Ferroelectric cold cathode

• US 5,747,926 A
• Filed: 03/08/1996
• Issued: 05/05/1998
• Est. Priority Date: 03/10/1995
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Ohashi, Hiromichi, Nakamoto, Masayuki
• Primary Examiner(s): O'Shea, Sandra L.
• Assistant Examiner(s): HAYNES, MACK NELSON
• Application Number:
  US08/612,577
• Time in Patent Office: 788 Days
• Field of Search: 313/309, 313/311, 313/336, 313/346 R, 313/351, 313/495-97, 315/169.1, 315/169.3, 445/50, 445/51
• US Class Current: 313/495
• CPC Class Codes: H01J 1/30 Cold cathodes, e.g. field-emissive cathode
• CPC Class Codes: H01J 2201/304 Field emission cathodes
• CPC Class Codes: H01J 2201/306 Ferroelectric cathodes

Abstract

A ferroelectric cold cathode comprising a ferroelectric layer formed of a ferroelectric material and provided on its one surface with an emitter which is a projection having a sharp tip portion, a first electrode layer formed on one surface of the ferroelectric layer and having an opening allowing the sharp tip portion of the emitter to be exposed therethrough, and a second electrode layer formed on the other surface of the ferroelectric layer. When a voltage is applied between the first electrode and the second electrode, a dielectric polarization is reversed in the ferroelectric layer, resulting in the emission of electrons from the sharp tip portion of the emitter.

Claims

1. A ferroelectric cold cathode comprising;

a ferroelectric layer formed of a ferroelectric material and having an emitter which is a projection having a sharp tip portion on a first surface of the ferroelectric layer;

a first electrode layer formed on said first surface of the ferroelectric layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethrough; and

a second electrode layer formed on a second surface of the ferroelectric layer, wherein said second surface is opposite said first surface.

2. The ferroelectric cold cathode according to claim 1, which further comprises a voltage-applying means adapted to apply a voltage between the first electrode and the second electrode thereby to reverse a dielectric polarization in the ferroelectric layer.

3. The ferroelectric cold cathode according to claim 2, wherein said voltage-applying means is a pulse voltage-applying means.

4. The ferroelectric cold cathode according to claim 1, wherein said ferroelectric material is selected from the group consisting of PbZrO₃ --PbTiO₃ system material (PZT), (Pb, La)(Zr, Ti)O₃ system material (PLZT), PbTiO₃ system material, (Pb, Ca)TiO₃ system material, Pb(Mg_1/3 Nb_2/3)O₃ --PbZrO₃ --PbTiO₃ system material, LaTiO₃, LiNbO₃, and SrTiO₃ system material.

5. The ferroelectric cold cathode according to claim 1, wherein said sharp tip portion has a radius of curvature ranging from 0.5 to 500 nm.

6. The ferroelectric cold cathode according to claim 1, wherein said emitter is of a pyramidal, cone or ridge shape.

7. The ferroelectric cold cathode according to claim 1, which further comprises an insulating film formed between said ferroelectric layer and said first electrode layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethough.

8. A ferroelectric cold cathode comprising;

a ferroelectric layer formed of a ferroelectric material and having an emitter which is a projection having a sharp tip portion on a first surface of the ferroelectric layer;

a first electrode layer formed on said first surface of the ferroelectric layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethrough;

a first insulating film formed on said first electrode layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethrough;

an auxiliary electrode formed on said first insulating film and having an opening allowing said sharp tip portion of the emitter to be exposed therethrough; and

a second electrode layer formed on a second surface of the ferroelectric layer, wherein said second surface is opposite said first surface.

9. The ferroelectric cold cathode according to claim 8, which further comprises a voltage-applying means adapted to apply a voltage between the first electrode and the second electrode thereby to reverse a dielectric polarization in the ferroelectric layer.

10. The ferroelectric cold cathode according to claim 9, wherein said voltage-applying means is a pulse voltage-applying means.

11. The ferroelectric cold cathode according to claim 8, wherein said ferroelectric material is selected from the group consisting of PbZrO₃ --PbTiO₃ system material (PZT), (Pb, La)(Zr, Ti)O₃ system material (PLZT), PbTiO₃ system material, (Pb, Ca)TiO₃ system material, Pb(Mg_1/3 Nb_2/3)O₃ --PbZrO₃ --PbTiO₃ system material, LaTiO₃, LiNbO₃, and SrTiO₃ system material.

12. The ferroelectric cold cathode according to claim 8, wherein said sharp tip portion has a radius of curvature ranging from 0.5 to 500 nm.

13. The ferroelectric cold cathode according to claim 8, wherein said emitter is of a pyramidal, cone or ridge shape.

14. The ferroelectric cold cathode according to claim 8, which further comprises an insulating film formed between said ferroelectric layer and said first electrode layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethough.

15. An electronic device comprising a ferroelectric cold cathode and an anode disposed to face to said ferroelectric cold cathode, wherein said ferroelectric cold cathode comprises;

a ferroelectric layer formed of a ferroelectric material and having an emitter which is a projection having a sharp tip portion on a first surface of the ferroelectric layer;

a first electrode layer formed on said first surface of the ferroelectric layer and having an opening allowing said sharp tip portion of the emitter to be exposed therethrough;

a second electrode layer formed on a second surface of the ferroelectric layer wherein said second surface is opposite said first surface;

and a voltage-applying means adapted to apply a voltage between said first electrode and said second electrode thereby to reverse a dielectric polarization in said ferroelectric layer and thereby allowing electrons to be emitted from the sharp tip portion of said emitter and then to reach to said anode.

16. The electronic device according to claim 15, therein the electronic device is a display device having a fluorescent layer interposed between said ferroelectric cold cathode and said anode.

17. The electronic device according to claim 15, wherein said voltage-applying means is a pulse voltage-applying means.

18. The electronic device according to claim 15, wherein said ferroelectric material is selected from the group consisting of PbZrO₃ --PbTiO₃ system material (PZT), (Pb, La)(Zr, Ti)O₃ system material (PLZT), PbTiO₃ system material, (Pb, Ca)TiO₃ system material, Pb(Mg_1/3 Nb_2/3)O₃ --PbZrO₃ --PbTiO₃ system material, LaTiO₃, LiNbO₃, and SrTiO₃ system material.

19. The electronic device according to claim 15, wherein said sharp tip portion has a radius of curvature ranging from 0.5 to 500 nm.

20. A method of manufacturing a ferroelectric cold cathode which comprises the steps of;

forming a depression in a substrate;

depositing a ferroelectric material over a surface of the substrate including said depression thereby forming a ferroelectric layer;

removing said substrate to expose said ferroelectric material deposited in said depression thereby to form an emitter which is a projection having a sharp tip portion on a first surface of the ferroelectric layer;

forming a first electrode layer on said first surface of said ferroelectric layer where said emitter is disposed in such a manner as to allow said sharp tip portion of the emitter to be exposed therethrough; and

forming a second electrode layer on a second surface of said ferroelectric layer, wherein said second surface is opposite said first surface.