Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array

• US 5,756,999 A
• Filed: 02/11/1997
• Issued: 05/26/1998
• Est. Priority Date: 02/11/1997
• Status: Expired due to Term

• Current Assignee: FLIR Systems, Inc. (Teledyne Technologies Incorporated)
• Original Assignee: Indigo Systems Corporation (Telecom Eireann)
• Inventors: Woolaway, James T., Parrish, William J.
• Primary Examiner(s): Porta, David P.
• Application Number:
  US08/799,663
• Time in Patent Office: 469 Days
• Field of Search: 250/332, 250/338.1, 250/338.4, 250/349, 250/370.08, 250/252.1 R
• US Class Current: 250/332
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: G01J 5/22 Electrical features thereof
• CPC Class Codes: H04N 25/671 for non-uniformity detection or correction
• CPC Class Codes: H04N 25/673 by using reference sources
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

Correction for temperature-induced non-uniformities in the response characteristics of the microbolometers in an infrared focal plane array (FPA) is performed by applying a non-uniform corrective bias to the individual microbolometers. The corrective bias is applied either before or during the bias or integration period during which the detectors are sampled. The bias-correction can be applied to two-dimensional detector multiplexers at each column amplifier input, the reference potential for each column amplifier or the voltage supply for each detector element. The magnitude of each corrective bias is determined by calibrating the detectors at different temperatures and different levels of incident infrared radiation. According to another aspect of this invention, a microbolometer which is thermally-shorted to the substrate on which the read out integrated circuit (ROIC) is formed is used along with the sensing microbolometer to compensate for variations in temperature. Circuitry for providing on-ROIC substrate temperature control is also described. This invention allows the operation of a microbolometer FPA over a wider range of device substrate temperatures and thereby significantly reduces the complexity and cost of the system as compared with the conventional technique of cooling the FPA.

Claims

1. A microbolometer detector circuit comprising:

a substrate;

a first microbolometer detector attached to said substrate;

a second microbolometer detector thermally shorted to said substrate, said second microbolometer detector being for providing temperature compensation for said first microbolometer detector;

a first voltage source, said first and second microbolometers being connected in series in a conduction path supplied by said first voltage source; and

a transistor connected between said first and second microbolometer detectors in said conduction path, a gate of said transistor being connected to a second voltage source.

2. The microbolometer detector circuit of claim 1 comprising a first output terminal coupled to a first node in said conduction path between said transistor and said second microbolometer detector and a second output terminal coupled to a second node in said conduction path between said second microbolometer detector and said first voltage source.

3. The microbolometer detector circuit of claim 2 comprising a first amplifier coupled to one of said output terminals.

4. The microbolometer detector circuit of claim 3 wherein said first amplifier has inverting input coupled to a first side of said second microbolometer. detector and a non-inverting input coupled to a second side of said second microbolometer detector.

5. The microbolometer detector circuit of claim 1, 2, 3 or 4 wherein said second voltage source comprises a digital-to-analog converter.

6. The microbolometer detector circuit of claim 5 wherein said digital-to-analog converter is for providing a bias for correcting temperature-induced variations in the properties of said first microbolometer detector.

7. The microbolometer detector circuit of claim 1, 2, or 3 comprising a digital-to-analog converter coupled to a third node in said conduction path between said first voltage source and said first microbolometer detector.

8. The microbolometer detector circuit of claim 7 wherein said digital-to-analog converter is for providing a bias for correcting temperature-induced variations in the properties of said first microbolometer detector.

9. The microbolometer detector circuit of claim 4 wherein said first amplifier is provided with a negative feedback loop.

10. The microbolometer detector circuit of claim 3 or 4 comprising a third voltage source coupled to said second microbolometer detector.

21. A two-dimensional array comprising a plurality of microbolometer detector circuits according to claim 1 or 11.

11. A microbolometer detector circuit comprising:

a substrate;

a first microbolometer detector thermally isolated from said substrate; and

a digital-to-analog converter coupled to said first microbolometer detector for providing a bias for correcting temperature-induced variations in the properties of said first microbolometer detector.

12. The microbolometer detector circuit of claim 11 further comprising a second microbolometer thermally-shorted to said substrate.

13. The microbolometer detector circuit of claim 12 wherein said first and second microbolometer detectors are connected in series in a conduction path extending from an output of said digital-to-analog converter.

14. The microbolometer detector circuit of claim 13 comprising a transistor connected between said first and second microbolometer detectors in said conduction path, a gate of said transistor being connected to a first voltage source.

15. The microbolometer detector circuit of claim 14 comprising a first output terminal coupled to a first node in said conduction path between said transistor and said second microbolometer detector and a second output terminal coupled to a second node in said conduction path on an opposite side of said second microbolometer detector from said first node.

16. The microbolometer detector circuit of claim 15 comprising a first amplifier coupled to one of said output terminals.

17. A microbolometer detector circuit comprising:

a substrate;

a first microbolometer detector thermally isolated from said substrate;

a second microbolometer detector thermally shorted to said substrate;

a resistor for providing thermal energy to said substrate; and

a feedback circuit linking said second microbolometer detector and said resistor such that said substrate is maintained at a substantially constant temperature.

18. The microbolometer detector circuit of claim 17 wherein said feedback circuit comprises an amplifier, an output of said amplifier being coupled to said resistor, a first input of said amplifier being coupled to said second microbolometer detector.

19. The microbolometer detector circuit of claim 18 comprising a voltage source coupled to a second input of said amplifier for setting a temperature of said substrate.

20. The microbolometer detector circuit of claim 19 comprising a low-pass filter connected between said second microbolometer detector and said first input of said amplifier.

22. A microbolometer focal plane array comprising:

a substrate;

an array of microbolometer cells each containing a microbolometer detector fixed to said substrate;

an analog-to-digital converter for converting outputs of said microbolometer detectors into digital words;

a data processor programmed to apply a correction algorithm to said digital words to generate bias correction coefficients;

a correction coefficient memory for storing said bias correction coefficients; and

bias correction circuitry for loading said bias correction coefficients into individual microbolometer cells.

23. The microbolometer focal plane array of claim 22 comprising one or more digital-to-analog converters for converting said bias correction coefficients into corrective biases.

24. The microbolometer focal plane array of claim 23 wherein each of said digital-to-analog converters is arranged to apply said bias correction coefficient to a group of said microbolometer detector cells through respective enable switches.

25. The microbolometer focal plane array of claim 23 comprising a plurality of output amplifiers, each of said digital-to-analog converters being connected to one of said output amplifiers.

26. The microbolometer focal plane array of claim 23 wherein each of said digital-to-analog converters is coupled to a gate of a transistor within one of said cells.

27. A method of detecting the level of incident optical radiation comprising:

providing a microbolometer detector, said microbolometer detector being attached to a substrate;

applying a variable voltage bias to said microbolometer detector; and

detecting the resistance of said microbolometer detector, said resistance being representative of the level of said optical radiation.

28. The method of claim 27 wherein the step of detecting the resistance of said microbolometer detector is performed during a sampling period, the step of applying said voltage to said microbolometer detector being performed during said sampling period.

29. The method of claim 27 wherein the step of detecting the resistance of said microbolometer detector is performed during a sampling period, the step of applying said voltage to said microbolometer detector being performed before the beginning of said sampling period.

30. The method of claim 27, 28 or 29 further comprising the step of applying an offset coefficient to an output of said microbolometer detector.

31. The method of claim 27, 28 or 29 further comprising the step of applying an optical gain coefficient to an output of said microbolometer detector.

32. The method of claim 31 further comprising the step of applying an offset coefficient to an output of said microbolometer detector.

33. The method of claim 27 further comprising the step of performing a calibration process to determine the level of said variable voltage bias, said process comprising the step of detecting an output of said microbolometer detector at a first temperature and at a first level of incident optical radiation.

34. The method of claim 33 wherein said calibration process comprises the step of detecting an output of said microbolometer detector at a second temperature and at a second level of incident optical radiation, said first temperature being lower than said second temperature and said first level being lower than said second level.

35. The method of claim 33 or 34 wherein said microbolometer detector is included in an array of microbolometer detectors and said calibration process comprises applying a linear incremental technique to outputs of microbolometer detectors in said array.

36. The method of claim 33 or 34 wherein said microbolometer detector is included in an array of microbolometer detectors and said calibration process includes applying a recursive technique to outputs of microbolometer detectors in said array.

37. A method of detecting the level of incident optical radiation comprising:

providing an array of microbolometer detectors, said microbolometer detectors being attached to a substrate;

transferring a first quantity of energy to a first microbolometer detector and a second quantity of energy to a second microbolometer detector; and

detecting the resistance of each of said microbolometer detectors, said resistance being representative of the level of said optical radiation.

38. The method of claim 37 wherein, as a result of transferring said first quantity of energy to said first microbolometer detector and said second quantity of energy to said second microbolometer detector, the respective optical gains of said first and second microbolometer detectors remain in the substantially the same ratio in relation to a mean optical gain of the microbolometers in the array as said temperature varies within a selected range.

39. The method of claim 37 wherein the step of transferring a first quantity of energy to said first microbolometer and transferring a second quantity of energy to said second microbolometer comprises applying a first voltage bias to said first microbolometer and applying a second voltage bias to said second microbolometer.

40. The method of claim 37 wherein the step of transferring a first quantity of energy to said first microbolometer and transferring a second quantity of energy to said second microbolometer comprises passing a first current through said first microbolometer and passing a second current through said second microbolometer.