same rotation rate during at least a portion of depositing said layers.

9. A method according to claim 5, wherein one or more of said rotation rates of said secondary susceptors is changed during the deposition process.

10. A method according to claim 6, wherein one or more of said rotation rates of said secondary susceptors is changed during the deposition process.