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Polysilicon pillar diode for use in a non-volatile memory cell

  • US 5,751,012 A
  • Filed: 06/07/1995
  • Issued: 05/12/1998
  • Est. Priority Date: 06/07/1995
  • Status: Expired due to Term
First Claim
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1. A memory cell having a first and second nodes, said cell comprising:

  • a memory element having a layer of programmable resistive material bounded by a first electrode and a second electrode, said memory element electrically coupled to said first node; and

    a diode formed by depositing at least three silicon layers on a substrate and by selectively etching through said silicon layers to form a distinct pillar of silicon layers, said diode being electrically coupled to said memory element and to said second node, and said silicon layers comprising an N- layer, an N+ layer, and a P+ layer.

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