Surface mount and flip chip technology for total integrated circuit isolation
First Claim
1. A method of forming an integrated circuit, comprising the steps of:
- providing a semiconductor substrate having a principal surface;
forming a plurality of semiconductor devices in the substrate;
forming a plurality of trenches in the substrate extending from the principal surface thereof into the substrate to a particular depth;
forming a layer of insulating material in each of the trenches;
forming a pattern of conductive lines overlying the principal surface and in electrical contact with the devices;
bonding a thermal conductive plate to the substrate and overlying the principal surface thereof; and
removing a portion of the substrate from a backside surface thereof opposing the principal surface, thereby exposing at least a bottom part of each of the trenches.
2 Assignments
0 Petitions
Accused Products
Abstract
An integrated circuit chip has full trench dielectric isolation of each portion of the chip. Initially the chip substrate is of conventional thickness and has semiconductor devices formed in it. After etching trenches in the substrate and filling them with dielectric material, a heat sink cap is attached to the passivation layer on the substrate front side surface. The substrate backside surface is removed (by grinding or CMP) to expose the bottom portion of the trenches. This fully isolates each portion of the die and eliminates mechanical stresses at the trench bottoms. Thereafter drain or collector electrical contacts are provided on the substrate backside surface. In a flip chip version, frontside electrical contacts extend through the frontside passivation layer to the heat sink cap. In a surface mount version, vias are etched through the substrate, with surface mount posts formed on the vias, to contact the frontside electrical contacts and provide all electrical contacts on the substrate backside surface. The wafer is then scribed into die in both versions without need for further packaging.
190 Citations
7 Claims
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1. A method of forming an integrated circuit, comprising the steps of:
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providing a semiconductor substrate having a principal surface; forming a plurality of semiconductor devices in the substrate; forming a plurality of trenches in the substrate extending from the principal surface thereof into the substrate to a particular depth; forming a layer of insulating material in each of the trenches; forming a pattern of conductive lines overlying the principal surface and in electrical contact with the devices; bonding a thermal conductive plate to the substrate and overlying the principal surface thereof; and removing a portion of the substrate from a backside surface thereof opposing the principal surface, thereby exposing at least a bottom part of each of the trenches. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification