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Compact semiconductor device having excellent electrical characteristics and long time reliability

  • US 5,751,067 A
  • Filed: 06/07/1995
  • Issued: 05/12/1998
  • Est. Priority Date: 04/02/1992
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a principal surface;

    an insulator layer which is formed on said principal surface;

    a first conductor layer which is formed on said insulator layer with a partial area of said insulator layer exposed around said first conductor layer;

    a second conductor layer which is stacked on said first conductor layer;

    a third conductor layer which is deposited on said second conductor layer and which has an upper portion and a side portion;

    a fourth conductor layer which is formed on said third conductor layer; and

    a reacted layer which is overlaid on at least said upper and side portions of said third conductor layer and is formed by reaction between said third and said fourth conductor layers;

    wherein said fourth conductor layer is formed by nitrogen compounds including a metal selected from a group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Co, and Ni.

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