Dynamic memory word line driver

• US 5,751,643 A
• Filed: 03/06/1996
• Issued: 05/12/1998
• Est. Priority Date: 04/06/1990
• Status: Expired due to Term

• Current Assignee: Mosaid Technologies Incorporated (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Original Assignee: Mosaid Technologies Incorporated (MOSAID Technologies Inc. (f/k/a Conversant Intellectual Property Management))
• Inventors: Lines, Valerie L.
• Primary Examiner(s): ZARABIAN, AMIR
• Application Number:
  US08/611,558
• Time in Patent Office: 797 Days
• Field of Search: 365/189.11, 365/189.06, 365/226, 365/230.06, 365/156, 365/149
• US Class Current: 365/189.11
• CPC Class Codes: G11C 11/4085 Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines

Abstract

A circuit which accurately controls the word line (pass transistor gate) driving voltage to a voltage which is both controlled and is not significantly greater than is needed to drive the word line. The elements of the present invention eliminate the need for a double-boot-strapping circuit, and ensure that no voltages exceed that necessary to fully turn on a memory cell access transistor. Accordingly, voltages in excess of that which would reduce reliability are avoided, and accurate driving voltages are obtained. A DRAM includes word lines, memory cells having enable inputs connected to the word lines, apparatus for receiving word line selecting signals at first logic levels V_ss and V_dd, and for providing a select signal at levels V_ss and V_dd, a high voltage supply source V_pp which is higher in voltage than V_dd, a circuit for translating the select signals at levels V_ss and V_dd to levels V_ss and V_pp and for applying it directly to the word lines for application to the enable inputs whereby an above V_dd voltage level on the word line is achieved without the use of double boot-strap circuits.

Claims

1. A random access memory comprising:

word lines;

dynamic memory cells, each comprising a charge storage capacitor for storing a V_dd logic level through an access transistor, the access transistors having enable inputs connected to the word lines;

a high voltage supply which supplies a controlled high voltage V_pp greater than V_dd ; and

a word line driver circuit, including a level shifter with latching, which receives word line selection signals at V_dd logic levels to drive and latch first and second word line control signals at V_pp logic levels, each control signal in a respective latch state being pulled down to a low level through an N-channel transistor as the other control signal is latched high through a P-channel pull-up transistor, the control signals being set and reset by pull-down transistors gated only by V_dd level signals, the word line driver circuit applying the controlled high voltage from the high voltage supply to a word line.

2. A random access memory as claimed in claim 1 wherein the word line driver circuit comprises cross-coupled field effect transistors to latch the control signals.

3. A random access memory as claimed in claim 2 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

4. A random access memory as claimed in claim 2 wherein one of the control signals is applied to the gate of a field effect transistor which is connected source-to-drain between the high voltage supply and the word line.

5. A random access memory as claimed in claim 4 wherein the field effect transistor connected between the high voltage supply and the word line is a P-channel field effect transistor.

6. A random access memory as claimed in claim 5 further comprising an N-channel field effect transistor connected between the word line and ground.

7. A random access memory as claimed in claim 6 wherein the word line driver circuit is a CMOS circuit.

8. A random access memory as claimed in claim 1 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

9. A random access memory as claimed in claim 1 wherein the high voltage level is about V_dd plus a threshold voltage of the access transistor in the memory cell.

10. A random access memory as claimed in claim 9 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

11. A random access memory as claimed in claim 1 wherein the high voltage is at least V_dd plus a threshold voltage of the access transistor in the memory cell and is less than a transistor damaging voltage.

12. A random access memory as claimed in claim 11 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

13. A random access memory as claimed in claim 1 wherein the pull-down transistors which set and reset maintain the control signals in set and reset states.

14. A random access memory comprising:

word lines;

dynamic memory cells, each comprising a charge storage capacitor for storing a V_dd logic level through an access transistor, the access transistors having enable inputs connected to the word lines;

a voltage supply which supplies a controlled voltage V_xx having a V_xx voltage difference between logic levels which exceeds a V_dd voltage difference between the V_dd logic levels; and

a word line driver circuit, including a level shifter with latching, which receives word line selection signals at V_dd logic levels to drive and latch a control signal at V_xx logic levels, the level shifter comprising a pair of cross-coupled transistors forming a latch driven by a pair of reset transistors complementary to the cross-coupled transistors, the reset transistor being gated only by V_dd level signals, the word line driver circuit applying the control voltage from the voltage supply directly to a selected word line.

15. A method of selecting a word line in a dynamic random access memory comprising:

decoding address signals to drive first and second level shifted control signals to logic levels including a voltage level greater than the voltage to be stored in a memory cell and latching the level-shifted control signals, each control signal in a respective latch state being pulled down to a low level through an N-channel transistor as the other control signal is latched high through a P-channel pull-up transistor, the control signal being set and reset by pull-down transistors gated only by V_dd level signals; and

from one of the latched, level-shifted control signals applying a controlled high voltage greater than the stored voltage to a selected word line.

16. A method as claimed in claim 15 wherein the level shifted decoded signals are latched by cross-coupled field effect transistors.

17. A method as claimed in claim 16 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

18. A method as claimed in claim 16 wherein the latched, level-shifted decoded signal is applied to the gate of a field effect transistor which is connected source-to-drain between the high voltage supply and the word line.

19. A method as claimed in claim 18 wherein the field effect transistor connected between the high voltage supply and the word line is a P-channel field effect transistor.

20. A method as claimed in claim 19 wherein nonselected word lines are pulled to ground through N-channel field effect transistors.

21. A method as claimed in claim 18 wherein decoded signals are level shifted and latched in a CMOS circuit.

22. A method as claimed in claim 15 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

23. A method as claimed in claim 15 wherein the high voltage is at least V_dd plus a threshold voltage of the access transistor in the memory cell and is less than a transistor damaging voltage.

24. A method as claimed in claim 23 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

25. A method as claimed in claim 15 wherein the high voltage is at least V_dd plus a threshold voltage of the access transistor in the memory cell and is less than a transistor damaging voltage.

26. A method as claimed in claim 25 wherein the high voltage is applied directly to the word line through a P-channel field effect transistor.

27. A method as claimed in claim 15 wherein the pull-down transistors which set and reset maintain the control signals in set and reset states.

28. A method of selecting a word line in a dynamic random access memory comprising:

decoding address signals to drive level shifted control signals to logic levels having a voltage difference which is greater than the voltage difference between logic levels to be stored in a memory cell and latching the level shifted control signals by latching transistors, the latching transistors being set by reset transistors which are complementary to the latching transistors and gated only by V_dd level signals; and

from the latched, level-shifted control signals, applying a controlled voltage to the selected word line.

29. A dynamic random access memory (DRAM) comprising:

bitlines and word lines and memory cells connected to the bitlines and word lines, each memory cell being comprised of an access field effect transistor (FET) having its source-drain circuit connected between a bitline and a high logic level voltage V_dd bit charge storage capacitor, the field effect transistor having a gate connected to a corresponding word line;

a high V_pp supply voltage source which is in excess of the high logic level voltage V_dd plus one transistor threshold voltage but less than a transistor damaging voltage;

means for receiving only V_dd level logic inputs for selecting the word line and means having an input driven by the selecting means for applying the V_pp supply voltage level directly to the word line through the source-drain circuit of an FET;

the means for applying comprising a level shifter connected to said high supply voltage source and comprising a pair of cross-coupled P-channel FET circuits connected between the high V_pp supply voltage source and a pair of control nodes; and

level shifter driving means connected between the level shifter and ground and connected to the output of the selecting means, the level shifter driving means comprising a pair of N-channel FET circuits, each having source-drain circuits connected between a corresponding one of said control nodes and ground.