Infrared radiation detector having a reduced active area

• US 5,760,398 A
• Filed: 12/04/1996
• Issued: 06/02/1998
• Est. Priority Date: 12/04/1995
• Status: Expired due to Term

• Current Assignee: Lockheed Martin IR Imaging Systems, Inc. (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin IR Imaging Systems, Inc. (Martin Marietta Corporation)
• Inventors: Blackwell, Richard, Butler, Neal R., Mroczkowski, Jacek
• Primary Examiner(s): Wong, Don
• Application Number:
  US08/760,240
• Time in Patent Office: 545 Days
• Field of Search: 250/332, 250/338.1, 250/338.4, 250/349, 250/370.01, 250/370.08
• US Class Current: 250/332
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 5/02 Constructional details
• CPC Class Codes: G01J 5/023 Particular leg structure or construction or shape; Nanotubes
• CPC Class Codes: G01J 5/024 Special manufacturing steps or sacrificial layers or layer structures
• CPC Class Codes: G01J 5/026 Control of working procedures of a pyrometer, other than calibration; Bandwidth calculation; Gain control
• CPC Class Codes: G01J 5/08 Optical arrangements
• CPC Class Codes: G01J 5/0801 Means for wavelength selection or discrimination
• CPC Class Codes: G01J 5/0806 Focusing or collimating elements, e.g. lenses or concave mirrors
• CPC Class Codes: G01J 5/0815 Light concentrators, collectors or condensers
• CPC Class Codes: G01J 5/085 having a through-hole enabling the optical elements to fulfil an additional optical function, e.g. mirrors or gratings having a through-hole for a light collecting or light injecting optical fiber
• CPC Class Codes: G01J 5/0859 Sighting arrangements, e.g. cameras
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A microbridge detector is with an active area that is smaller than a pixel collection area of the microbridge detector. The microbridge detector includes a semiconductor substrate on a first level and an microbridge level disposed above the semiconductor substrate. The microbridge level includes the active area having the pixel collection area greater than a square area of the active area of the microbridge detector. In addition, downwardly extending leg portions are a continuation of the microbridge level and support the microbridge level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge level and the semiconductor substrate. Further, electrically conductive paths are included within the downwardly extending leg portions and connect the active area in the microbridge level to the semiconductor substrate. With this apparatus, the microbridge detector is provided with a pixel collecting area that is larger than a fill factor of the microbridge detector and thus is provided with an enhanced optical collection sensitivity. In addition, with this apparatus, the microbridge detector device can be fabricated with a smaller active area without having to build a smaller microbridge level and thus is not limited by processing techniques.

Claims

1. A microbridge detector, comprising:

a semiconductor substrate;

a microbridge disposed above the semiconductor substrate, the microbridge including an active area that is smaller than a pixel collection area of the microbridge detector;

downwardly extending leg portions which are a continuation of the microbridge and which support the microbridge above the semiconductor substrate so that a thermal isolation gap exists between the microbridge and the semiconductor substrate; and

electrically conductive paths included within said downwardly extending leg portions connecting the active area to the semiconductor substrate.

2. The microbridge detector of claim 1, wherein the active area is patterned with alternating absorption regions and transmissive windows.

3. The microbridge detector of claim 2, wherein the alternating absorption regions include a layer of absorptive material.

4. The microbridge detector of claim 2, wherein the alternating absorption regions include a thin film layer of temperature responsive resistive material.

5. The microbridge detector of claim 2, wherein the active area is patterned with alternating linear absorption regions and alternating linear transmission windows.

6. The microbridge detector of claim 2, wherein the active area is patterned with rows and columns of absorptive elements dispersed with transmissive windows to form a grid structure, and wherein each row and column of absorptive elements has at least one of a temperature resistive material and an absorptive material.

7. The microbridge detector of claim 1, wherein the active area is a substantially rectangular area located substantially at a center of the microbridge, wherein the electrically conductive paths include first and second electrically conductive paths respectively connected to a first end and a second end of the active area which are spirally wound around the active area, wherein the first and second electrically conductive paths act as antennas to absorb incident radiation and to couple the incident radiation to the active area, and wherein the first and second electrically conductive paths also couple a signal indicating a change in temperature of the active area in response to the incident radiation to the semiconductor substrate.

8. The microbridge detector of claim 1, further comprising a concentrator, disposed between the microbridge and the semiconductor substrate, that reflects incident radiation towards the active area to enhance an absorption efficiency of the detector.

9. The microbridge detector of claim 8, wherein the concentrator is substantially a truncated horn antenna that acts to concentrate the incident radiation transmitted through the microbridge towards the active region so as to create the optical collection area greater than the active area of the detector.

10. The microbridge detector of claim 1, wherein the active area has a length on a side in range of a half of a wavelength and a pixel collecting area in a range of 1 to 2 wavelengths of an operating range of wavelengths of the microbridge detector.

11. The microbridge detector of claim 1, wherein the electrically conductive paths have a length such that a thermal time constant of the microbridge detector is substantially the same as that of a microbridge detector having an active area substantially equal to the pixel correction area of the microbridge detector.

12. A microbridge detector, comprising:

a semiconductor substrate;

a microbridge disposed above the semiconductor substrate, the microbridge including an active area of the microbridge detector;

downwardly extending leg portions which are a continuation of the microbridge and which support the microbridge above the semiconductor substrate so that a thermal isolation gap exists between the microbridge and the semiconductor substrate;

electrically conductive paths included within said downwardly extending leg portions connecting the active area to the semiconductor substrate; and

means for collecting incident radiation with the microbridge detector over a pixel collection area that is greater than the active area of the microbridge detector.

13. The microbridge detector of claim 12, wherein the means for collecting includes the active area which is patterned with alternating absorption regions and alternating transmissive windows.

14. The microbridge detector of claim 13, wherein the alternating absorption regions include a layer of temperature responsive resistive material.

15. The microbridge detector of claim 13, wherein the alternating absorption regions include a layer of absorbing material.

16. The microbridge detector of claim 13, wherein the active area is patterned with alternating linear absorption regions and alternating linear transmission windows.

17. The microbridge detector of claim 13, wherein the active area is patterned with rows and columns of absorptive elements dispersed with transmissive windows to form a grid structure, and wherein each row and column of absorptive elements has at least one of a temperature resistive material and an absorptive material.

18. The microbridge detector of claim 12, wherein the active area is a substantially rectangular patch located at substantially a center of the microbridge, and wherein the means for collecting includes first and second electrically conductive paths connected to a first end and a second end of the active area and which are wound spirally around the active area, wherein the first and second electrically conductive paths act as antennas to absorb incident radiation and to couple the incident radiation to the active area, and wherein the first and second electrically conductive paths also couple a sensed signal indicating a change in temperature of the active area, in response to the incident radiation, to the semiconductor substrate.

19. The microbridge detector of claim 12, wherein the means for collecting includes a concentrator disposed between the microbridge and the semiconductor substrate, that reflects incident radiation towards the active area to enhance an absorption sensitivity of the microbridge detector.

20. The microbridge detector of claim 19, wherein the concentrator is substantially a truncated horn antenna that acts to concentrate the incident radiation transmitted through the microbridge towards the active region.

21. The microbridge detector of claim 12, wherein the active area has a length on a side in range of a half of a wavelength and a pixel collecting area in a range of 1 to 2 wavelengths of an operating range of wavelengths of the microbridge detector.

22. The microbridge detector of claim 12, further comprising a means for creating a thermal time constant of the microbridge detector which is substantially the same as that of a microbridge detector having an active area substantially the same size as the pixel collection of the microbridge detector.

23. A microbridge detector, comprising:

a semiconductor substrate;

a microbridge disposed above the semiconductor substrate, the microbridge including an active area that is patterned with alternating absorption regions and transmissive windows to create an active area that is smaller than a pixel collection area of the microbridge detector;

downwardly extending leg portions which are a continuation of the microbridge and which support the microbridge above the semiconductor substrate so that a thermal isolation gap exists between the microbridge and the semiconductor substrate; and

electrically conductive paths included within the downwardly extending leg portions connecting the active area to the semiconductor substrate.

24. A microbridge detector, comprising:

a semiconductor substrate;

a microbridge disposed above the semiconductor substrate, the microbridge including an active area that is substantially rectangular and located substantially at a center of the microbridge;

downwardly extending leg portions which are a continuation of the microbridge and which support the microbridge above the semiconductor substrate so that a thermal isolation gap exists between the microbridge and the semiconductor substrate; and

electrically conductive paths included within the downwardly extending leg portions including first and second electrically conductive paths connected to a first end and a second end of the active area and which are spirally wound around the active area, the first and second electrically conductive paths configured so as to act as antennas to absorb incident radiation and to couple the incident radiation to the active area so as to create a pixel collection area greater than the active area, the first and second electrically conductive paths coupling a signal indicating a change in temperature of the active area to the semiconductor substrate in response to the incident radiation.

36. The microbridge detector of one of claims 24 and 35, wherein the electrically conductive paths have a length such that a thermal time constant of the microbridoe detector is substantially the same as that of a microbridge detector having an active area substantially equal to the pixel correction area of the microbridge detector.

25. An imaging system, comprising:

an optical element that receives an electromagnetic signal, focusses the electromagnetic signal and outputs a focussed signal;

a focal plane array including a plurality of detector devices disposed in the array, wherein each detector device detects the focussed signal, converts the focussed signal into a sensed signal and outputs the sensed signal to provide a plurality of sensed signals at an output of the focal plane array, and wherein each detector device includes an active area that is smaller than a pixel collection area of the detector device;

a focal plane array processor that receives the plurality of sensed signals, processes the plurality of sensed signals to correct any gain and any offset errors between each of the plurality of sensed signals, and outputs a plurality of processed signals;

a display processor that receives the plurality of processed signals, converts the plurality of processed signals into a display signal suitable for output to a display, and that outputs the display signal; and

a display that receives the display signal and displays the display signal so as to display an image of a scene or object that emitted the electromagnetic signal.

26. The imagining system of claim 25, wherein the imagining system is a spectrometer.

27. The imaging system of claim 25, wherein the imaging system is a helmet-mounted imaging system.

28. The imaging system of claim 25, wherein the imaging system is a goggle-mounted imaging system.

29. The imaging system of claim 25, wherein the imaging system is a monocular system.

30. The imagining system of claim 25, wherein the imaging system is a binocular system.

31. The imaging system of claim 25, wherein the imaging system is a weapon sight.

32. The imaging system of claim 25, wherein the imagining system is a camcorder apparatus.

33. The imagining system of claim 25, wherein the imagining system is a microscope.

34. The imagining system of claim 25, wherein the imagining system is a radiometer.

35. A microbridge detector, comprising:

a semiconductor substrate;

a microbridge disposed above the semiconductor substrate, including an active area;

a concentrator, disposed between the microbridge and the semiconductor substrate, that reflects incident radiation not initially absorbed by the active area towards the active area to create a pixel collection area of the microbridge detector that is greater than the active area;

downwardly extending leg portions which are a continuation of the microbridge and which support the microbridge above the semiconductor substrate so that a thermal isolation gap exists between the microbridge and the semiconductor substrate; and

electrically conductive paths included within said downwardly extending leg portions connecting the active area to the semiconductor substrate.