×

Method of manufacturing a semiconductor integrated circuit device

  • US 5,747,375 A
  • Filed: 07/01/1996
  • Issued: 05/05/1998
  • Est. Priority Date: 07/22/1993
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of manufacturing a semiconductor integrated circuit device, said method comprising:

  • depositing an insulating film on a semiconductor substrate;

    opening contact holes in said insulating film;

    depositing a silicon nitride film on said insulating film in said contact holes by LPCVD at a temperature between 700°

    C. and 800°

    C. so as to deform edges of said contact holes in said insulating film to be rounded and smooth; and

    removing said silicon nitride film on said insulating film in said contact holes of said insulating film.

View all claims
  • 6 Assignments
Timeline View
Assignment View
    ×
    ×