Method of metalizing a semiconductor wafer
First Claim
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1. A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of:
- providing a semiconductor wafer;
forming an insulating layer over the semiconductor wafer;
forming a contact-hole through the insulating layer;
depositing a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the copper and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and
depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby.
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Abstract
A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and an Alloy Material such as hafnium, tantalum, magnesium, germanium, silicon, titanium, titanium nitride, tungsten and/or a composite of tungsten, is deposited on the surface in a single step from a single source. In the second step, a layer of the conductive metal is deposited over the alloy layer. Thus, using this method, metallization can be conveniently performed using two chambers.
57 Citations
27 Claims
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1. A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of:
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providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the copper and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of simultaneously metallizing the surface of semiconductor material and filling contact-holes, comprising the steps in the order list of:
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providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; in a first chamber, depositing on the surface of the semiconductor material a layer of an alloy including copper and an Alloy Material, the alloy being deposited in a single step and from a single target formed of both the copper and the Alloy Material, the deposition being continued for time period such that only a portion of the contact-hole is filled with the layer of the alloy; and in a second chamber, depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of simultaneously metallizing the surface of a semiconductor wafer and filling contact-holes, comprising the steps in the order listed of:
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providing a semiconductor wafer; forming an insulating layer over the semiconductor wafer; forming a contact-hole through the insulating layer; depositing a layer of an alloy including aluminum and an Alloy Material, the alloy being deposited in a single step from a single target formed of both the aluminum and the Alloy Material, the deposition being continued for a time period such that only a portion of the contact-hole is filled with the layer of the alloy; and depositing a layer of copper over the layer of alloy substantially filling the contact-hole thereby. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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Specification