Semiconductor laser having a transparent light emitting section, and a process of producing the same

• US 5,757,833 A
• Filed: 11/01/1996
• Issued: 05/26/1998
• Est. Priority Date: 11/06/1995
• Status: Expired due to Term

• Current Assignee: Furukawa Electric Company Limited
• Original Assignee: Furukawa Electric Company Limited
• Inventors: Ishikawa, Takuya, Iwai, Norihiro, Arakawa, Satoshi, Ohkubo, Michio, Kasukawa, Akihiko, Ninomiya, Takao
• Primary Examiner(s): Bovernick, Rodney B.
• Assistant Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US08/742,866
• Time in Patent Office: 571 Days
• Field of Search: 372/43, 372/44, 372/45, 372/46, 372/50, 438/33, 438/41, 438/44
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 2302/00 Amplification / lasing wavelength
• CPC Class Codes: H01S 5/164 with window regions comprising semiconductor material with a wider bandgap than the active layer
• CPC Class Codes: H01S 5/2272 grown by a mask induced selective growth
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34306 emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A semiconductor laser is produced by forming a laser activation section and a light emitting section having an InGaAsP layer as a quantum well on a GaAs substrate according to metal organic chemical vapor deposition by using a selective area growth mask, in such a manner that the laser activation section and the light emitting section have different film thicknesses. The laser activation section includes a laser activation layer whose oscillation wavelength is set to 0.8 to 1.1 μm, and the light emitting section includes an optical waveguide layer having a broader forbidden band than the laser activation layer.

Claims

1. A semiconductor laser with a multilayer structure formed on a GaAs substrate, comprising:

a laser activation section and a light emitting section simultaneously formed by a metal organic chemical vapor deposition process using a selective area growth mask to produce an effect that said laser activation section and said light emitting section differ in film thickness,

said laser activation section including a laser activation layer whose laser oscillation wavelength is 0.8 to 1.1 μ

m, and

said light emitting section including an optical waveguide layer, the optical waveguide layer having a broad forbidden band compared with the laser activation layer and having transparency with respect to the laser oscillation wavelength.

2. The semiconductor laser according to claim 1, wherein the laser activation layer of said laser activation section and the optical waveguide layer of said light emitting section each comprise an In_1-x Ga_x As_y P_1-y layer, where x indicates a proportion of Group III elements satisfying a relation of 0<

x<

1, and y indicates a proportion of Group V elements satisfying a relation of 0<

y<

1.

3. The semiconductor laser according to claim 2, wherein the proportion x of the Group III elements in the In_1-x Ga_x As_y P_1-y layer falls within a range of 0.5 to 0.8.

4. A process of producing a semiconductor laser of multilayer structure provided with a light emitting section having transparency with respect to a laser oscillation wavelength of 0.8 to 1.1 μ

m, comprising;

forming a pair of selective area growth masks on a GaAs substrate except for a region where a light emitting section is to be formed in such a manner that a region where a laser activation section is to be formed is situated between said pair of selective area growth masks; and

forming multiple semiconductor layers on said laser activation section-forming region of the GaAs substrate by metal organic chemical vapor deposition by using the selective area growth masks, said multiple semiconductor layers comprising a laser activation layer of a laser activation section having a laser oscillation wavelength band of 0.8 to 1.1 μ

m, and wherein said laser activation section and said light emitting section are simultaneously formed by said metal organic chemical vapor deposition process.

5. The process according to claim 4, wherein said multiple semiconductor layers, which are formed on the GaAs substrate by metal organic chemical vapor deposition and function as a laser activation layer of the laser activation section and an optical waveguide layer of the light emitting section, are obtained by growing an In_1-x Ga_x As_y P_1-y layer, where x indicates a proportion of Group III elements satisfying a relation of 0<

x<

1, and y indicates a proportion of Group V elements satisfying a relation of 0<

y<

1.

6. A process of producing a semiconductor laser of multilayer structure provided with a light emitting section having transparency with respect to a laser oscillation wavelength of 0.8 to 1.1 μ

m, comprising;

forming selective area growth masks on a GaAs substrate in such a manner that a laser activation section-forming region on the GaAs substrate where a laser activation section is to be formed has a predetermined width free of the selective area growth masks, and such that a light emitting section-forming region contiguous with the laser activation section-forming region has a greater width free of the selective area growth masks than the predetermined width; and

forming multiple semiconductor layers on said laser activation section-forming region of the GaAs substrate by metal organic chemical vapor deposition by using the selective area growth masks, said multiple semiconductor layers comprising a laser activation layer of the laser activation section having a laser oscillation wavelength band of 0.8 to 1.1 μ

m, and wherein said laser activation section and said light emitting section are simultaneously formed by said metal organic chemical vapor deposition process.

7. The process according to claim 6, wherein said multiple semiconductor layers, which are formed on the GaAs substrate by metal organic chemical vapor deposition and function as a laser activation layer of the laser activation section and an optical waveguide layer of the light emitting section, are obtained by growing an In_1-x Ga_x As_y P_1-y layer, where x indicates a proportion of Group III elements satisfying a relation of 0<

x<

1, and y indicates a proportion of Group V elements satisfying a relation of 0<

y<

1.