Compact semiconductor device having excellent electrical characteristics and long time reliability

• US 5,751,067 A
• Filed: 06/07/1995
• Issued: 05/12/1998
• Est. Priority Date: 04/02/1992
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Mikagi, Kaoru
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US08/487,654
• Time in Patent Office: 1,070 Days
• Field of Search: 257/750, 257/751, 257/753, 257/758, 257/761-764, 257/766-770
• US Class Current: 257/764
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76855 After-treatment introducing at least one additional element into the layer
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53252 Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In a semiconductor device which includes a semiconductor substrate, a first insulator layer on the substrate, a conductor pattern formed by a conductive material and arranged on the first insulator layer, the conductor pattern is overlaid by a reacted conductor layer reacted with the conductive material. The conductor pattern is protected by the reacted conductor layer from corrosion. Preferably, a second insulator layer is covered on the reacted conductor layer and is fixedly adhered to the conductor pattern.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a principal surface;

an insulator layer which is formed on said principal surface;

a first conductor layer which is formed on said insulator layer with a partial area of said insulator layer exposed around said first conductor layer;

a second conductor layer which is stacked on said first conductor layer;

a third conductor layer which is deposited on said second conductor layer and which has an upper portion and a side portion;

a fourth conductor layer which is formed on said third conductor layer; and

a reacted layer which is overlaid on at least said upper and side portions of said third conductor layer and is formed by reaction between said third and said fourth conductor layers;

wherein said fourth conductor layer is formed by nitrogen compounds including a metal selected from a group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, and Ni.

2. A semiconductor device comprising:

a semiconductor substrate having a principal surface;

an insulator layer which is formed on said principal surface;

a first conductor layer which is formed on said insulator layer with a partial area of said insulator layer exposed around said first conductor layer;

a second conductor layer which is stacked on said first conductor layer,

a third conductor layer which is deposited on said second conductor layer and which has an upper portion and a side portion;

a fourth conductor layer which is formed on said third conductor layer; and

a reacted layer which is overlaid on at least said upper and side portions of said third conductor layer and is formed by reaction between said third and said fourth conductor layers;

wherein said fourth conductor layer is formed by boron compounds including a metal selected from a group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, and Ni.