Electrostatic chuck

• US 5,754,391 A
• Filed: 05/17/1996
• Issued: 05/19/1998
• Est. Priority Date: 05/17/1996
• Status: Expired due to Term

• Current Assignee: Saphikon, Inc. (Compagnie de Saint-Gobain SA)
• Original Assignee: Saphikon, Inc. (Compagnie de Saint-Gobain SA)
• Inventors: Bates, Herbert E.
• Primary Examiner(s): FLEMING, FRITZ M
• Application Number:
  US08/649,780
• Time in Patent Office: 732 Days
• Field of Search: 361/230, 361/233, 361/234, 361/235, 269/8, 269/903, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H02N 13/00 Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Abstract

An electrostatic wafer-holding chuck includes first and second dielectric plates formed of single crystal aluminum oxide and at least one electrode disposed within a recess formed in the first dielectric plate. The second dielectric plate has a top wafer-supporting surface that has a fluid distribution network formed therein. The fluid distribution network channels a heat transfer medium to the backside of the wafer. When the first and second dielectric plates are assembled, the first dielectric plate is disposed contiguous to the second dielectric plate and then are diffusively joined together to form a monolithic, hermetically-sealed electrostatic chuck.

Claims

1. An electrostatic wafer-holding chuck, comprising:

a first dielectric plate formed of single crystal aluminum oxide having a first surface and an opposed second surface, said first surface having formed therein a recess,

at least one electrode disposed within the recess formed in the first surface of the first dielectric plate, and

a second dielectric plate formed of single crystal aluminum oxide having a first wafer-supporting surface and an opposed second surface, said first wafer-supporting surface having a fluid distribution network formed therein,

said first dielectric plate disposed contiguous to said second dielectric plate such that said second surface of said second dielectric plate intimately contacts at least a peripheral portion of said first surface of said first dielectric plate,

wherein said single crystal aluminum oxide materials forming said first and second dielectric plates each have a C-axis, said C-axes being aligned so that they are generally parallel relative to each other and form an angle therebetween of less than about 5 degrees when said electrostatic chuck is constructed.

2. The electrostatic chuck of claim 1 wherein said angle formed between said C-axes of the said single crystal aluminum oxide materials forming first and second dielectric plates is between about 1 degree and about 5 degrees.

3. The electrostatic chuck of claim 1 wherein said first and second dielectric plates are diffusely joined together to form a monolithic, hermetically-sealed chuck.

4. The electrostatic chuck of claim 1 wherein said fluid distribution network formed in said first surface of said second dielectric plate includes a fluid distributor and a plurality of outwardly extending fluid passages that are in fluid communication with said fluid distributor.

5. The electrostatic chuck of claim 4 wherein said fluid distribution network further comprises an outer fluid channel that surrounds said fluid distributor and said outwardly extending fluid passages, said outer fluid channel being in fluid communication with said outwardly extending fluid passages.

6. The electrostatic chuck of claim 1 wherein said first dielectric plate further comprises

a first fluid manifold that extends between said first and second surfaces of said first dielectric plate, and

a first electrical passage that extends between said first and second surfaces of said first dielectric plate and opens onto said recess.

7. The electrostatic chuck of claim 6 wherein said second dielectric plate comprises a second fluid manifold that extends between said first and second surfaces of said second dielectric plate, said first and second fluid manifolds being aligned when said dielectric plates are disposed contiguous relative to each other to form a fluid lumen for supplying a heat transfer fluid to said fluid distribution network.

8. An electrostatic chuck system, comprising:

a first dielectric plate formed of single crystal aluminum oxide having a first surface and an opposed second surface, said first surface having formed therein a recess,

an electrode disposed within the recess formed in said first surface of said first dielectric plate,

a second dielectric plate formed of single crystal aluminum oxide having a first wafer-supporting surface and an opposed second surface,said first surface, having a fluid distribution network formed therein,

said second plate being disposed contiguous to said first plate such that the second surface of said second plate intimately contacts a peripheral portion of said first surface of said first dielectric plate, and wherein said single crystal aluminum oxide materials forming said first and second plates each have a C-axis, said C-axes being generally parallel relative to each other and form an angle therebetween of less than about 5 degrees when said electrostatic chuck is constructed,

fluid introduction means coupled to said first and second dielectric plates for introducing a heat transfer fluid to said fluid distribution network, and

voltage means coupled to said electrode for supplying a voltage thereto.

9. The electrostatic chuck system of claim 8 wherein said first and second dielectric plates are diffusively joined together to form a monolithic, hermetically-sealed chuck.

10. A method of producing an electrostatic chuck, comprising the steps of

providing a first dielectric plate formed of a single crystal material having a first surface and an opposed second surface, said first surface having an electrode recess formed therein, and

providing a second dielectric plate formed of a single crystal material having a first wafer-supporting surface and an opposed second surface, said first surface having a fluid distribution network formed therein, wherein said single crystal material of said first and second dielectric plates each have a C-axis, said C-axes being generally parallel relative to each other to form an angle therebetween of less than about 5 degrees when the chuck is constructed,

placing said second dielectric plate contiguous with said first dielectric plate such that said second surface of said second dielectric plate intimately contacts a peripheral portion of said first surface of said first dielectric plate, and

heating said first and second dielectric plates to an elevated temperature in the range between about 1900°

C. and about 2000°

C. to diffusively join said second surface of said second dielectric plate to said first surface of said first dielectric plate.

11. The method of claim 10 further comprising, prior to the step of placing, the step of disposing an electrode in said recess of said first surface of said first dielectric plate.

12. The method of claim 10 wherein said single crystal material comprises single crystal aluminum oxide.

13. The method of claim 10 further comprising the steps of

forming a first fluid manifold that extends between said first and second surfaces of said first dielectric plate,

forming an electrical passage that extends between said first and second surfaces of said first dielectric plate and that opens onto said recess, and

forming a second fluid manifold that extends between said first and second surfaces of said second dielectric plate, said first and second fluid manifolds, when aligned, forming a fluid lumen for supplying a heat transfer fluid to said fluid distribution network.

14. An electrostatic wafer-holding chuck, comprising:

a first dielectric plate formed of single crystal aluminum oxide having a first surface and an opposed second surface, said first surface having formed therein a recess,

at least one electrode disposed within the recess formed in the first surface of the first dielectric plate, and

a second dielectric plate formed of single crystal aluminum oxide having a first wafer-supporting surface and an opposed second surface,

wherein said single crystal aluminum oxide materials forming said first and second dielectric plates each have a C-axis, said C-axes being aligned so that they are generally parallel relative to each other and form an angle therebetween of less than about 5 degrees when the electrostatic chuck is constructed.

15. The electrostatic chuck of claim 14, wherein said wafer-supporting surface of said second dielectric plate has a fluid distribution network formed therein.

16. The electrostatic chuck of claim 15, further comprising

fluid introduction means coupled to said first and second dielectric plates for introducing a heat transfer fluid to said fluid distribution network, and

voltage means coupled to said electrode for supplying a voltage thereto.

17. A method of producing an electrostatic chuck, comprising the steps of

providing a first dielectric plate formed of a single crystal material having a first surface and an opposed second surface, said first surface having an electrode recess formed therein, and

providing a second dielectric plate formed of a single crystal material having a first wafer-supporting surface and an opposed second surface, wherein said single crystal material of said first and second dielectric plates each have a C-axis, said C-axes being generally parallel relative to each other to form an angle therebetween of less than about 5 degrees when the chuck is constructed,

placing said second dielectric plate contiguous with said first dielectric plate such that said second surface of said second dielectric plate contacts a peripheral portion of said first surface of said first dielectric plate, and

heating said first and second dielectric plates to an elevated temperature to join said second surface of said second dielectric plate to said first surface of said first dielectric plate.