Image display device

• US 5,754,155 A
• Filed: 01/25/1996
• Issued: 05/19/1998
• Est. Priority Date: 01/31/1995
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kubota, Yasushi, Shiraki, Ichiro
• Primary Examiner(s): WU, XIAO MIN
• Application Number:
  US08/591,281
• Time in Patent Office: 845 Days
• Field of Search: 345/87, 345/90, 345/92, 345/98, 345/100, 345/204, 345/205, 345/206, 345/211, 345/102, 349/33, 349/34
• US Class Current: 345/98
• CPC Class Codes: G09G 2300/0408 Integration of the drivers onto the display substrate
• CPC Class Codes: G09G 2320/041 Temperature compensation
• CPC Class Codes: G09G 2330/02 Details of power systems and of start or stop of display operation
• CPC Class Codes: G09G 3/2011 by amplitude modulation
• CPC Class Codes: G09G 3/3648 using an active matrix G09G3/367 - G09G3/3696 take precedence
• CPC Class Codes: G09G 3/3688 suitable for active matrices only
• CPC Class Codes: G09G 3/3696 Generation of voltages supplied to electrode drivers

Abstract

In an image display device, a reference voltage generating circuit of a power supply circuit, which applies power supply voltages V_GH and V_GL to a scan signal line driving circuit, is formed on a substrate where picture elements for display are formed, and a transistor which composes the reference voltage generating circuit has the approximately same threshold voltage as a picture element transistor TR.sub.(PIX) which composes the picture elements for display. As a result, the power supply voltages V_GH and V_GL to the scan signal line driving circuit automatically obtain which is optimized for a characteristic of the transistor TR(PIX) which composes the picture elements for display. Therefore, the power supply voltages V_GH and V_GL do not require adjustment per picture element array or every time when the usage environment is changed. As a result, the cost of adjustment is reduced and convenience of the usage is improved.

Claims

1. An image display device, comprising:

a plurality of picture elements for display which are arranged in a matrix pattern;

a signal supplying circuit for supplying a signal to said picture elements;

a first transistor for changing a display state of said picture elements according to a change in its threshold voltage, said first transistor being provided to said picture elements or said signal supplying circuit;

a second transistor which is formed on a substrate where said first transistor is formed and has the approximately same threshold voltage as said first transistor; and

a power supply circuit having a reference voltage generating circuit for generating a reference voltage based upon the threshold voltage of said second transistor and a current supplying circuit for supplying a current to said signal supplying circuit based upon the output of said reference voltage generating circuit.

2. The image display device as defined in claim 1, wherein:

said first transistor is a picture element transistor which controls the display state on each picture element,

said signal supplying circuit supplies a control signal which controls writing of a video signal to said each picture element transistor.

3. The image display device as defined in claim 1, wherein:

said signal supplying circuit includes said first transistor and supplies a video signal to said each picture element,

said current supplying circuit supplies a driving voltage to said signal supplying circuit.

4. The image display device as defined in claim 1, wherein:

said signal supplying circuit including said first transistor is a buffer amplifier for outputting a video signal of the same level as a video signal to be inputted to each picture element,

said current supplying circuit applies a bias voltage, which adjusts the output level of the video signal, to the buffer amplifier.

5. The image display device as defined in claim 1, wherein said second transistor is formed so as to have the element construction which is approximately same as said first transistor.

6. The image display device as defined in claim 1, wherein said first and second transistors are made of a polycrystal silicon thin film.

7. The image display device as defined in claim 6, wherein said first and second transistors are made of the polycrystal silicon thin film formed at temperature of 300°

C. to 600°

C.

8. The image display device as defined in claim 1, wherein said first and second transistors are made of a monocrystal silicon thin film.

9. The image display device as defined in claim 1, wherein said first and second transistors are made of an amorphous silicon thin film.

10. The image display device as defined in claim 1, wherein said first transistor, said current supplying circuit and said reference voltage generating circuit are formed on one substrate.

11. The image display device as defined in claim 1, wherein said current supplying circuit and said first transistor are formed on different substrates.

12. The image display device as defined in claim 1, wherein said picture elements include liquid crystal.

13. The image display device as defined in claim 11, wherein said current supplying circuit is formed on a monocrystal silicon substrate.