Insulated gate semiconductor device
First Claim
1. An insulated gate semiconductor device, comprising:
- a first semiconductor layer of a first conductivity type having first and second main surfaces;
a second semiconductor layer of a second conductivity type with a low impurity concentration provided on the first main surface of said first semiconductor layer;
a third semiconductor layer of the second conductivity type with an impurity concentration higher than the impurity concentration of said second semiconductor layer and provided in close contact on a surface of said second semiconductor layer;
a fourth semiconductor layer of the first conductivity type provided in close contact on a surface of said third semiconductor layer;
a fifth semiconductor layer of the second type selectively provided in a surface of said fourth semiconductor layer;
a trench having an opening in a surface of said fifth semiconductor layer and having a depth extending through at least said fourth semiconductor layer from the surface of said fifth semiconductor layer;
an insulating film provided on an entire inner wall of said trench;
a control electrode provided in said trench, facing said fourth semiconductor layer through said insulating film;
a first main electrode provided on the surface of said fourth and fifth semiconductor layers; and
a second main electrode provided on the second main surface of said first semiconductor layer wherein said second semiconductor layer is thicker than said third semiconductor layer.
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Accused Products
Abstract
It is an object to obtain an insulated gate semiconductor device with an unreduced current value capable of being turned off while adopting structure for reducing the ON voltage, and a manufacturing method thereof. An N layer (43) is provided in close contact on a surface of an N- layer (42), a P base layer (44) is provided in close contact on the surface of the N layer (43), and a trench (47) which passes at least through the P base layer (44) is provided, and a gate electrode (49) is provided in the trench (47) through a gate insulating film (48). The carrier distribution of the N- layer (42) becomes closer to the carrier distribution of a diode, and an ON voltage is decreased and a current value capable of being turned off is not decreased when turning off. Accordingly, there are provided an insulated gate semiconductor device with low power consumption, small size, large capacity and high reliability.
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Citations
11 Claims
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1. An insulated gate semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type having first and second main surfaces; a second semiconductor layer of a second conductivity type with a low impurity concentration provided on the first main surface of said first semiconductor layer; a third semiconductor layer of the second conductivity type with an impurity concentration higher than the impurity concentration of said second semiconductor layer and provided in close contact on a surface of said second semiconductor layer; a fourth semiconductor layer of the first conductivity type provided in close contact on a surface of said third semiconductor layer; a fifth semiconductor layer of the second type selectively provided in a surface of said fourth semiconductor layer; a trench having an opening in a surface of said fifth semiconductor layer and having a depth extending through at least said fourth semiconductor layer from the surface of said fifth semiconductor layer; an insulating film provided on an entire inner wall of said trench; a control electrode provided in said trench, facing said fourth semiconductor layer through said insulating film; a first main electrode provided on the surface of said fourth and fifth semiconductor layers; and a second main electrode provided on the second main surface of said first semiconductor layer wherein said second semiconductor layer is thicker than said third semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An insulated gate semiconductor device, comprising:
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a first semiconductor layer of a first conductivity type having first and second main surfaces; a second semiconductor layer of a second conductivity type with a low impurity concentration provided on the first main surface of said first semiconductor layer; a third semiconductor layer of the second conductivity type with an impurity concentration higher than the impurity concentration of said second semiconductor layer and provided in close contact on a surface of said second semiconductor layer; a fourth semiconductor layer of the first conductivity type provided in close contact on a surface of said third semiconductor layer; a fifth semiconductor layer of the second type selectively provided in a surface of said fourth semiconductor layer; a trench having an opening in a surface of said fifth semiconductor layer and having a depth extending through at least said fourth semiconductor layer from the surface of said fifth semiconductor layer; an insulating film provided on an inner wall of said trench; a control electrode provided in said trench, facing said fourth semiconductor layer through said insulating film; a first main electrode provided on the surface of said fourth and fifth semiconductor layers, said first main electrode not contacting any other semiconductor layer than said fourth and fifth semiconductor layers; and a second main electrode provided on the second main surface of said first semiconductor layer wherein said second semiconductor layer is thicker than said third semiconductor layer.
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Specification