Endpoint detecting apparatus in a plasma etching system

• US 5,748,297 A
• Filed: 12/06/1996
• Issued: 05/05/1998
• Est. Priority Date: 12/13/1995
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Shin-Hyun, Kim, Chang-Sik, Suk, Jong-Wook, Park, Jin-Ho
• Primary Examiner(s): EVANS, FANNIE L
• Application Number:
  US08/761,788
• Time in Patent Office: 515 Days
• Field of Search: 356/311, 356/316, 356/72, 156/626.1
• US Class Current: 356/72
• CPC Class Codes: G01N 21/68 using high frequency electric fields

Abstract

An apparatus used for detecting the endpoint or described completion point of an etching process has a detection window, an optical cable, and a bracket for fixedly holding the detection window and the optical cable with respect to each other. The detection window protrudes outwardly from a wall of a reaction chamber. The optical cable transmits light generated during an etching process from the detection window to a detecting device separate from the detection chamber. The bracket is attached to the wall of the reaction chamber so as to configure a space between the bracket and the detection window. The configuration reduces the intensity of the electric field formed between the bracket and plasma in the reaction chamber.

Claims

1. A system for detecting an endpoint in a plasma etching system having a plasma reaction chamber, said system comprising:

a detection window provided at a wall of said reaction chamber, said detection window protruding outwardly from said reaction chamber wall;

a detecting apparatus disposed separately from said reaction chamber;

an optical cable for transmitting light to said detecting apparatus, said light being generated during an etching process and transmitted through said detection window to said optical cable;

a bracket for fixedly holding said detection window and said optical cable with respect to each other, said bracket being attached to an outer surface of said wall; and

means, externally arranged to said reaction chamber, for reducing intensity of an electric field formed between the bracket and said reaction chamber.

2. The system of claim 1, wherein said means for reducing comprises a space defined between said bracket and said detection window.

3. The system as claimed in claim 1, wherein said bracket is made from a material having a high electrical resistance.

4. The system as claimed in claim 3, wherein said bracket has an electric resistance not less than 0.01 ohm.

5. The system as claimed in claim 2, wherein plasma in said reaction chamber is configured in a stable state.

6. The system as claimed in claim 2, wherein said bracket is spaced apart from said detection window at a distance not less than 5 mm.

7. The system as claimed in claim 4, wherein said bracket has a thickness not less than 10 mm.