Raman scattered light measuring apparatus

• US 5,754,289 A
• Filed: 12/27/1996
• Issued: 05/19/1998
• Est. Priority Date: 12/30/1995
• Status: Expired due to Term

• Current Assignee: Kyoto Daiichi Kagaku Company Limited
• Original Assignee: Kyoto Daiichi Kagaku Company Limited
• Inventors: Yamaguchi, Yoshinori, Ozaki, Yukihiro, Dou, Xiaoming, Uenoyama, Harumi
• Primary Examiner(s): EVANS, FANNIE L
• Application Number:
  US08/777,282
• Time in Patent Office: 508 Days
• Field of Search: 356/301, 250/339.12, 250/339.07
• US Class Current: 356/301
• CPC Class Codes: G01N 2021/651 Cuvettes therefore
• CPC Class Codes: G01N 21/65 Raman scattering
• CPC Class Codes: G01N 2201/065 Integrating spheres

Abstract

A Raman scattered light measuring apparatus comprises a near infrared semiconductor laser diode as a light source for irradiating a sample with excitation light, while a photoreceiving part for receiving Raman scattered light from the sample comprises a bandpass filter having a vibration wavenumber which is specific to a sample component to be measured as a central wavelength of its transmission region, and a detector consisting of a photodiode of Ge, InAs or InGaAs or a photomultiplier having sensitivity in a near infrared region for detecting Raman scattered light which is transmitted through the bandpass filter.

Claims

1. A Raman scattered light measuring apparatus for irradiating a sample in a sample part to detect Raman scattered light from said sample and thereby measure a target component in said sample, said apparatus comprising:

a near infrared semiconductor laser diode having a wavelength of at least 800 nm for irradiating said sample with excitation light;

a photo receiving part consisting of a filter which passes light having a specific vibration wave number of said target component;

a first detector, comprising a photodetector consisting of Ge, InGaAs or PbS, for detecting said Raman scattered light being transmitted through said filter.

3. The Raman scattered light measuring apparatus in accordance with claim 1 or 2, further comprising a beam splitter being provided on an optical path between said near infrared semiconductor laser diode and said sample part for taking out part of said excitation light and a second detector for detecting said taken-out excitation light, an output signal of said first detector being corrected as a function of the intensity of said excitation light.

4. The Raman scattered light measuring apparatus in accordance with claims 1 or 2, wherein

said filter is a bandpass filter which has spectro-optic characteristics of a mathematical approximate function of the wave form of a target peak of a Raman scattering spectrum or a function being close thereto.

5. The Raman scattered light measuring apparatus in accordance with claim 4, wherein

said bandpass filter has spectro-optic characteristics of a Gaussian or Lorentz function.

6. The Raman scattered light measuring apparatus in accordance with claim 4, wherein said bandpass filter comprises

two bandpass filters overlapped with each other.

7. The Raman scattered light measuring apparatus in accordance with claim 1 or 2, wherein

said sample part comprises an integrating sphere type scattered light reinforcing holder for holding a sample cell.

2. A Raman scattered light measuring apparatus for irradiating a sample in a sample part to detect Raman scattered light from said sample and thereby measure a target component in said sample, said apparatus comprising:

a near infrared semiconductor laser diode having a wavelength of at least 800 nm for irradiating said sample with excitation light;

a photo receiving part consisting of a filter which passes light having a specific vibration wave number of said target component;

a first detector, comprising a photomultiplier having sensitivity in a near infrared region, for detecting said Raman scattered light being transmitted through said filter.