Biomedical device with a protective overlayer

• US 5,755,759 A
• Filed: 03/14/1996
• Issued: 05/26/1998
• Est. Priority Date: 03/14/1996
• Status: Expired due to Fees

• Current Assignee: EIC Laboratories, Inc.
• Original Assignee: EIC Laboratories, Inc.
• Inventors: Cogan, Stuart F.
• Primary Examiner(s): Kamm, William E.
• Application Number:
  US08/616,125
• Time in Patent Office: 803 Days
• Field of Search: 128/635, 128/637, 128/634, 128/642, 604/891.1, 604/892.1, 604/266, 607/1, 607/42, 607/45, 607/48, 607/49, 607/56, 607/57, 607/115, 607/116, 607/117, 607/118, 607/121, 607/137, 204/192.23
• US Class Current: 607/116
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/0551 Spinal or peripheral nerve electrodes

Abstract

A biomedical device provided with a protective overlayer with high electronic resistivity and low permeability to H₂ O; the protective overlayer comprising at least one thin film of amorphous silicon oxycarbide (a-SiOC:H) in which the oxygen/carbon ratio is such that the electronic resistivity of the a-SiOC:H is greater than 10¹⁴ Ω-cm and the H₂ O permeability is less than 5×10¹⁴ molecules/sec-cm².

Claims

1. An improved biomedical device comprising;

A biomedical device having at least one surface to be disposed upon use to living tissue;

A protective overlayer disposed over said surface of said biomedical device;

Said protective overlayer comprising at least one thin-film of a-SiOC;

H having an oxygen to carbon ratio such that the electronic resistivity of said a-SiOC;

H is 10¹⁴ Ω

-cm and the water transport rate through a 0.5 μ

m thick film of said a-SiOC;

H is less than 5×

10¹⁴ molecules/sec-cm².

2. The biomedical device of claim 1, wherein said protective overlayer is comprised of at least one thin-film of a-SiOC:

H containing nitrogen as an impurity, the concentration of said nitrogen being less than the amount necessary to increase the dissolution rate of said a-SiOC;

H to 0.4 nm/day or greater in a physiological electrolyte at 90°

C.

3. The biomedical device of claim 1, wherein said protective overlayer further comprises at least one thin-film planarization layer being disposed between said implantable biomedical device and said a-SiOC:

H thin-film.

4. The biomedical device of claim 1, wherein said protective overlayer further comprises at least one film of a-SiC:

H, said a-SiC;

H having an electronic resistivity of 10¹⁴ Ω

-cm or less.

5. The biomedical device of claim 1, wherein said protective overlayer further comprises at least one films chosen from the group of dielectric materials consisting of Si oxide, Si nitrid, hard carbon, and phosphosilicate glass.

6. The biomedical device of claim 1, wherein said protective overlayer comprises at least one conductive film made from metal chosen from the group of metallic materials consisting of Ti, Ta, Au, Pt, Ir, Pt, PtSi₂ and TiN and alloys thereof.

7. The biomedical device of claim 6 wherein said conductive film is made from Ti.

8. The biomedical device of claim 6 wherein said conductive film is made from Ta.

9. The biomedical device of claim 6 wherein said conductive film is made from Au.

10. The biomedical device of claim 6 wherein said conductive film is made from Pt.

11. The biomedical device of claim 6 wherein said conductive film is made from Ir.

12. The biomedical device of claim 6 wherein said conductive film is made from PtSi₂.

13. The biomedical device of claim 6 wherein said conductive film is made from TiN.

14. The biomedical device of claim 1, wherein said protective overlayer comprises at least one thin-film of said a-SiOC:

H and at least one conductive film.