Semiconductor growth method with thickness control
First Claim
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1. A method of molecular beam epitaxial layer growth by using a process model, comprising the steps of:
- directing a first flow of a growth species at a wafer in a growth chamber to grow a layer of said growth species;
measuring the optical properties of said wafer to obtain a first thickness measurement of said first layer;
comparing said first thickness measurement with said process model to obtain a target thickness based on the doping concentration of said first thickness measurement;
terminating said flow of said growth species when said target thickness has been reached based on said doping concentration.
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Abstract
Molecular beam epitaxy (202) with growing layer thickness and doping control (206) by feedback of sensor signals such as spectrosceopic ellipsometer signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes and hetrojunction bipolar transistors with doped and undoped GaAs layers, AlGaAs and InGaAs.
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22 Claims
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1. A method of molecular beam epitaxial layer growth by using a process model, comprising the steps of:
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directing a first flow of a growth species at a wafer in a growth chamber to grow a layer of said growth species; measuring the optical properties of said wafer to obtain a first thickness measurement of said first layer; comparing said first thickness measurement with said process model to obtain a target thickness based on the doping concentration of said first thickness measurement; terminating said flow of said growth species when said target thickness has been reached based on said doping concentration. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 18, 19, 20, 21, 22)
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12. A method of molecular beam epitaxial layer growth by using a process model, comprising the steps of:
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directing a flow of a growth species at a wafer in a growth chamber to grow a layer of said growth species; measuring the optical properties of said wafer to obtain a first doping level measurement of said first layer; comparing said first doping level measurement with said process model to obtain a target doping level based on the thickness of said first doping level measurement; terminating said flow of said growth species when said target doping level has been reached based on said thickness. - View Dependent Claims (13, 14, 15, 16, 17)
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Current AssigneeTexas Instruments, Inc.
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Original AssigneeTexas Instruments, Inc.
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InventorsDuncan, Walter M., Kim, Tae S., Celii, Francis G.
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Primary Examiner(s)CHAUDHARI, CHANDRA P
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Application NumberUS08/664,940Time in Patent Office711 DaysField of Search437/105, 437/107, 437/133, 437/184, 148/DIG. 72US Class Current438/94CPC Class CodesB24B 37/013 Devices or means for detect...H01L 21/02392 PhosphidesH01L 21/02463 ArsenidesH01L 21/02546 ArsenidesH01L 22/26 Acting in response to an on...
