Semiconductor memory tester with hardware accelerators

• US 5,754,556 A
• Filed: 07/18/1996
• Issued: 05/19/1998
• Est. Priority Date: 07/18/1996
• Status: Expired due to Term

• Current Assignee: Teradyne Incorporated
• Original Assignee: Teradyne Incorporated
• Inventors: Augarten, Michael H., Ramseyer, Steve G., Michaelson, Steven A.
• Primary Examiner(s): Beausoliel, Jr., Robert W.
• Assistant Examiner(s): Iqbal, Nadeem
• Application Number:
  US08/683,397
• Time in Patent Office: 670 Days
• Field of Search: 371/10.3, 371/21.1, 371/6, 371/21.6, 371/40.1, 371/40.4, 371/10.2, 371/25.1, 371/22.6, 371/41, 371/68.1, 324/765, 395/185.01, 395/182.01, 395/182.04, 395/183.01, 395/183.13, 365/201, 364/551.01
• US Class Current: 714/711
• CPC Class Codes: G01R 31/31937 Timing aspects, e.g. measuring propagation delay G01R31/3191 and G01R31/31922 take precedence; marginal testing G06F11/24
• CPC Class Codes: G11C 29/44 Indication or identification of errors, e.g. for repair
• CPC Class Codes: G11C 29/72 with optimized replacement algorithms

Abstract

A semiconductor memory manufacturing system including a tester sub-system and a redundancy analysis sub-system. The manufacturing system includes a transfer circuit between the test sub-system and the redundancy analysis sub-system that reduces the number of bits of data transferred to the redundancy analyzer. This speeds up the transfer process and also speeds up the redundancy analysis.

Claims

1. A semiconductor memory manufacturing system of the type which manufactures semiconductor memories having rows and columns of memory cells and redundant rows and columns that can be substituted for rows and columns in the semiconductor memory to replace faulty memory cells, comprising:

a) a test sub-system adapted to determine whether each of the cells in a memory under test is faulty, the test system having a catch memory storing failure indications for the cells in the memory under test;

b) an analysis sub-system adapted to determine which rows and columns of the memory under test should be replaced by redundant rows or columns, the analysis sub-system including an analysis memory; and

c) data transfer circuitry connecting the catch memory to the analysis memory, the data transfer circuitry comprising;

i) electronic circuitry for determining, based on the information stored in the catch memory, when a row or column in said semiconductor memory must be replaced and then inhibiting transfer of indications of faulty cells in that row or column; and

ii) data encoding circuitry, connected to the electronic circuitry, for passing to the analysis memory indications of the faulty cells not inhibited by the electronic circuitry.

2. The semiconductor memory manufacturing system of claim 1 wherein the indications of the faulty cells produced by the data encoding circuitry comprises an address for at least a portion of the faulty cells.

3. The semiconductor manufacturing system of claim 2 wherein the indications of the faulty cells produced by the data encoding circuitry comprises a plurality of digital words, each word having a multi-bit address field storing the address of a faulty cell and a plurality of fields, each having fewer bits than the multi-bit address field, representing another memory cell based on its location to the memory cell at the address in the multi-bit address field.

4. The semiconductor manufacturing system of claim 3 wherein each of the plurality of fields has a single bit.

5. The semiconductor manufacturing system of claim 4 wherein the plurality of fields comprises four single bit fields.

6. The semiconductor memory manufacturing system of claim 1 wherein the electronic circuitry for determining comprises:

a) a circuit input receiving a stream of data values, each data value in the stream representing a faulty or not faulty state of a cell in the semiconductor memory;

b) a register for storing a threshold value;

c) means for counting representation of faulty cells in the input stream and asserting a control output when the counted number exceeds the threshold value; and

d) an inhibit circuit having an input connected to the circuit input and an output, the inhibit circuit substituting data values representing the not faulty state for data values indicating a faulty state when the control output is asserted.

7. The semiconductor memory manufacturing system of claim 1 wherein the electronic circuitry for determining comprises:

a) a circuit input receiving a stream of data values, each data value in the stream representing a faulty or not faulty state of a cell in the semiconductor memory;

a) a transfer circuit memory;

b) address generation circuitry coupled to the transfer circuit memory;

c) means for determining when the number of faulty cells in a row or column of said semiconductor memory exceeds a threshold,

d) an inhibit circuit having an input connected to the circuit input and an output, the inhibit circuit further having at least two control inputs, the inhibit circuit substituting data values representing the not faulty state for data values indicating a faulty state when a control input is asserted;

e) a controller to control the electronic circuitry;

i) in a first pass to store in the transfer circuit memory indications from the means from determining of rows or columns that exceed the threshold; and

ii) in a second pass to provide values stored in the transfer circuit memory to one control input of the inhibit circuit and the output of the means for determining to a second control input of the inhibit circuit.

8. A semiconductor memory manufacturing system of the type which manufactures semiconductor memories having rows and columns of memory cells and redundant rows and columns that can be substituted for rows and columns in the semiconductor memory to replace faulty memory cells, comprising:

a) a test sub-system adapted to determine whether each of the cells in a memory under test is faulty, the test system having a catch memory storing failure indications for the cells in the memory under test;

b) an analysis sub-system adapted to determine which rows and columns of the memory under test should be replaced by redundant rows or columns, the analysis sub-system including an analysis memory; and

c) data transfer circuitry connecting the catch memory to the analysis memory, the data transfer circuitry comprising means for encoding a stream of data values indicating faults in a memory under test, the means for encoding providing an output value having a plurality of fields with at least a first of the plurality of fields indicating the address of a faulty cell in the memory under test and at least a second of the plurality of fields indicating whether there is a fault in the cell at an address having a predetermined relationship to the address in the first of the plurality of fields.

9. The semiconductor memory manufacturing system of claim 8 wherein the second of the plurality of fields is a single bit field.

10. The semiconductor memory manufacturing system of claim 8 wherein the predetermined relationship is that the second of the plurality of fields refers to a cell at the address following the address in the first of the plurality of fields.

11. The semiconductor manufacturing system of claim 8 wherein the plurality of fields in the output values comprises a third, fourth and fifth fields, each indicating whether there is a fault in the cell at an address having a predetermined relationship to the address in the first of the plurality of fields.

12. The semiconductor manufacturing system of claim 8 wherein the catch memory has a first data rate and the analysis memory has a second data rate, the second data rate being slower than the first data rate.

13. The semiconductor memory of claim 12 wherein the catch memory is SRAM and the analysis memory is DRAM.

14. The semiconductor memory of claim 12 wherein the second data rate is less than half that of the first data rate.

15. The semiconductor memory of claim 12 wherein the second data rate is less than one quarter of the first data rate.

16. The semiconductor memory of claim 8 wherein the data transfer circuit additionally comprises electronic circuitry for determining, based on the information stored in the catch memory, when a row or column in said semiconductor memory must be replaced and then inhibiting transfer of indications of faulty cells in that row or column.

17. A semiconductor memory manufacturing system of the type which manufactures semiconductor memories having rows and columns of memory cells and redundant rows and columns that can be substituted for rows and columns in the semiconductor memory to replace faulty memory cells, comprising:

a) a test sub-system adapted to determine whether each of the cells in a memory under test is faulty, the test subsystem generating a stream of data values, each data value indicating whether a cell in a memory under test is faulty;

b) an analysis sub-system, receiving an input data stream having values indicating the locations of faults within a memory under test, to determine which rows and columns of the memory under test should be replaced by redundant rows or columns;

c) data transfer circuitry having an input receiving the stream of data values from the test sub-system and an output providing a data stream to the input of the analysis sub-system, the data transfer circuitry including electronic circuitry for determining, based on the information at its input, when a row or column in said semiconductor memory under test must be replaced and then inhibiting transfer of indications of faulty cells in that row or column.

18. The semiconductor memory manufacturing system of claim 17 wherein the electronic circuitry for determining comprises:

a) a data input, the data at the input taking on at different times, one of a plurality of values with a first of the plurality of values indicating that there is a fault in a cell in the memory under test and a second of the plurality of values indicating that there is no fault in a cell in the memory under test;

b) a data output;

c) inhibit means, having a control input, connected between the data input and the data output for, in response to a signal at the control input;

i) passing the data value from the data input to the data output;

or

ii) providing at the data output the value indicating that there is not fault in a cell in the memory under test;

d) control means, having a control output coupled to said control input;

the means comprising;

i) a first counter configured to count occurrences of data values indicating that there is a fault in a cell in the memory under test, the first counter having a reset input; and

ii) a second counter for counting data values at the data input;

iii) means for providing a reset signal to the first counter when the second counter exceeds a predetermined value; and

iv) means for generating a control signal when the first counter exceeds a predetermined value.

19. The semiconductor manufacturing system of claim 18 wherein the control means additionally comprises:

a) a memory having a data input and a data output;

b) means for selectively storing the control signal in the memory.

20. The semiconductor memory manufacturing system of claim 19 wherein the control means additionally comprises means for deriving the control input to the inhibit means from the data output of the memory combined with the output of the means for generating a control signal when the first counter exceeds a predetermined value.