Operational amplifier circuit with an extended input voltage range

• US 5,751,186 A
• Filed: 06/06/1996
• Issued: 05/12/1998
• Est. Priority Date: 11/02/1995
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Nakao, Tomoaki
• Primary Examiner(s): Callahan, Timothy P.
• Assistant Examiner(s): ENGLUND, TERRY LEE
• Application Number:
  US08/659,585
• Time in Patent Office: 705 Days
• Field of Search: 327/560, 327/561, 327/562, 327/563, 327/52, 327/53, 327/65, 327/66, 327/67, 327/72, 327/80, 330/252, 330/253, 330/254, 330/255, 330/257, 330/261, 330/262, 330/263, 330/269, 330/288
• US Class Current: 327/562
• CPC Class Codes: H03F 3/3055 Parallelled mixed SEPP stages, e.g. a CMOS common drain and a CMOS common source in parallel or bipolar SEPP and FET SEPP in parallel
• CPC Class Codes: H03F 3/4521 Complementary long tailed pairs having parallel inputs and being supplied in parallel
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal

Abstract

An operational amplifier circuit 21 comprises transistors N14, N15 in a first output amplifier circuit 24, and transistors P24, P25 in a second output amplifier circuit 25. When a second differential amplifier circuit 23 is cut off, the output is driven by transistor P13 and transistors N14, N15. When a first differential amplifier circuit 22 is cut off, the output is driven by transistor N23 and transistors P24, P25. Therefore, if such a voltage as to cut off one differential amplifier circuit is given from opposite phase and in-phase input terminals 31, 32, the output can be produced. In such constitution, without using depletion type transistors that require particular manufacturing process, the range of the voltage that can be entered in the input terminal can be extended.

Claims

1. An operational amplifier comprising:

first and second input terminals for receiving respective input signals;

first differential amplifying means composed of a pair of n-channel type field effect transistors for providing differential amplification, to the gate of one of which the first input terminal is connected, and to the gate of the other of which the second input terminal is connected;

second differential amplifying means composed of a pair of p-channel type field effect transistors for providing differential amplification, to the gate of one of which the first input terminal is connected, and to the gate of the other of which the second input terminal is connected;

output amplifying means including a first p-channel type field effect output transistor, to the gate of which is inputted an output of the first differential amplifying means, to the source of which is supplied a predetermined first potential, and to the drain of which is supplied a predetermined second potential through a first load element so as to be lower than the predetermined first potential, and a second n-channel type field effect output transistor, to the gate of which is inputted an output of the second differential amplifying means, to the source of which is supplied the predetermined second potential, to the drain of which is supplied the predetermined first potential through a second load element;

an output terminal for providing an output signal commonly connected to the drain of the first field effect output transistor and the drain of the second field effect output transistor; and

wherein the first and second load elements comprise loads having a specific resistance value when the respective differential amplifying means of the first and second differential amplifying means are in a conductive state, and which operate to cut off current flow when the respective differential amplifying means is in a non-conductive state.

2. The operational amplifier of claim 1, wherein the output amplifying means is provided with:

a first switching element interposed between the first load element and the predetermined second potential, or between the first load element and the first field effect output transistor, so as to be cut off when the first differential amplifying means goes into a non-conductive state, and

a second switching element interposed between the second load element and the predetermined first potential, or between the second load element and the second field effect output transistor, so as to be cut off when the second differential amplifying means goes into a non-conductive state.

3. The operational amplifier of claim 2, wherein

control of conduction and cutoff of said first switching element is provided by a source potential of the pair of n-channel field effect transistors in said first differential amplifying means, and

control of conduction and cutoff of said second switching element is provided by a source potential of the pair of p-channel field effect transistors in the second differential amplifying means.

4. The operational amplifier of claim 2, wherein

a bias voltage for producing a specific operating point to each of the pair of field effect transistors for providing differential amplification is respectively supplied to the first and second differential amplifying means,

wherein the first load element comprises a transistor which is made to conduct in response to a bias voltage supplied to the first differential amplifying means, and

wherein the second load element comprises a transistor which is made to conduct in response to a bias voltage supplied to the second differential amplifying means.

5. The operational amplifier of claim 4 wherein the first load element comprises an n-channel type field effect transistor and the second load element comprises a p-channel type field effect transistor.

6. The operational amplifier of claim 3 wherein the first switching element comprises an n-channel type field effect transistor and the second switching element comprises a p-channel type field effect transistor.

7. The operational amplifier of claim 2 wherein the first field effect output transistor comprises a p-channel type field effect transistor and the second field effect output transistor comprises an n-channel type field effect transistor.

8. The operational amplifier of claim 7 and wherein the first load element and the first switching element are comprised of n-channel type field effect transistors and the second load element and the second switching element are comprised of p-channel type field effect transistors.

9. The operational amplifier of claim 8 and wherein the n-channel type field effect transistors comprising the first load and switching elements are connected in series with the p-channel type output transistor and the p-channel type transistors comprising the second load and switching elements and are connected in series with the n-channel type output transistor.

10. An operational amplifier comprising:

first and second input terminals for receiving respective input signals;

first differential amplifying means composed of a pair of n-channel type field effect transistors for providing differential amplification, to the gate of one of which the first input terminal is connected, and to the gate of the other of which the second input terminal is connected;

second differential amplifying means composed of a pair of p-channel type field effect transistors for providing differential amplification, to the gate of one of which the first input terminal is connected, and to the gate of the other of which the second input terminal is connected;

output amplifying means including a first p-channel type field effect output transistor, to the gate of which is inputted an output of the first differential amplifying means, to the source of which is supplied a predetermined first potential, and to the drain of which is supplied a predetermined second potential through a first load element so as to be lower than the predetermined first potential, and a second n-channel type field effect output transistor, to the gate of which is inputted an output of the second differential amplifying means, to the source of which is supplied the predetermined second potential, to the drain of which is supplied the predetermined first potential through a second load element;

an output terminal for providing an output signal commonly connected to the drain of the first field effect output transistor and the drain of the second field effect output transistor; and

wherein the output amplifying means includes;

a first switching element interposed between the first load element and the predetermined second potential, or between the first load element and the first field effect output transistor so as to be cut off when the first differential amplifying means goes into a non-conductive state, and

a second switching element interposed between the second load element and the predetermined first potential, or between the second load element and the second field effect output transistor, so as to be cut off when the second differential amplifying means goes into a non-conductive state.

11. The operational amplifier of claim 10, wherein the first and second load elements comprise loads having a specific resistance value when the respective differential amplifying means of the first and second differential amplifying means are in a conductive state, and which operate to cut off current flow when the respective differential amplifying means is in a non-conductive state.

12. The operational amplifier of claim 10, wherein

control of conduction and cutoff of said first switching element is provided by a source potential of the pair of n-channel field effect transistors in said first differential amplifying means, and

control of conduction and cutoff of said second switching element is provided by a source potential of the pair of p-channel field effect transistors in the second differential amplifying means.

13. The operational amplifier of claim 10, wherein

a bias voltage for producing a specific operating point to each of the pair of field effect transistors for providing differential amplification is respectively supplied to the first and second differential amplifying means,

wherein the first load element comprises a transistor which is made to conduct in response to a bias voltage supplied to the first differential amplifying means, and

wherein the second load element comprises a transistor which is made to conduct in response to a bias voltage supplied to the second differential amplifying means.

14. The operational amplifier of claim 13 wherein the first load element comprises an n-channel type field effect transistor and the second load element comprises a p-channel type field effect transistor.

15. The operational amplifier of claim 12 wherein the first switching element comprises an n-channel type field effect transistor and the second switching element comprises a p-channel type field effect transistor.

16. The operational amplifier of claim 10 wherein the first field effect output transistor comprises a p-channel type field effect transistor and the second field effect output transistor comprises an n-channel type field effect transistor.

17. The operational amplifier of claim 16 and wherein the first load element and the first switching element are comprised of n-channel type field effect transistors and the second load element and the second switching element are comprised of p-channel type field effect transistors.

18. The operational amplifier of claim 17 and wherein the n-channel type field effect transistors comprising the first load and switching elements are connected in series with the p-channel type output transistor and the p-channel type transistors comprising the second load and switching elements and are connected in series with the n-channel type output transistor.