Electro-optical device and method of driving the same
First Claim
Patent Images
1. An active-matrix device comprising:
- a substrate having an insulating surface;
at least first and second pixel electrodes arranged in a first column over said substrate;
at least a third pixel electrode arranged in a second column over said substrate, each of said first, second and third pixel electrodes being provided with at least one thin film transistor;
at least first, second and third gate lines extending in parallel over said substrate,wherein said first gate line drives the thin film transistor associated with said first pixel electrode;
said second gate line drives the thin film transistor associated with the third pixel electrode and extends below said first pixel electrode to form a storage capacitor between said second gate line and said first pixel electrode;
said third gate line drives the thin film transistor associated with the second pixel electrode and extends below said third pixel electrode to form a storage capacitor between said third gate line and said third pixel electrode.
0 Assignments
0 Petitions
Accused Products
Abstract
An active matrix display device for suppressing voltage variation ΔV due to off-operation of a gate pulse, including TFTs and picture-element electrodes, at least one of the TFTs being assigned to each picture element, and each of the TFTs having a gate electrode connected to a gate line (first gate line), and a source and a drain one of which is connected to a data line, wherein a picture-element electrode concerned is formed so as to be overlapped with the first gate line through an insulator, and also so as to be overlapped through an insulator with a gate line other than the first gate line or a wiring disposed in parallel to the first gate line.
-
Citations
6 Claims
-
1. An active-matrix device comprising:
-
a substrate having an insulating surface; at least first and second pixel electrodes arranged in a first column over said substrate; at least a third pixel electrode arranged in a second column over said substrate, each of said first, second and third pixel electrodes being provided with at least one thin film transistor; at least first, second and third gate lines extending in parallel over said substrate, wherein said first gate line drives the thin film transistor associated with said first pixel electrode; said second gate line drives the thin film transistor associated with the third pixel electrode and extends below said first pixel electrode to form a storage capacitor between said second gate line and said first pixel electrode; said third gate line drives the thin film transistor associated with the second pixel electrode and extends below said third pixel electrode to form a storage capacitor between said third gate line and said third pixel electrode. - View Dependent Claims (2, 3)
-
-
4. An active-matrix device comprising:
-
a substrate having an insulating surface; at least first and second pixel electrodes arranged in a first column over said substrate; at least a third pixel electrode arranged in a second column over said substrate, each of said first, second and third pixel electrodes being provided with at least one thin film transistor; at least first, second and third gate lines extending in parallel over said substrate, wherein said first gate line drives the thin film transistor associated with said first pixel electrode; said second gate line drives the thin film transistor associated with the third pixel electrode and extends below said first pixel electrode to form a storage capacitor between said second gate line and said first pixel electrode; said third gate line drives the third film transistor associated with the second pixel electrode and extends below said third pixel electrode to form a storage capacitor between said third gate line and said third pixel electrode, and the storage capacitance between the third gate line and the third pixel electrode is substantially equal with a capacitance between said second gate line and said third pixel electrode. - View Dependent Claims (5, 6)
-
Specification