Infrared solid-state image pickup device and infrared solid-state image pickup apparatus equipped with this device
First Claim
1. An infrared solid-state image pickup device comprising:
- a substrate which is transparent with respect to infrared light;
a first light receiving element formed on said substrate and includinga first photoelectric conversion portion formed on a first major surface of said substrate,a first infrared transparent insulating layer formed on said first photoelectric conversion portion, anda first reflecting layer formed on said first infrared transparent insulating layer,a first optical cavity with a first predetermined optical distance being formed between said first photoelectric conversion portion and said first reflecting layer; and
a second light receiving element formed on said substrate and includinga second photoelectric conversion portion formed on said first major surface of said substrate,a second infrared transparent insulating layer formed on said second photoelectric conversion portion, anda second reflecting layer formed on said second infrared transparent insulating layer,a second optical cavity with a second predetermined optical distance, which is different from said first predetermined optical distance by more than 100 nm, being formed between said second photoelectric conversion portion and said second reflecting layer;
wherein said first predetermined optical distance is set such that a valley in sensitivity to light incident to said first optical cavity exists at a predetermined wavelength within a predetermined wavelength range in a sensitivity curve of said first optical cavity, andlight within said wavelength range being photoelectrically convertible by said second light receiving element, andwherein said first and second photoelectric conversion portions convert light incident from a second major surface of said substrate, which is opposite to said first major surface, and transmitted through said substrate.
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Abstract
The infrared solid-state image pickup device of the present invention comprises a light-receiving portion formed by arranging, on a transparent substrate, light-receiving elements of a plurality of types respectively including optical cavity structures with optical distances between photoelectric conversion portions and reflecting films which are different from each other by more than 100 nm. The light-receiving elements of at least one of the plurality of types having optical cavity structures whose optical distances are set such that a valley in sensitivity exists at a predetermined wavelength within a predetermined wavelength range, light within the wavelength range being photoelectrically convertible by the light-receiving elements of other types. Hence, the light-receiving portion can be divided into wavelength bands, and a structure enabling control of a wavelength sensitivity, can have, in an infrared range, a function corresponding to a complementary color detection function in a so-called visible range.
28 Citations
13 Claims
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1. An infrared solid-state image pickup device comprising:
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a substrate which is transparent with respect to infrared light; a first light receiving element formed on said substrate and including a first photoelectric conversion portion formed on a first major surface of said substrate, a first infrared transparent insulating layer formed on said first photoelectric conversion portion, and a first reflecting layer formed on said first infrared transparent insulating layer, a first optical cavity with a first predetermined optical distance being formed between said first photoelectric conversion portion and said first reflecting layer; and a second light receiving element formed on said substrate and including a second photoelectric conversion portion formed on said first major surface of said substrate, a second infrared transparent insulating layer formed on said second photoelectric conversion portion, and a second reflecting layer formed on said second infrared transparent insulating layer, a second optical cavity with a second predetermined optical distance, which is different from said first predetermined optical distance by more than 100 nm, being formed between said second photoelectric conversion portion and said second reflecting layer; wherein said first predetermined optical distance is set such that a valley in sensitivity to light incident to said first optical cavity exists at a predetermined wavelength within a predetermined wavelength range in a sensitivity curve of said first optical cavity, and light within said wavelength range being photoelectrically convertible by said second light receiving element, and wherein said first and second photoelectric conversion portions convert light incident from a second major surface of said substrate, which is opposite to said first major surface, and transmitted through said substrate. - View Dependent Claims (2, 3, 4, 12, 13)
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5. An infrared solid-state image pickup apparatus comprising:
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a device including a substrate which is transparent with respect to infrared light; a first light receiving element formed on said substrate and including a first photoelectric conversion portion formed on a first major surface of said substrate, a first infrared transparent insulating layer formed on said first photoelectric conversion portion, and a first reflecting layer formed on said first infrared transparent insulating layer, a first optical cavity with a first predetermined optical distance being formed between said first photoelectric conversion portion and said first reflecting layer; a second light receiving element formed on said substrate and including a second photoelectric conversion portion formed on said first major surface of said substrate, a second infrared transparent insulating layer formed on said second photoelectric conversion portion, and a second reflecting layer formed on said second infrared transparent insulating layer, a second optical cavity with a second predetermined optical distance, which is different from said first predetermined optical distance by more than 100 nm, being formed between said second photoelectric conversion portion and said second reflecting layer; an optical system to guide light from an object to said first and second light receiving elements; and an arithmetic circuit to read signals generated from said first and second light receiving elements; wherein said first predetermined optical distance is set such that a valley in sensitivity to light incident to said first optical cavity exists at a predetermined wavelength within a predetermined wavelength range in a sensitivity curve of said first optical cavity, light within said wavelength range being photoelectrically convertible by said second light receiving element, and wherein said first and second photoelectric conversion portions convert light incident from a second major surface of said substrate, which is opposite to said first major surface, and transmitted through said substrate. - View Dependent Claims (6, 7, 8, 9, 10, 11)
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Specification