Semiconductor memory integrated circuit with simplified circuit structure

• US 5,757,704 A
• Filed: 06/23/1997
• Issued: 05/26/1998
• Est. Priority Date: 07/30/1996
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Hachiya, Yutaro
• Primary Examiner(s): NGUYEN, TAN
• Application Number:
  US08/881,025
• Time in Patent Office: 337 Days
• Field of Search: 365/189.07, 365/189.02, 365/189.05, 365/230.08, 365/230.02, 365/189.01, 365/233
• US Class Current: 365/189.07
• CPC Class Codes: G11C 7/00 Arrangements for writing information into, or reading information out from, a digital store G11C5/00 takes precedence; auxiliary circuits for stores using semiconductor devices G11C11/4063, G11C11/413
• CPC Class Codes: G11C 7/1051 Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
• CPC Class Codes: G11C 8/00 Arrangements for selecting an address in a digital store for stores using transistors G11C11/407, G11C11/413

Abstract

In a semiconductor memory device, an first address register stores an inputted address and a second address register stores a write address for a write data. A comparing circuit compares both of the stored addresses, and generates a coincidence signal in accordance with the comparing result. A memory cell array composed of a plurality of memory cells. A write data register stores the write data. A data output register selectively receives, one of the write data from the write data register and a read data from the memory cell array as a selected data in response to the control signal and a register clock signal. Then, the data output register outputs the selected data in response to the register clock signal.

Claims

1. A semiconductor memory device comprising:

a first address register for storing an inputted address;

a second address register for storing a write address for a write data;

a comparing circuit for comparing the inputted address stored in said first address register and the write address stored in said second address register and for generating a control signal in accordance with the comparing result;

a memory cell array composed of a plurality of memory cells;

a write data register for storing the write data; and

a data output register for selectively receiving, as a selected data, one of the write data from said write data register and a read data from said memory cell array in response to the control signal and a register clock signal, and for outputting the selected data in response to the register clock signal.

2. A semiconductor memory device according to claim 1, wherein said data output register includes a sense amplifier function to amplify the read data from said memory cell array.

3. A semiconductor memory device according to claim 2, wherein said data output register includes:

a differential transistor pair composed of a pair of bipolar transistors whose collectors are connected to a first power supply line, whose bases receive complimentary signals of the read data, and whose emitter are connected in common to each other.

4. A semiconductor memory device according to claim 1, wherein said comparing circuit generates the control signal in an active level when the inputted address stored in said first address register and the write address stored in said second address register are coincident with each other, and the control signal in an inactive level otherwise, and

wherein said data output register includes a selecting circuit for selecting one of the write data and the read data in response to the control signal.

5. A semiconductor memory device according to claim 4, wherein said data output register includes:

a first circuit section for receiving the read data;

a second circuit section for receiving the write data;

a first MOS transistor connected to said first circuit section and set to a conductive state when the control signal is in the inactive level and to a non-conductive state when the control signal is in the active level; and

a second MOS transistor connected to said second circuit section and set to a conductive state when the control signal is in the active level and to a non-conductive state when the control signal is in the inactive level.

6. A semiconductor memory device according to claim 1, wherein said data output register includes a data holding circuit for holding and outputting the selected data in response to the register clock signal.

7. A semiconductor memory device according to claim 6, wherein said data output register includes:

a selecting circuit for selecting one of the write data and the read data in response to the control signal;

enabling means for enabling said selecting circuit to select one of the write data and the read data in response to the control signal when the register clock signal is in an inactive level; and

holding means for holding the selected data in response to the register clock signal in an active level.

8. A semiconductor memory device according to claim 1, wherein said data output register includes:

a master circuit for selectively receiving one of the write data and the read data as the selected data in response to the control signal and the register clock signal in an inactive level, and holding the selected data in response to the register clock signal in an active level; and

a slave circuit for holding the selected data from said master circuit in response to transition of the register clock signal to an active level.

9. A semiconductor memory device according to claim 8, wherein said control signal is set to an active level before the corresponding register clock signal is set to the active level when the inputted address and the write address are coincident with each other, and said control signal is reset to an inactive level before the register clock signal next to the corresponding register clock signal is set to the active level.

10. A semiconductor memory device according to claim 8, wherein said master circuit includes:

first and second bipolar transistors whose bases respectively receive complimentary signals of the read data, whose collectors are respectively connected to a power supply line via resistors, and which emitters are connected to a common emitter node;

first and second MOS transistors whose gates respectively receive complimentary signals of the write data, whose drains are respectively connected to the power supply line via the resistors, and which sources are connected to a common source node;

a third MOS transistor whose gate receives the control signal, and whose drain is connected to the common emitter node;

a fourth MOS transistor whose gate receives an inverted signal of the control signal, and whose drain is connected to the common source node;

a fifth MOS transistor whose gate receives an inverted signal of the register clock signal, whose drain is connected to sources of said third and fourth MOS transistors, and whose source is connected to a ground line;

third and fourth bipolar transistors whose bases are respectively connected to the collectors of said first and second bipolar transistors, whose collectors are respectively connected to the power supply line, and which emitters are respectively connected to the ground line via constant current sources, the selected data being outputted from the emitters of said third and fourth bipolar transistors;

fifth and sixth bipolar transistors whose collectors are respectively connected to said collectors of said first and second bipolar transistors, whose emitters are respectively connected to said emitters of said third and fourth bipolar transistors, and which emitters are connected in common to each other; and

a sixth MOS transistor whose gate receives said register clock signal, whose drain is connected to said emitters of said fifth and sixth MOS transistors, and whose source is connected to said ground line.

11. A method of reading out a correct data in a semiconductor memory device, comprising the steps of:

holding a write address;

holding a write data;

comparing an inputted read address and the write address to generate a selection control signal in an inactive level when the read address and the write address are not coincident with each other;

reading a read data from a memory cell array in accordance with the read address; and

selecting and outputting the read data in response to the selection control signal in the inactive level and a register clock signal.

12. A method according to claim 11, wherein said comparing step includes generating the selection control signal in an active level during a predetermined time period when the read address and the write address are coincident with each other, and

wherein said step of selecting and outputting includes selecting and outputting the write data in response to the selection control signal in the active level and a register clock signal.

13. A method according to claim 12, wherein said selection control signal is set to the active level before the corresponding register clock signal is set to an active level when the inputted address and the write address are coincident with each other, and said control signal is reset to the inactive level before the register clock signal next to the corresponding register clock signal is set to the active level.

14. A method according to claim 12, wherein said selecting and outputting step includes:

selecting one of the read data and the write data as a selected data in response to the selection control signal;

allowing said selecting step in response to the register clock signal in an inactive level; and

holding the selected data in response to the register clock signal in an active level subsequent to the inactive level.

15. A method according to claim 14, wherein said selecting step includes amplifying the read data when the read data is selected.

16. A semiconductor memory device, comprising:

a memory cell array composed of a plurality of memory cells, for storing a read data;

first holding means for holding a write address;

second holding means for holding a write data;

comparing means for comparing an inputted read address and the write address to generate a selection control signal in an inactive level when the read address and the write address are not coincident with each other;

read means for reading the read data from said memory cell array in accordance with the read address; and

data output means for selecting and outputting the read data in response to the selection control signal in the inactive level and a register clock signal.

17. A semiconductor memory device according to claim 16, wherein said comparing means includes generating the selection control signal in an active level during a predetermined time period when the read address and the write address are coincident with each other, and

wherein said data output means includes means for selecting and outputting the write data in response to the selection control signal in the active level and a register clock signal.

18. A semiconductor memory device according to claim 17, wherein said selection control signal is set to the active level before the corresponding register clock signal is set to an active level when the inputted address and the write address are coincident with each other, and said control signal is reset to the inactive level before the register clock signal next to the corresponding register clock signal is set to the active level.

19. A semiconductor memory device according to claim 17, wherein said data outputting means includes:

selecting means for selecting one of the read data and the write data as a selected data in response to the selection control signal;

enabling means for enabling said selecting means in response to the register clock signal in an inactive level; and

third holding means for holding the selected data in response to the register clock signal in an active level subsequent to the inactive level.

20. A semiconductor memory device according to claim 19, wherein said selecting means includes means for amplifying the read data when the read data is selected.