Method of manufacturing a semiconductor integrated circuit device

• US 5,747,375 A
• Filed: 07/01/1996
• Issued: 05/05/1998
• Est. Priority Date: 07/22/1993
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Sanyo Electric Company Limited (Panasonic Holdings Corporation)
• Inventors: Ohkoda, Toshiyuki, Kaneko, Satoru
• Primary Examiner(s): Bowers, Jr., Charles L.
• Assistant Examiner(s): Thomas, Toniae M.
• Application Number:
  US08/673,052
• Time in Patent Office: 673 Days
• Field of Search: 437/228, 437/228 SE, 437/228 PC, 437/241, 437/238, 438/381, 438/393, 438/759, 438/760, 438/778, 438/791, 438/396
• US Class Current: 438/396
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

A method of manufacturing a semiconductor integrated circuit device employs a new reflowing process of an insulating film having contact holes and openings therethrough. A good step coverage of a wiring electrode at the contact holes of the insulating film can be obtained with reduced thermal cycles in the manufacturing of integrated circuit devices, and also with a reduced heat treatment temperature of the reflowing process. The process includes a step of depositing a silicon nitride film on the insulating film and on the contact holes by chemical vapor deposition at a temperature between 700° C. and 800° C. so as to deform edges of the contact holes in the insulating film to be rounded and smooth.

Claims

1. A method of manufacturing a semiconductor integrated circuit device, said method comprising:

depositing an insulating film on a semiconductor substrate;

opening contact holes in said insulating film;

depositing a silicon nitride film on said insulating film in said contact holes by LPCVD at a temperature between 700°

C. and 800°

C. so as to deform edges of said contact holes in said insulating film to be rounded and smooth; and

removing said silicon nitride film on said insulating film in said contact holes of said insulating film.

2. A method of manufacturing a semiconductor integrated circuit device according to claim 1, wherein said insulating film comprises a boron-phosphosilicate glass film.

3. A method of manufacturing a semiconductor integrated circuit device, said method comprising:

forming lower electrodes;

depositing an insulating film on said lower electrodes;

forming openings in said insulating film so as to expose surfaces of said lower electrodes, and forming contact holes in said insulating film;

depositing a silicon nitride film on said insulating film in said openings and contact holes in said insulating film by LPCVD at a temperature between 700°

C. and 800°

C. so as to deform said edges of said openings and contact holes in said insulating film to be rounded and smooth;

patterning said silicon nitride film so as to remove said silicon nitride film from said contact holes and leave remaining said silicon nitride film on said lower electrodes in said openings; and

forming upper electrodes on said silicon nitride film, said silicon nitride film being sandwiched by said lower electrodes and upper electrodes, respectively, for forming a capacitance element therebetween.

4. A method of manufacturing a semiconductor integrated circuit device according to claim 3, wherein said insulating film comprises a boron-phosphosilicate glass film.