Angular velocity sensor apparatus

• US 5,747,691 A
• Filed: 03/07/1996
• Issued: 05/05/1998
• Est. Priority Date: 03/08/1995
• Status: Expired due to Fees

• Current Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Original Assignee: Nippondenso Co., Ltd. (DENSO Corporation)
• Inventors: Yoshino, Yoshimi, Kato, Kenzi
• Primary Examiner(s): Williams, Hezron E.
• Assistant Examiner(s): MOLLER, RICHARD ALAN
• Application Number:
  US08/612,394
• Time in Patent Office: 789 Days
• Field of Search: 73/504.16, 73/504.04, 73/504.15, 73/504.12, 310/321, 310/329, 310/351, 310/370, 310/332, 310/367
• US Class Current: 73/504.16
• CPC Class Codes: G01C 19/5621 the devices involving a micromechanical structure
• CPC Class Codes: G01C 19/5628 Manufacturing; Trimming; Mounting; Housings

Abstract

A frame body and a tuning fork-shaped vibratory element are made of a single crystalline silicon substrate. The vibratory element has arms extending parallel to each other. The respective sides of the frame body are located face to face with a predetermined distance from the arms. Thin portions are formed between thick portions located partially on the arms of the vibratory element. Piezo-resistant elements for detecting angular velocity are disposed on the thin portions. When electrostatic force is imposed between the sides of the frame body and the arms, the arms are excited to vibrate. At this time, when angular velocity is imposed, the arms vibrate in the direction crossing at right angles with the excited direction. The piezo-resistant elements detect vibration of the arms caused by the angular velocity with stabilized characteristics and higher sensitivity.

Claims

1. An angular velocity sensor apparatus comprising:

a vibratory element having arms in a tuning-fork shape extending parallel to each other, said vibratory element being composed of semiconductor substance, each of said arms having a thin portion disposed between thick portions so that said arm is capable of bending at said thin portion in a direction perpendicular to a plane including said arms;

an exciting means for exciting said vibratory element so that said arms of said vibratory element vibrate in an excitation direction in said plane and perpendicular to said arms; and

strain sensitive elements disposed on said thin portions of said respective arms, each of said strain sensitive elements detecting a bend of said respective arms responsive to an applied angular velocity.

2. An angular velocity sensor apparatus according to claim 1, wherein said exciting means comprises fixed electrodes disposed facing said arms to cause electrostatic force between said arms and said fixed electrodes, respectively.

3. An angular velocity sensor apparatus according to claim 2, wherein said vibratory element and said fixed electrodes are provided on a same semiconductor substrate.

4. An angular velocity sensor apparatus according to claim 3, wherein said semiconductor substrate comprises isolation regions electrically isolating between said fixed electrodes and said vibratory element.

5. An angular velocity sensor apparatus according to claim 4, wherein said isolation regions are diffusion regions forming PN junction isolation.

6. An angular velocity sensor apparatus according to claim 1, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are semiconductor piezo-resistant elements formed at said thin portions.

7. An angular velocity sensor apparatus according to claim 2, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are semiconductor piezo-resistant elements formed at said thin portions.

8. An angular velocity sensor apparatus according to claim 3, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are semiconductor piezo-resistant elements formed at said thin portions.

9. An angular velocity sensor apparatus according to claim 4, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are semiconductor piezo-resistant elements formed at said thin portions.

10. An angular velocity sensor apparatus according to claim 5, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are semiconductor piezo-resistant elements formed at said thin portions.

11. An angular velocity sensor apparatus according to claim 1, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are thin-film piezoelectric elements formed on said thin portions.

12. An angular velocity sensor apparatus according to claim 2, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are thin-film piezoelectric elements formed on said thin portions.

13. An angular velocity sensor apparatus according to claim 3, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are thin-film piezoelectric elements formed on said thin portions.

14. An angular velocity sensor apparatus according to claim 4, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are thin-film piezoelectric elements formed on said thin portions.

15. An angular velocity sensor apparatus according to claim 5, wherein:

said semiconductor substance is single crystalline silicon; and

said strain sensitive elements are thin-film piezoelectric elements formed on said thin portions.

16. An angular velocity sensor apparatus comprising:

a semiconductor substrate patterned to have a tuning-fork shape part and a frame part surrounding and supporting said tuning-fork shape part, said tuning-fork shape part having arms extending parallel to each other, each of said arms having a free end and a thin portion disposed between thick portions so that said arm is capable of bending at said thin portion due to a vibration induced in a direction perpendicular to a plane including said arms;

fixed electrodes provided on sides of said frame part to which said arms of said tuning-fork shape part face, respectively, wherein an excitation voltage is applied between said fixed electrodes and said tuning-fork shape part to excite said tuning-fork shape part so that said arms vibrate in an excitation direction in said plane and perpendicular to said arms; and

strain sensitive elements disposed on said thin portions of said respective arms, each of said strain sensitive elements detecting a bend of said respective arms responsive to an applied angular velocity.

17. An angular velocity sensor apparatus according to claim 16, wherein said semiconductor substrate comprises isolation regions electrically isolating between said fixed electrodes and said tuning-fork shape part.

18. An angular velocity sensor apparatus according to claim 17, wherein said isolation regions are diffusion regions forming PN junction isolation.

19. An angular velocity sensor apparatus according to claim 16, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezo-resistant diffusion regions formed at said thin portions.

20. An angular velocity sensor apparatus according to claim 17, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezo-resistant diffusion regions formed at said thin portions.

21. An angular velocity sensor apparatus according to claim 18, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezo-resistant diffusion regions formed at said thin portions.

22. An angular velocity sensor apparatus according to claim 16, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezoelectric thin-films formed on said thin portions.

23. An angular velocity sensor apparatus according to claim 17, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezoelectric thin-films formed on said thin portions.

24. An angular velocity sensor apparatus according to claim 18, wherein:

said semiconductor substrate is composed of single crystalline silicon; and

said strain sensitive elements are piezoelectric thin-films formed on said thin portions.

25. An angular velocity sensor apparatus according to claim 16, wherein said frame part is provided with bonding pads electrically connected to said fixed electrodes, said tuning-fork shape part and said strain sensitive elements, respectively.

26. An angular velocity sensor apparatus according to claim 17, wherein said frame part is provided with bonding pads electrically connected to said fixed electrodes, said tuning-fork shape part and said strain sensitive elements, respectively.

27. An angular velocity sensor apparatus according to claim 18, wherein said frame part is provided with bonding pads electrically connected to said fixed electrodes, said tuning-fork shape part and said strain sensitive elements, respectively.

28. An angular velocity sensor apparatus according to claim 19, wherein said frame part is provided with bonding pads electrically connected to said fixed electrodes, said tuning-fork shape part and said strain sensitive elements, respectively.

29. An angular velocity sensor apparatus according to claim 22, wherein said frame part is provided with bonding pads electrically connected to said fixed electrodes, said tuning-fork shape part and said strain sensitive elements, respectively.

30. An angular velocity sensor apparatus according to claim 25, wherein said tuning-fork shape part is provided with a diffusion region electrically connecting said strain sensitive element and said bonding pad.

31. An angular velocity sensor apparatus according to claim 26, wherein said tuning-fork shape part is provided with a diffusion region electrically connecting said strain sensitive element and said bonding pad.