Method for producing a transistor using anodic oxidation

• US 5,747,355 A
• Filed: 05/31/1995
• Issued: 05/05/1998
• Est. Priority Date: 03/30/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Sugawara, Akira, Konuma, Toshimitsu, Tsuji, Takahiro
• Primary Examiner(s): Niebling, John
• Assistant Examiner(s): Mee, Brendan
• Application Number:
  US08/455,151
• Time in Patent Office: 1,070 Days
• Field of Search: 437/983, 437/41 GS, 437/40 GS, 437/41 TFT, 437/40 TFT, 437/236, 437/237, 437/21, 437/41 RLD, 205/124
• US Class Current: 438/163
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: Y10S 257/90 MOSFET type gate sidewall insulating spacer

Abstract

A method for producing a thin-film transistor (TFT) in which the gate electrode is offset from the source and drain without detriment to the characteristics of the device or to manufacturing yield, and a structure for such a TFT, are disclosed. A gate electrode is formed using a material capable of anodic oxidation, and a mask is formed on the gate electrode. Using a comparatively low voltage, a comparatively thick, porous anodic oxide film is formed on the sides of the gate electrode. The mask is then removed and using a comparatively high voltage a dense anodic oxide film is formed at least on the top of the gate electrode. Using the gate electrode having this anodic oxide on its top and sides as a mask, an impurity is introduced into the semiconductor film and an offset structure is obtained.

Claims

1. A process for producing a transistor comprising:

forming a gate insulating film on a semiconductor region formed on a substrate;

forming a first film capable of anodic oxidation on said gate insulating film;

forming a second film on said first film;

patterning said first film and said second film to form a gate electrode comprising a material of said first film and a mask comprising a material of said second film;

forming an anodic oxide mainly on a side surface of said gate electrode by passing an electric current through said gate electrode with said mask remaining on said gate electrode;

removing said mask;

forming an anodic oxide at least on a top surface of said gate electrode by passing an electric current through said gate electrode after removing step; and

introducing an impurity into said semiconductor region using as a mask said gate electrode and at least the anodic oxide formed on said side surface,

wherein a thickness of the anodic oxide formed on the side surface is larger than that of the anodic oxide formed on the top surface.

2. The process of claim 1 wherein said first film comprises an electrically conductive material.

3. The process of claim 1 wherein said second film is made of a photosensitive organic material.

4. The process of claim 1 wherein said first film has a thickness of 3000 to 5000 Å

.

5. The process of claim 1 further comprising the step of irradiating said semiconductor region with a laser light after said introducing step.

6. The process of claim 5 wherein said laser light is emitted from an excimer laser.

7. The process of claim 5 wherein said substrate is heated to a temperature of 200°

to 300°

C. during said irradiating step.

8. A method for producing a transistor comprising the steps of:

forming an active region including a semiconductor material;

forming a gate electrode including an anodizable material over the active region;

forming a first anodic oxide on side and top surfaces of the gate electrode, and

forming a second anodic oxide adjacent to the side surface of the gate electrode with the first anodic oxide interposed therebetween,

wherein the second anodic oxide is more porous than the first anodic oxide.

9. The method of claim 8 wherein a thickness of the second anodic oxide is larger than that of the first anodic oxide.

10. A method for producing a transistor comprising the steps of:

forming an active region including source and drain regions on a substrate;

forming a gate electrode including an anodizable material over the active region; and

forming an anodic oxide on side and top surfaces of the gate electrode, such that the anodic oxide is formed on the side surface with a thickness greater than a thickness of the anodic oxide formed on the top surface,

wherein at least one of the source and drain region is offset from the gate electrode by the thickness of the anodic oxide formed on the side surface.

11. A method of manufacturing an insulated gate thin film transistor comprising the steps of:

preparing a semiconductor island on an insulating surface;

forming an insulating film on said semiconductor island for forming a gate insulating film;

forming a conductive pattern over said semiconductor island with said insulating film therebetween, said conductive pattern comprising an anodizable metal;

masking an upper surface of said conductive pattern with a mask;

performing a first anodic oxidation to form a first anodic oxide film on side surfaces of said conductive pattern;

removing said mask after the first anodic oxidation;

performing a second anodic oxidation after removing said mask to form a second anodic oxide film on both the side and upper surfaces of said conductive pattern wherein said second anodic oxidation is conducted in a different condition from said first anodic oxidation so that said second anodic oxide film is interposed between the first anodic oxide film and said conductive pattern; and

then

introducing ions of a dopant impurity into portions of said semiconductor island, using as a mask said conductive pattern having the first and second anodic oxide films.

12. A method according to claim 11 wherein said semiconductor island comprises crystalline silicon.

13. A method according to claim 11 wherein said second anodic oxide film has a higher density than said first anodic oxide film.

14. A method according to claim 11 wherein said conductive pattern comprises aluminum.

15. A method according to claim 11 wherein said dopant impurity is phosphorous.

16. A method according to claim 11 wherein said ions are introduced into said semiconductor island through said insulating film.

17. A method of manufacturing an insulated gate thin film transistor comprising the steps of:

preparing a semiconductor island on an insulating surface;

forming an insulating film on said semiconductor island for forming a gate insulating film;

forming a conductive pattern over said semiconductor island with said insulating film therebetween, said conductive pattern comprising an anodizable material;

masking an upper surface of said conductive pattern with a mask;

performing a first anodic oxidation to form a first anodic oxide film on side surfaces of said conductive pattern;

performing a second anodic oxidation to form a second anodic oxide film on at least a side surface of said conductive pattern wherein said second anodic oxidation is conducted in a different condition from said first anodic oxidation so that said second anodic oxide film is interposed between the first anodic oxide film and said conductive pattern; and

then

introducing ions of a dopant impurity into portions of said semiconductor island with said conductive pattern having the first and second anodic oxide films used as a mask,

wherein said first anodic oxide is more porous than said second anodic oxide film.

18. A method according to claim 17 wherein said conductive pattern comprises aluminum.

19. A method according to claim 17 wherein said dopant impurity is phosphorous.

20. A method according to claim 17 wherein said semiconductor island comprises crystalline silicon.